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Infineon Technologies |
CHIP T0110L-3 E6762 DIE
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,624 |
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NXP |
TRANS PNP 65V 0.1A SC-75
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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Package: SC-75, SOT-416 |
Stock3,024 |
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100mA | 65V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 150mW | 100MHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75 |
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ON Semiconductor |
TRANS NPN 45V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 210MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock19,560 |
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800mA | 45V | 700mV @ 50mA, 500mA | 100nA | 160 @ 100mA, 1V | 625mW | 210MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS NPN 60V 5A DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 15W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock180,132 |
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5A | 60V | 600mV @ 200mA, 5A | 100nA (ICBO) | 200 @ 100mA, 2V | 15W | 150MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 2A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock96,000 |
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2A | 25V | 600mV @ 75mA, 1.5A | 100nA (ICBO) | 200 @ 100mA, 2V | 1.3W | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 450mW
- Frequency - Transition: 270MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,760 |
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100mA | 45V | 300mV @ 5mA, 100mA | 50nA (ICBO) | 100 @ 1mA, 5V | 450mW | 270MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Diodes Incorporated |
TRANS NPN 60V 1A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock6,976 |
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1A | 60V | 500mV @ 100mA, 1A | 100nA | - | 500mW | - | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Infineon Technologies |
TRANSISTOR AF SOT89-4
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock4,416 |
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500mA | 30V | 1V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 1W | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Microsemi Corporation |
TRANS PNP 175V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 175V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
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Package: 3-SMD, No Lead |
Stock2,544 |
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1A | 175V | 600mV @ 5mA, 50mA | 10µA | 50 @ 50mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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ON Semiconductor |
TRANS NPN 32V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,216 |
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100mA | 32V | 250mV @ 500µA, 10mA | 100nA (ICBO) | 420 @ 2mA, 5V | 300mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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TSC America Inc. |
TRANSISTOR, NPN, 50V, 0.15A, 200
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,784 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 500mW | 80MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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TSC America Inc. |
TRANSISTOR, NPN, 65V, 0.1A, 200A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,224 |
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100mA | 65V | - | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microsemi Corporation |
TRANS NPN 80V 10A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
- Power - Max: 5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
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Package: TO-204AA, TO-3 |
Stock7,512 |
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10A | 80V | 2.5V @ 2A, 10A | 1mA | 30 @ 3A, 2V | 5W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
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STMicroelectronics |
TRANS PNP 250V 17A TO-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 17A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 200W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock10,176 |
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17A | 250V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 200W | 25MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 8A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
- Power - Max: 80W
- Frequency - Transition: 4MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock314,172 |
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8A | 400V | 3V @ 2A, 8A | - | 15 @ 2A, 5V | 80W | 4MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
TRANS NPN 60V 2A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 2W
- Frequency - Transition: 210MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock1,881,360 |
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2A | 60V | 350mV @ 50mA, 1A | 100nA (ICBO) | 120 @ 500mA, 2V | 2W | 210MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Rohm Semiconductor |
NPN 120V 1.5A MEDIUM POWER TRANS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock23,736 |
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1.5A | 120V | 300mV @ 80mA, 800mA | 1µA (ICBO) | 120 @ 200mA, 5V | 500mW | 200MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Panasonic Electronic Components |
TRANS PNP 20V 0.03A MINI-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,216 |
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30mA | 20V | 100mV @ 1mA, 10mA | 100µA | 110 @ 1mA, 10V | 200mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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Nexperia USA Inc. |
TRANS NPN DARL 45V 1A SOT89
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.3W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock22,338 |
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1A | 45V | 1.3V @ 500µA, 500mA | 50nA | 2000 @ 500mA, 10V | 1.3W | 200MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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ON Semiconductor |
TRANS NPN DARL 100V 2A TO225AA
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 6MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock243,156 |
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2A | 100V | 3V @ 1.2mA, 120mA | 1mA | 1500 @ 120mA, 10V | 1.5W | 6MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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ON Semiconductor |
TRANS PNP 30V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock900,840 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Micro Commercial Co |
TRANS NPN 45V 0.1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 400 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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100 mA | 45 V | 300mV @ 5mA, 100mA | 100nA | 100 @ 1mA, 5V | 400 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
TRANS NPN 40V 1.5A TO46
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46
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Package: - |
Request a Quote |
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1.5 A | 40 V | 900mV @ 100mA, 1A | 200nA | 40 @ 500mA, 1V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 |
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onsemi |
NPN EPITAXIAL PLANAR SILICON TRA
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
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Package: - |
Request a Quote |
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700 mA | 20 V | 300mV @ 50mA, 500mA | 1µA (ICBO) | 160 @ 50mA, 2V | 600 mW | 250MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 3-NP |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 200 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-211MB, TO-63-4, Stud
- Supplier Device Package: TO-63
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Package: - |
Request a Quote |
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30 A | 300 V | - | - | - | 200 W | - | -65°C ~ 200°C (TJ) | Stud Mount | TO-211MB, TO-63-4, Stud | TO-63 |
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Micro Commercial Co |
TRANS NPN 30V 0.6A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
- Power - Max: 625 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
|
600 mA | 30 V | 1V @ 50mA, 500mA | 100nA | 100 @ 1mA, 10V | 625 mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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Nexperia USA Inc. |
PMBT2907A-Q/SOT23/TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock25,686 |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 250 mW | - | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |