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Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V SC71
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock7,712 |
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800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Through Hole | SC-71 | MSTM |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,320 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Microsemi Corporation |
TRANS NPN 140V 3A TO-66
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
- Power - Max: 3W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: TO-213AA, TO-66-2 |
Stock5,600 |
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3A | 140V | 1V @ 50mA, 500mA | - | 25 @ 500mA, 4V | 3W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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NXP |
TRANS NPN 45V 0.1A SOT416
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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Package: SC-75, SOT-416 |
Stock3,856 |
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100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 150mW | 100MHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75 |
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STMicroelectronics |
TRANS NPN 450V 80A ISOTOP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 500MV @ 12A, 60A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 60A, 5V
- Power - Max: 270W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP
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Package: ISOTOP |
Stock78,384 |
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80A | 450V | 500MV @ 12A, 60A | 200µA | 15 @ 60A, 5V | 270W | - | 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.1A TO-9
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,424 |
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100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 40 @ 10µA, 5V | 350mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN DARL 30V 0.5A SOT54
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,624 |
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500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 500mW | 125MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 400V 0.3A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,072 |
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300mA | 400V | 750mV @ 5mA, 50mA | 500nA | 50 @ 10mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 20V 5A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock6,320 |
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5A | 20V | 1V @ 100mA, 4A | 500nA (ICBO) | 180 @ 500mA, 2V | 500mW | - | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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ON Semiconductor |
TRANS NPN 450V 2A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
- Power - Max: 50W
- Frequency - Transition: 13MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock6,624 |
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2A | 450V | 500mV @ 200mA, 1A | 100µA | 14 @ 200mA, 5V | 50W | 13MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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STMicroelectronics |
TRANS PNP 40V 0.6A TO-18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.8W
- Frequency - Transition: 200MHz
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock6,899,172 |
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600mA | 40V | 1.6V @ 50mA, 500mA | 20nA (ICBO) | 100 @ 150mA, 10V | 1.8W | 200MHz | 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Panasonic Electronic Components |
TRANS NPN 40V 1.5A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
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Package: TO-225AA, TO-126-3 |
Stock2,416 |
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1.5A | 40V | 1V @ 200mA, 2A | 100µA | 80 @ 1A, 5V | 1.2W | 150MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126B-A1 |
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NXP |
TRANS NPN 40V 1A 6TSOP
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 600mW
- Frequency - Transition: 150MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock4,752 |
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1A | 40V | 210mV @ 100mA, 1A | 100nA | 300 @ 500mA, 5V | 600mW | 150MHz | 125°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Microsemi Corporation |
TRANS PNP 80V 7A TO-66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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Package: TO-213AA, TO-66-2 |
Stock6,736 |
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7A | 80V | - | - | 30 @ 7A, 80V | 40W | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 |
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Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 600mW
- Frequency - Transition: 150MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock12,072 |
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200mA | 25V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 600mW | 150MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 250MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock788,400 |
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200mA | 30V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 50 @ 2mA, 10V | 1.5W | 250MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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ON Semiconductor |
TRANS PNP 60V 10A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 2W
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock12,144 |
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10A | 60V | 1V @ 400mA, 8A | 10µA | 40 @ 4A, 1V | 2W | 40MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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STMicroelectronics |
TRANS NPN 450V 4A TO-220FP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
- Power - Max: 30W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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Package: TO-220-3 Full Pack |
Stock85,800 |
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4A | 450V | 1.5V @ 400mA, 2A | 100µA | 12 @ 2A, 5V | 30W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,216 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA | 160 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NTE Electronics, Inc |
TRANS NPN 800V 8A TO3PML
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
- Power - Max: 70 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PML
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Package: - |
Request a Quote |
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8 A | 800 V | 5V @ 1.2A, 6A | 1mA | 8 @ 1A, 5V | 70 W | - | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PML |
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Microchip Technology |
TRANS NPN 80V 0.001A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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1 mA | 80 V | 1.5V @ 500mA, 5A | 1mA | 30 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Diodes Incorporated |
TRANS NPN SW 40V 600MA SOT-223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 2 W
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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Package: - |
Request a Quote |
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600 mA | 40 V | 1V @ 50mA, 500mA | - | 100 @ 150mA, 10V | 2 W | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Rohm Semiconductor |
TRANS PNP 60V 0.05A SOT223-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
|
Package: - |
Stock24,687 |
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50 mA | 60 V | 300mV @ 600mA, 6A | 100nA (ICBO) | 150 @ 500mA, 2V | 1.2 W | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Micro Commercial Co |
TRANS NPN 30V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 800 mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
|
1 A | 30 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 100mA, 1V | 800 mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
TRANS PNP 200V 1A TO5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: - |
Request a Quote |
|
1 A | 200 V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microchip Technology |
TRANSISTOR POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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Central Semiconductor Corp |
TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 600 mW
- Frequency - Transition: 360MHz
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
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600 mA | 50 V | 400mV @ 15mA, 150mA | 500nA (ICBO) | 40 @ 150mA, 10V | 600 mW | 360MHz | 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
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800 mA | 25 V | 700mV @ 50mA, 500mA | 100nA | 160 @ 100mA, 1V | 625 mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |