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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock5,056 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 0.05A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,592 |
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100mA | 60V | 350mV @ 100µA, 1mA | 10nA (ICBO) | 100 @ 10µA, 5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 40V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock553,200 |
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100mA | 40V | 250mV @ 1mA, 10mA | 100nA (ICBO) | 40 @ 5mA, 10V | 625mW | 125MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,176 |
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500mA | 30V | 1V @ 5mA, 100mA | 100nA (ICBO) | 100 @ 50mA, 5V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,376 |
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100mA | 45V | 500mV @ 5mA, 100mA | 15nA | 180 @ 2mA, 5V | 500mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 200V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock15,564 |
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500mA | 200V | 400mV @ 2mA, 20mA | 250nA (ICBO) | 30 @ 30mA, 10V | 625mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Microsemi Corporation |
TRANS PNP DARL 100V 20A TO-3
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
- Power - Max: 175W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock4,112 |
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20A | 100V | 3V @ 200mA, 20A | 1mA | 1250 @ 10A, 3V | 175W | - | -65°C ~ 175°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 4A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
- Current - Collector Cutoff (Max): 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 70W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock156,156 |
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4A | 400V | 1.5V @ 500mA, 2.5A | 250mA | 8 @ 2A, 5V | 70W | - | - | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
TRANS PNP 20V 1.5A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.4W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock2,000 |
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1.5A | 20V | 450mV @ 150mA, 1.5A | 100nA (ICBO) | 200 @ 100mA, 2V | 1.4W | - | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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ON Semiconductor |
TRANS PNP 120V 15A TO3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
- Power - Max: 115W
- Frequency - Transition: 18MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock13,272 |
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15A | 120V | 5V @ 7A, 15A | 100µA | 10 @ 4A, 2V | 115W | 18MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Central Semiconductor Corp |
TRANS NPN 40V 0.6A SOT523
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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Package: SOT-523 |
Stock4,480 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 250mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 3A SSOT-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SuperSOT-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock34,800 |
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3A | 25V | 600mV @ 300mA, 3A | 100nA (ICBO) | 100 @ 1A, 2V | 500mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 |
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Central Semiconductor Corp |
TRANS PNP 50V 0.1A SOT523
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 225mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 390 @ 100µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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Package: SOT-523 |
Stock28,908 |
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100mA | 50V | 225mV @ 10mA, 100mA | 50nA (ICBO) | 390 @ 100µA, 5V | 350mW | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
TRANS NPN 45V 0.2A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 700MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock21,696 |
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200mA | 45V | 600mV @ 5mA, 100mA | 100nA | 500 @ 100µA, 5V | 350mW | 700MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Diodes Incorporated |
TRANS PNP 60V 1A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Power - Max: 725 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock8,847 |
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1 A | 60 V | 340mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 1mA, 5V | 725 mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Nexperia USA Inc. |
PBSS4360X/SOT89/MPT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
- Power - Max: 1.35 W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Stock11,877 |
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3 A | 60 V | 400mV @ 300mA, 3A | 100nA | 200 @ 1A, 5V | 1.35 W | 75MHz | -55°C ~ 150°C (TA) | Surface Mount | TO-243AA | SOT-89 |
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Nexperia USA Inc. |
TRANS NPN 65V 0.1A TO236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock18,828 |
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100 mA | 65 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250 mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Microchip Technology |
TRANS NPN 80V 3A U4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 300nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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Package: - |
Request a Quote |
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3 A | 80 V | 500mV @ 200mA, 2A | 300nA | 40 @ 1A, 2V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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Diodes Incorporated |
TRANS PNP 40V 3A SOT223-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 1V
- Power - Max: 1.2 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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Package: - |
Request a Quote |
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3 A | 40 V | 500mV @ 300mA, 3A | 100nA (ICBO) | 220 @ 500mA, 1V | 1.2 W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Micro Commercial Co |
TRANS PNP 160V 1A TO92MOD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 15MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92MOD
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Package: - |
Request a Quote |
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1 A | 160 V | 1.5V @ 50mA, 500mA | 10µA | 60 @ 200mA, 5V | 900 mW | 15MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92MOD |
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Micro Commercial Co |
TRANS NPN 65V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: -
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Stock2,244 |
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100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | - | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Renesas Electronics Corporation |
HIGH SPEED PNP TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 1.8GHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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Package: - |
Request a Quote |
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50 mA | 15 V | 200mV @ 1mA, 10mA | 100nA (ICBO) | 50 @ 10mA, 1V | 200 mW | 1.8GHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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Microchip Technology |
TRANS NPN 50V 0.8A TO18
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Micro Commercial Co |
TRANS NPN 160V 1A TO92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 20MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92MOD
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Package: - |
Request a Quote |
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1 A | 160 V | 1V @ 50mA, 500mA | 10µA | 160 @ 200mA, 5V | 900 mW | 20MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92MOD |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 7 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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Package: - |
Request a Quote |
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2 A | 40 V | - | - | - | 7 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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onsemi |
TRANS NPN 300V 0.5A TO237
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 2 W
- Frequency - Transition: 30MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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Package: - |
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500 mA | 300 V | - | - | - | 2 W | 30MHz | - | Through Hole | TO-237AA | TO-237 |
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Microchip Technology |
TRANS PNP 175V 1A TO5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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Package: - |
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1 A | 175 V | 600mV @ 5mA, 50mA | 10µA (ICBO) | 100 @ 10mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 200 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
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Package: - |
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16 A | 140 V | - | - | - | 200 W | - | - | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |