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Infineon Technologies |
TRANS NPN 45V 0.5A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock3,888 |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 250mW | 170MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,848 |
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100mA | 25V | 500mV @ 5mA, 100mA | 15nA | 120 @ 2mA, 5V | 500mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,464 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 350mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 5A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
- Power - Max: 70W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock6,608 |
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5A | 400V | 1.5V @ 500mA, 2.5A | 10µA (ICBO) | 10 @ 300mA, 5V | 70W | 10MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS PNP 50V 0.15A TO-92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 250mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,272 |
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150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 1mA, 6V | 250mW | 180MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock600,000 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS PNP DARL 150V 15A TO218
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Power - Max: 150W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
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Package: TO-218-3 |
Stock33,576 |
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15A | 150V | 4V @ 150mA, 15A | 1mA | 400 @ 10A, 5V | 150W | 3MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-218-3 | SOT-93 |
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Panasonic Electronic Components |
TRANS NPN 50V 0.1A SSSMINI3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
- Power - Max: 100mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
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Package: SOT-723 |
Stock693,240 |
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100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 180 @ 2mA, 10V | 100mW | 100MHz | 125°C (TJ) | Surface Mount | SOT-723 | SSSMini3-F1 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.2A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,616 |
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200mA | 25V | 400mV @ 5mA, 50mA | 50nA (ICBO) | 120 @ 2mA, 1V | 625mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 50V 3A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 390MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock296,628 |
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3A | 50V | 520mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 100mA, 2V | 800mW | 390MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2-TP-FA |
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Nexperia USA Inc. |
TRANS PNP 50V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
- Power - Max: 250mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,744 |
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500mA | 50V | 600mV @ 30mA, 300mA | 10nA (ICBO) | 170 @ 150mA, 10V | 250mW | 140MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Nexperia USA Inc. |
IC TRANS PNP 600V 0.1A SC73
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 6mA, 30mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
- Power - Max: 650mW
- Frequency - Transition: 38MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock7,680 |
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100mA | 600V | 250mV @ 6mA, 30mA | 100nA | 70 @ 10mA, 10V | 650mW | 38MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Nexperia USA Inc. |
TRANS PNP 32V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,512 |
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100mA | 32V | 550mV @ 1.25mA, 50mA | 20nA (ICBO) | 380 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,936 |
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100mA | 50V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 20 @ 10mA, 5V | 300mW | 250MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Sanken |
TRANS NPN DARL 160V 15A TO-3P-5
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
- Power - Max: 160W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-5
- Supplier Device Package: TO-3P-5L
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Package: TO-3P-5 |
Stock3,888 |
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15A | 160V | 2V @ 10mA, 10A | 100µA (ICBO) | 5000 @ 10A, 4V | 160W | - | 150°C (TJ) | Through Hole | TO-3P-5 | TO-3P-5L |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock44,592 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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onsemi |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 55 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126ML
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Package: - |
Request a Quote |
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2 A | 55 V | 1.5V @ 4mA, 1A | 10µA (ICBO) | 1000 @ 1A, 5V | 1.5 W | 180MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126ML |
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Nexperia USA Inc. |
BC816-16/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Request a Quote |
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500 mA | 80 V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 300 mW | 100MHz | 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Microchip Technology |
TRANS NPN 100V 0.5A U4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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Package: - |
Request a Quote |
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500 mA | 100 V | 600mV @ 30mA, 300mA | 50nA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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Package: - |
Request a Quote |
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100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 330 mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 |
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Microchip Technology |
TRANS NPN 350V 1A UA
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
Request a Quote |
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1 A | 350 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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Panjit International Inc. |
TRANS PNP 65V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock8,970 |
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100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 330 mW | 200MHz | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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500 mA | 100 V | 600mV @ 30mA, 300mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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NTE Electronics, Inc |
TRANS PNP 60V 2A TO237
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
- Power - Max: 1 W
- Frequency - Transition: 500MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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Package: - |
Request a Quote |
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2 A | 60 V | 500mV @ 10mA, 250mA | 100nA (ICBO) | 80 @ 50mA, 1V | 1 W | 500MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-237AA | TO-237 |
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Nexperia USA Inc. |
BCP56T-Q/SOT223/SC-73
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 155MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 600 mW | 155MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Nexperia USA Inc. |
BCP53-16T-Q/SOT223/SC-73
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Stock3,000 |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 600 mW | 140MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Microchip Technology |
TRANS NPN 80V 3A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 5µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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3 A | 80 V | 500mV @ 200mA, 2A | 5µA | 40 @ 1A, 2V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR U-DFN2020
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
- Power - Max: 690 mW
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3 (Type B)
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Package: - |
Request a Quote |
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4 A | 60 V | 450mV @ 250mA, 5A | 100nA | 170 @ 500mA, 2V | 690 mW | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-UDFN Exposed Pad | U-DFN2020-3 (Type B) |