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Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock7,168 |
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5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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Bourns Inc. |
TRANS NPN DARL 120V 4A
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock2,560 |
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4A | 120V | 4V @ 40mA, 4A | 500µA | 750 @ 1.5A, 3V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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ON Semiconductor |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 320MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,040 |
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100mA | 45V | 650mV @ 5mA, 100mA | 100nA | 180 @ 2mA, 5V | 625mW | 320MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN 45V 0.1A SOT416
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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Package: SC-75, SOT-416 |
Stock3,856 |
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100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 150mW | 100MHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 0.05A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,952 |
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100mA | 60V | 350mV @ 100µA, 1mA | 10nA (ICBO) | 100 @ 10µA, 5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,248 |
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500mA | 45V | 400mV @ 20mA, 200mA | 50nA | 100 @ 150mA, 5V | 625mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 45V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock767,640 |
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200mA | 45V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 500 @ 10mA, 5V | 625mW | 160MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 300V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,520 |
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500mA | 300V | 2V @ 2mA, 20mA | 100nA (ICBO) | 40 @ 10mA, 10V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 100V 2A I-PAK
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 1.75W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-Pak
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,032 |
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2A | 100V | 3V @ 40mA, 4A | 20µA | 1000 @ 2A, 3V | 1.75W | 25MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-Pak |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,424 |
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200mA | 40V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 45V 0.1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock120,000 |
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100mA | 45V | 250mV @ 500µA, 10mA | 15nA | 200 @ 2mA, 5V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 260V 15A TO-247
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 260V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Package: TO-247-3 |
Stock4,720 |
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15A | 260V | 1V @ 500mA, 5A | 10µA (ICBO) | 75 @ 3A, 5V | 150W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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Panasonic Electronic Components |
TRANS NPN 20V 1A MINI PWR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MiniP3-F1
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Package: TO-243AA |
Stock6,848 |
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1A | 20V | 500mV @ 50mA, 1A | 1µA (ICBO) | 130 @ 500mA, 2V | 1W | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | MiniP3-F1 |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 1A DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
- Power - Max: 1.56W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock45,204 |
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1A | 400V | 1V @ 200mA, 1A | 200µA | 30 @ 300mA, 10V | 1.56W | 10MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) |
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Nexperia USA Inc. |
TRANS PNP 300V 0.05A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Power - Max: 250mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,216 |
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50mA | 300V | 800mV @ 5mA, 30mA | 10nA (ICBO) | 50 @ 25mA, 20V | 250mW | 60MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Diodes Incorporated |
TRANS NPN 100V 1A SOT363
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock25,788 |
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1A | 100V | 200mV @ 100mA, 1A | 100nA (ICBO) | 100 @ 500mA, 10V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Rohm Semiconductor |
TRANS NPN 32V 0.5A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 3V
- Power - Max: 200mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock2,089,416 |
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500mA | 32V | 600mV @ 50mA, 500mA | 1µA (ICBO) | 180 @ 10mA, 3V | 200mW | 250MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
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Nexperia USA Inc. |
BC51PA-Q/SOT1061/HUSON3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 420 mW
- Frequency - Transition: 145MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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Package: - |
Request a Quote |
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1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 420 mW | 145MHz | 150°C (TJ) | Surface Mount | 3-PowerUDFN | 3-HUSON (2x2) |
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Microchip Technology |
POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
TRANS PNP 45V 0.5A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Request a Quote |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 200 mW | 80MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Diotec Semiconductor |
BJT TO92BK 65V PNP 0.5W 150C
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 500 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Central Semiconductor Corp |
TRANS PNP 12V 0.08A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 80 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
- Power - Max: 350 mW
- Frequency - Transition: 500MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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80 mA | 12 V | 600mV @ 5mA, 50mA | 10nA | 30 @ 10mA, 300mV | 350 mW | 500MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
NPN POWER SILICON TRANSISTORS
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
PMBT4401-Q/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: - |
Request a Quote |
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600 mA | 40 V | 750mV @ 50mA, 500mA | 50nA (ICBO) | 100 @ 150mA, 1V | 250 mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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NTE Electronics, Inc |
TRANS NPN DARL 500V 20A TO3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 20A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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20 A | 500 V | 3.5V @ 2A, 20A | 250µA | 40 @ 5A, 5V | 175 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
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Package: - |
Request a Quote |
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5 A | 80 V | - | - | - | 30 W | - | - | Stud Mount | TO-111-4, Stud | TO-111 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SSM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 120 mW
- Frequency - Transition: 80MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Request a Quote |
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150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 120 mW | 80MHz | - | Surface Mount | SC-75, SOT-416 | SSM |
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Diodes Incorporated |
TRANS PNP 30V 5.5A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 175mV @ 500mA, 5.5A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: - |
Stock6,000 |
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5.5 A | 30 V | 175mV @ 500mA, 5.5A | 20nA | 100 @ 1A, 1V | 1.5 W | 110MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |