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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V SC71
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock4,992 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | SC-71 | MSTM |
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NXP |
MOSFET N-CH LFPAK
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,328 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,240 |
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500mA | 45V | 400mV @ 20mA, 200mA | 50nA | 300 @ 10mA, 1V | 625mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 150V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 400MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,032 |
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600mA | 150V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 625mW | 400MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 8A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 2V
- Power - Max: 50W
- Frequency - Transition: 12MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock2,960 |
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8A | 45V | 800mV @ 600mA, 6A | 100µA | 30 @ 2A, 2V | 50W | 12MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Fairchild/ON Semiconductor |
TRANS NPN 65V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,368 |
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100mA | 65V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 80V 1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,144 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1W | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 310mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock180,948 |
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100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 310mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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ON Semiconductor |
TRANS NPN 260V 15A TO-247
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 260V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Package: TO-247-3 |
Stock6,704 |
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15A | 260V | 1V @ 500mA, 5A | 10µA (ICBO) | 75 @ 3A, 5V | 150W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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Rohm Semiconductor |
TRANS PNP 120V 1.5A ATV
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock5,968 |
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1.5A | 120V | 2V @ 100mA, 1A | 1µA (ICBO) | 120 @ 100mA, 5V | 1W | 50MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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ON Semiconductor |
TRANS PNP 20V 5A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 320MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock48,000 |
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5A | 20V | 500mV @ 60mA, 3A | 500nA (ICBO) | 100 @ 500mA, 2V | 1.3W | 320MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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ON Semiconductor |
TRANS PNP 100V 2A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 490mW
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,312,800 |
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2A | 100V | 250mV @ 200mA, 2A | 100nA (ICBO) | 120 @ 500mA, 2V | 490mW | 120MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Micro Commercial Co |
TRANS NPN DARL 60V 2A TO-220AB
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 50W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock19,440 |
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2A | 60V | 2.5V @ 8mA, 2A | 2mA | 1000 @ 1A, 4V | 50W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Diodes Incorporated |
TRANS NPN 20V 4.5A DFN
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 3W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock40,164 |
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4.5A | 20V | 270mV @ 125mA, 4.5A | 25nA | 200 @ 2A, 2V | 3W | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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Diodes Incorporated |
TRANS PNP 60V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 150MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock5,328 |
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1A | 60V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 2W | 150MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 0.2A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 300MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock228,984 |
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200mA | 40V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 350mW | 300MHz | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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ON Semiconductor |
TRANS PNP 250V 8A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock163,584 |
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8A | 250V | 500mV @ 100mA, 1A | 10µA (ICBO) | 10 @ 2A, 5V | 2W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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STMicroelectronics |
TRANS NPN 100V 25A TO-247
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Power - Max: 125W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock19,908 |
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25A | 100V | 4V @ 5A, 25A | 1mA | 10 @ 15A, 4V | 125W | 3MHz | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Solid State Inc. |
TRANS PNP DARL 120V 30A TO3
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
- Power - Max: 200 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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30 A | 120 V | 4V @ 300mA, 30A | 1mA | 1000 @ 20A, 5V | 200 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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onsemi |
NPN EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
TRANS NPN 45V 3A POWERDI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 1A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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Package: - |
Stock5,475 |
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3 A | 45 V | 300mV @ 5mA, 1A | 20nA (ICBO) | 500 @ 100mA, 2V | 900 mW | 150MHz | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PowerDI3333-8 (SWP) Type UX |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 55 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 300mA, 1.5A
- Current - Collector Cutoff (Max): 25µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 4V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
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6 A | 55 V | 3V @ 300mA, 1.5A | 25µA (ICBO) | 25 @ 1.5A, 4V | 75 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
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Microchip Technology |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
|
Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Nexperia USA Inc. |
PBHV9540Z-Q/SOT223/SC-73
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 60mA, 300mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
- Power - Max: 1.45 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Stock3,000 |
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500 mA | 400 V | 210mV @ 60mA, 300mA | 100nA | 100 @ 100mA, 10V | 1.45 W | 30MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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onsemi |
TRANS NPN SS GP 80V TO92
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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NTE Electronics, Inc |
TRANS PNP 60V 15A TO3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 115 W
- Frequency - Transition: 2.5MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
|
Package: - |
Request a Quote |
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15 A | 60 V | 3V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 115 W | 2.5MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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onsemi |
TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.3 W
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
|
Package: - |
Request a Quote |
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2 A | 30 V | 260mV @ 75mA, 1.5A | 100nA (ICBO) | 200 @ 100mA, 2V | 1.3 W | 400MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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1 A | 175 V | 600mV @ 5mA, 50mA | 10µA | 50 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |