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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,928 |
|
2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Microsemi Corporation |
TRANS NPN DARL 100V 12A TO254
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Power - Max: 100W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
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Package: TO-254-3, TO-254AA (Straight Leads) |
Stock3,760 |
|
12A | 100V | 3V @ 120mA, 12A | 1mA | 1000 @ 6A, 3V | 100W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | TO-254AA |
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Micro Commercial Co |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,016 |
|
800mA | 45V | 700mV @ 50mA, 500mA | 200nA | 100 @ 100mA, 1V | 625mW | 260MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Rohm Semiconductor |
TRANS PNP 20V 2A SPT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 400mW
- Frequency - Transition: 240MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
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Package: SC-72 Formed Leads |
Stock68,760 |
|
2A | 20V | 500mV @ 100mA, 2A | 100nA (ICBO) | 120 @ 100mA, 2V | 400mW | 240MHz | 150°C (TJ) | Through Hole | SC-72 Formed Leads | SPT |
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Panasonic Electronic Components |
TRANS PNP 80V 7A TO-220F
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-A1
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Package: TO-220-3 Full Pack |
Stock5,760 |
|
7A | 80V | 500mV @ 250mA, 5A | 10µA (ICBO) | 130 @ 3A, 2V | 2W | 30MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-A1 |
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Panasonic Electronic Components |
TRANS NPN 100V 0.02A SSS MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
- Power - Max: 100mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock4,816 |
|
20mA | 100V | 200mV @ 1mA, 10mA | 1µA | 400 @ 2mA, 10V | 100mW | 200MHz | 125°C (TJ) | Surface Mount | SOT-723 | SSSMini3-F1 |
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ON Semiconductor |
TRANS PNP 40V 1A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 Long Body |
Stock269,760 |
|
1A | 40V | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92 |
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Microsemi Corporation |
TRANS PNP 60V 0.003A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock6,896 |
|
3mA | 60V | 1.5V @ 250mA, 2.5A | 100µA (ICBO) | 30 @ 1.5A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Rohm Semiconductor |
TRANS PNP MPT3
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock3,776 |
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- | - | - | - | - | - | - | - | Surface Mount | TO-243AA | MPT3 |
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ON Semiconductor |
TRANS NPN 160V 1.5A TP-FA
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,424 |
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1.5A | 160V | 450mV @ 50mA, 500mA | 1µA (ICBO) | 200 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2-TP-FA |
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Diodes Incorporated |
TRANS NPN 300V 0.2A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock184,800 |
|
200mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 200mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Fairchild/ON Semiconductor |
TRANS PNP 40V 3A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
|
Package: TO-220-3 |
Stock19,704 |
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3A | 40V | 1.2V @ 375mA, 3A | 300µA | 10 @ 3A, 4V | 2W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
TRANS NPN DARL 100V 8A TO-220
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock199,716 |
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8A | 100V | 4V @ 30mA, 6A | 500µA | 1000 @ 4A, 4V | 2W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Panasonic Electronic Components |
TRANS PNP 50V 0.5A SMINI3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2-B
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Package: SC-85 |
Stock36,000 |
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500mA | 50V | 600mV @ 30mA, 300mA | 100nA (ICBO) | 120 @ 150mA, 10V | 150mW | 130MHz | 150°C (TJ) | Surface Mount | SC-85 | SMini3-F2-B |
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Diodes Incorporated |
TRANS PNP 400V 0.5A SOT89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 200mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 1.5W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: TO-243AA |
Stock13,128 |
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500mA | 400V | 400mV @ 40mA, 200mA | 100nA | 140 @ 100mA, 5V | 1.5W | 75MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Infineon Technologies |
TRANS NPN 40V 0.6A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 330mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock260,352 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 330mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Sanken |
TRANS PNP DARL 150V 15A TO-3P
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
- Power - Max: 130W
- Frequency - Transition: 45MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock704,100 |
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15A | 150V | 2.5V @ 10mA, 10A | 100µA (ICBO) | 5000 @ 10A, 4V | 130W | 45MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 750mW
- Frequency - Transition: 160MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock60,000 |
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1A | 60V | 300mV @ 50mA, 1A | 100nA (ICBO) | 200 @ 100mA, 2V | 750mW | 160MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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STMicroelectronics |
TRANS NPN 400V 8A D2PAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Power - Max: 80W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock40,896 |
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8A | 400V | 2V @ 2A, 8A | 100µA | 8 @ 5A, 5V | 80W | - | 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Diodes Incorporated |
TRANS NPN 100V 3A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock876,360 |
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3A | 100V | 250mV @ 300mA, 3A | 50nA (ICBO) | 100 @ 10mA, 2V | 1.25W | 160MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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NTE Electronics, Inc |
TRANS PNP 80V 1A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: - |
Request a Quote |
|
1 A | 80 V | 500mV @ 50mA, 500mA | 50nA (ICBO) | 100 @ 100mA, 5V | 1.25 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Nexperia USA Inc. |
TRANS PNP SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: -
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
- | - | 600mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | - | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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Microsemi Corporation |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
200 mA | 600 V | 1.5V @ 5mA, 25mA | 10nA (ICBO) | 30 @ 25mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 10nA | 100 @ 150mA, 10V | 800 mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Renesas Electronics Corporation |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
- Power - Max: 150 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-MPAK
|
Package: - |
Request a Quote |
|
100 mA | 30 V | 200mV @ 10mA, 1mA | 500nA (ICBO) | 160 @ 2mA, 12V | 150 mW | - | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-MPAK |
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Microchip Technology |
POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
TRANSISTOR POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |