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Microsemi Corporation |
TRANS NPN 90V 30A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 90V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3 (TO-204AA)
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Package: TO-204AA, TO-3 |
Stock3,376 |
|
30A | 90V | 5V @ 6A, 30A | 10mA | 20 @ 15A, 2V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 (TO-204AA) |
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Bourns Inc. |
TRANS PNP 100V 25A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Power - Max: 3.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
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Package: TO-218-3 |
Stock5,536 |
|
25A | 100V | 4V @ 5A, 25A | 1mA | 10 @ 15A, 4V | 3.5W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-218-3 | SOT-93 |
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Fairchild/ON Semiconductor |
TRANS NPN DARL 30V 1.2A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,616 |
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1.2A | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 625mW | 125MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 160V 0.6A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,688 |
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600mA | 160V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.3A TO-92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
- Power - Max: 300mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body |
Stock7,040 |
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300mA | 25V | 600mV @ 30mA, 300mA | 100mA (ICBO) | 120 @ 50mA, 1V | 300mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Fairchild/ON Semiconductor |
TRANS NPN DARL 45V 1.5A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 4mA, 1A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,544 |
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1.5A | 45V | 1.6V @ 4mA, 1A | 50nA (ICBO) | 2000 @ 500mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 400V 8A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
- Power - Max: 80W
- Frequency - Transition: 14MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock13,608 |
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8A | 400V | 3V @ 2A, 8A | 100µA | 5 @ 5A, 5V | 80W | 14MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Diodes Incorporated |
TRANS NPN 40V 0.6A SMD SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock49,380 |
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600mA | 40V | 750mV @ 50mA, 500mA | - | 100 @ 150mA, 1V | 300mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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NXP |
TRANS NPN DARL 30V 0.5A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,712 |
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500mA | 30V | 1V @ 100µA, 100mA | 100nA (ICBO) | 30000 @ 20mA, 2V | 625mW | 220MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Microsemi Corporation |
TRANS PNP 80V 5A TO59
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
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Package: TO-210AA, TO-59-4, Stud |
Stock2,848 |
|
5A | 80V | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
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ON Semiconductor |
TRANS PNP 30V 1.5A CPH3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 450MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
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Package: SC-96 |
Stock3,440 |
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1.5A | 30V | 375mV @ 15mA, 750mA | 100nA (ICBO) | 200 @ 100mA, 2V | 900mW | 450MHz | 150°C (TJ) | Surface Mount | SC-96 | 3-CPH |
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Nexperia USA Inc. |
TRANS PNP 60V 0.6A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.15W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock4,048 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 1.15W | 200MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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ON Semiconductor |
TRANS NPN 450V 5A TO220FP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
- Power - Max: 35W
- Frequency - Transition: 13MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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Package: TO-220-3 Full Pack |
Stock23,004 |
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5A | 450V | 750mV @ 500mA, 2.5A | 100µA | 14 @ 300mA, 5V | 35W | 13MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 1A SUPERSOT-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SuperSOT-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock33,528 |
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1A | 30V | 750mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 500mA, 2V | 500mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 |
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Nexperia USA Inc. |
TRANS PNP 20V 3A SOT89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock24,000 |
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3A | 20V | 500mV @ 100mA, 2A | 100nA (ICBO) | 180 @ 100mA, 2V | 2W | 125MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Panasonic Electronic Components |
TRANS PNP 20V 0.5A MINI-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,336 |
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500mA | 20V | 400mV @ 50mA, 500mA | 1µA | 130 @ 500mA, 2V | 200mW | 150MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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Rohm Semiconductor |
TRANS NPN 20V 0.05A SOT-416
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 1.5GHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: SC-75, SOT-416 |
Stock285,780 |
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50mA | 20V | 500mV @ 4mA, 20mA | 500nA (ICBO) | 82 @ 10mA, 10V | 150mW | 1.5GHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | EMT3 |
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Panasonic Electronic Components |
TRANS NPN 20V 0.5A MT-1
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
- Power - Max: 600mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: MT-1-A1
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Package: 3-SIP |
Stock20,676 |
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500mA | 20V | 400mV @ 20mA, 500mA | 100nA (ICBO) | 400 @ 500mA, 2V | 600mW | 200MHz | 150°C (TJ) | Through Hole | 3-SIP | MT-1-A1 |
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Diodes Incorporated |
TRANS PNP 20V 3.5A 3-DFN
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
- Power - Max: 3W
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020B-3
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Package: 3-UDFN |
Stock35,736 |
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3.5A | 20V | 300mV @ 350mA, 3.5A | 25nA | 150 @ 2A, 2V | 3W | 180MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-UDFN | DFN2020B-3 |
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STMicroelectronics |
TRANS NPN 80V 1.5A SOT32
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
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Package: TO-225AA, TO-126-3 |
Stock133,284 |
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1.5A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1.25W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32-3 |
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EVVO |
TRANS NPN 50V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock8,904 |
|
100 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 90 @ 1mA, 6V | 200 mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
TRANS NPN 50V 0.8A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 10nA | 100 @ 150mA, 10V | 800 mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
TRANS NPN 45V 0.01A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
10 mA | 45 V | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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|
onsemi |
TRANS PWR NPN 5A 25V DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
- Power - Max: 12.5 W
- Frequency - Transition: 65MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
|
Package: - |
Request a Quote |
|
5 A | 25 V | 300mV @ 50mA, 500mA | - | 45 @ 2A, 1V | 12.5 W | 65MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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Rohm Semiconductor |
TRANS PNP 30V 0.1A SST3
- Transistor Type: -
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
|
Package: - |
Stock1,188 |
|
100 mA | 30 V | 650mV @ 5mA, 100mA | 100nA (ICBO) | 210 @ 2mA, 5V | 200 mW | - | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
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|
Microchip Technology |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: - |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Toshiba Semiconductor and Storage |
TRANS NPN 80V 5A PW-MOLD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD
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Package: - |
Stock3,054 |
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5 A | 80 V | 400mV @ 150mA, 3A | 1µA (ICBO) | 120 @ 1A, 1V | 1 W | 120MHz | 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | PW-MOLD |
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Rohm Semiconductor |
TRANS NPN 120V 0.7A MPT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: - |
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700 mA | 120 V | 300mV @ 50mA, 500mA | 1µA (ICBO) | 120 @ 100mA, 5V | 500 mW | 220MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |