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Microsemi Corporation |
TRANS PNP 200V 1A TO-5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock3,136 |
|
1A | 200V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microsemi Corporation |
TRANS PNP 20V 0.1A TO-46
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46
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Package: TO-206AB, TO-46-3 Metal Can |
Stock6,192 |
|
100mA | 20V | - | 10µA (ICBO) | 70 @ 1mA, 500mV | 400mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 |
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Diodes Incorporated |
TRANS PNP 40V 3A 3-MLP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
- Power - Max: 3W
- Frequency - Transition: 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerSMD, Flat Leads
- Supplier Device Package: 3-MLP/DFN (2x2)
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Package: 3-PowerSMD, Flat Leads |
Stock118,128 |
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3A | 40V | 370mV @ 250mA, 2.5A | 25nA | 60 @ 1.5A, 2V | 3W | 190MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerSMD, Flat Leads | 3-MLP/DFN (2x2) |
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Rohm Semiconductor |
TRANS PNP 80V 0.7A ATV
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock240,000 |
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700mA | 80V | 400mV @ 50mA, 500mA | 500nA (ICBO) | 180 @ 100mA, 3V | 1W | 100MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 3A TO-126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
- Power - Max: 1.5W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock5,040 |
|
3A | 60V | 1.7V @ 600mA, 3A | 100nA (ICBO) | 50 @ 100mA, 1V | 1.5W | 50MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 30V 0.5A TO-92
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,728 |
|
500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 625mW | 125MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS NPN DARL 400V 15A TO-3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Power - Max: 175W
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock11,784 |
|
15A | 400V | 1.8V @ 250mA, 10A | 100µA | 300 @ 5A, 10V | 175W | - | 200°C (TJ) | Chassis Mount | TO-204AA, TO-3 | TO-3 |
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Diodes Incorporated |
TRANS PNP 300V 0.5A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock179,124 |
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500mA | 300V | 500mV @ 2mA, 20mA | 250nA (ICBO) | 25 @ 30mA, 10V | 300mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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ON Semiconductor |
TRANS PNP 25V 5A DPAK-4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
- Power - Max: 1.4W
- Frequency - Transition: 65MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,600 |
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5A | 25V | 1.8V @ 1A, 5A | 100nA (ICBO) | 45 @ 2A, 1V | 1.4W | 65MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
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Diodes Incorporated |
TRANS NPN 60V 6A SOT-223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock35,580 |
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6A | 60V | 375mV @ 300mA, 6A | 50nA (ICBO) | 100 @ 2A, 1V | 1W | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Nexperia USA Inc. |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 145MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock5,792 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 1W | 145MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Nexperia USA Inc. |
BCW68FSOT23TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,056 |
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800mA | 45V | 450mV @ 50mA, 500mA | 5µA (ICBO) | 100 @ 100mA, 1V | 250mW | 80MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Microsemi Corporation |
TRANS NPN 70V 15A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 70V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3 (TO-204AA)
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Package: TO-204AA, TO-3 |
Stock5,792 |
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15A | 70V | 2V @ 3.3A, 10A | 1mA | 20 @ 4A, 4V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 (TO-204AA) |
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Diodes Incorporated |
TRANS PNP 60V 1A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 2W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock18,312 |
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1A | 60V | 600mV @ 100mA, 1A | 100nA | 100 @ 500mA, 5V | 2W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Microsemi Corporation |
TRANS PNP 60V 0.6A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock18,096 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Nexperia USA Inc. |
TRANS NPN 80V 1A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 155MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Stock2,718 |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 500 mW | 155MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Microchip Technology |
TRANS NPN 50V 1UA U4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
3 A | 50 V | 1.5V @ 250mA, 2.5A | 1µA | 35 @ 500mA, 1V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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onsemi |
BIP PNP 1.5A 50V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 64 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
8 A | 80 V | 2V @ 80mA, 8A | 500µA | 750 @ 4A, 3V | 64 W | - | -65°C ~ 175°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A VESM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: - |
Stock24,030 |
|
150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 150 mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-723 | VESM |
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Microchip Technology |
TRANS PNP 60V 0.03A TO46
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46 (TO-206AB)
|
Package: - |
Request a Quote |
|
30 mA | 60 V | 300mV @ 500µA, 10mA | 10nA | 60 @ 500µA, 5V | 400 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 (TO-206AB) |
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Comchip Technology |
TRANS PNP 65V 100A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 150 mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 15 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
5 A | 80 V | 1.5V @ 500µA, 2mA | - | - | 15 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
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Micro Commercial Co |
TRANS PNP 50V 0.15A TO92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
|
Package: - |
Request a Quote |
|
150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 200 mW | 80MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Micro Commercial Co |
TRANS NPN 25V 0.5A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: - |
Stock6,909 |
|
500 mA | 25 V | 600mV @ 50mA, 500mA | 100nA | 200 @ 50mA, 1V | 300 mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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|
onsemi |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92 (TO-226)
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500 mA | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 625 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 (TO-226) |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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Package: - |
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500 mA | 100 V | 600mV @ 30mA, 300mA | 50nA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |