|
|
STMicroelectronics |
TRANS NPN 400V 2A SOT-32
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
- Power - Max: 45W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
|
Package: TO-225AA, TO-126-3 |
Stock4,912 |
|
2A | 400V | 1.5V @ 400mA, 2A | 250µA | 10 @ 500mA, 5V | 45W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32-3 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 40V 0.6A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,528 |
|
600mA | 40V | 750mV @ 50mA, 500mA | - | 100 @ 150mA, 1V | 350mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
ON Semiconductor |
TRANS PNP DARL 60V 0.5A TO-92
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,416 |
|
500mA | 60V | 1.5V @ 100µA, 100mA | 500nA | 10000 @ 100mA, 5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
TRANS PNP 350V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,144 |
|
500mA | 350V | 2V @ 2mA, 20mA | 10nA | 40 @ 10mA, 10V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
TRANS NPN 250V 8A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock41,304 |
|
8A | 250V | 500mV @ 100mA, 1A | 10µA (ICBO) | 10 @ 2A, 5V | 2W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
|
|
STMicroelectronics |
TRANS PNP 140V 10A TO-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Power - Max: 100W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock7,680 |
|
10A | 140V | 700mV @ 700mA, 7A | 100nA (ICBO) | 70 @ 3A, 4V | 100W | 20MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
|
|
ON Semiconductor |
TRANS NPN DARL 350V 10A D2PAK
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Power - Max: 150W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,936 |
|
10A | 350V | 1.7V @ 250mA, 10A | 100µA | 500 @ 5A, 4.6V | 150W | 2MHz | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
STMicroelectronics |
TRANS NPN 80V 10A D2PAK-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 50W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,152 |
|
10A | 80V | 1V @ 400mA, 8A | 10µA | 40 @ 4A, 1V | 50W | - | 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
Sanken |
TRANS NPN DARL 250V 6A TO220F
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 35W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
|
Package: TO-220-3 Full Pack |
Stock7,128 |
|
6A | 250V | 1.5V @ 2mA, 2A | 100µA (ICBO) | 2000 @ 2A, 2V | 35W | 20MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
|
|
STMicroelectronics |
TRANS NPN DARL 350V 4A DPAK
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1800 @ 2A, 2V
- Power - Max: 35W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,720 |
|
4A | 350V | 2V @ 20mA, 2A | 100µA | 1800 @ 2A, 2V | 35W | - | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A VESM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: SOT-723 |
Stock90,540 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-723 | VESM |
|
|
ON Semiconductor |
TRANS PNP 250V 16A TO264
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
- Power - Max: 200W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
|
Package: TO-264-3, TO-264AA |
Stock9,744 |
|
16A | 250V | 4V @ 3.2A, 16A | 100µA | 25 @ 8A, 5V | 200W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 60V 1.5A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
|
Package: TO-225AA, TO-126-3 |
Stock13,152 |
|
1.5A | 60V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 1.25W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
|
|
NTE Electronics, Inc |
TRANS PNP 11.5V TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 11.5 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
|
Package: - |
Request a Quote |
|
- | 11.5 V | 600mV @ 10mA, 100mA | 100µA | 40 @ 100mA, 1V | 150 mW | 300MHz | -65°C ~ 100°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
|
|
Infineon Technologies |
TRANS NPN 45V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
|
1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 2 W | 100MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
- Power - Max: 200 mW
- Frequency - Transition: 450MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
25 mA | 20 V | - | 100nA (ICBO) | 40 @ 7mA, 10V | 200 mW | 450MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 250 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
- Power - Max: 360 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
|
Package: - |
Request a Quote |
|
- | 15 V | 450mV @ 10mA, 100mA | 400nA | 20 @ 100mA, 1V | 360 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
|
|
Central Semiconductor Corp |
TRANS NPN 40V 0.2A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 1.2 W
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Stock69,672 |
|
200 mA | 40 V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 1.2 W | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
8 A | 350 V | 5V @ 2.67A, 8A | 50µA | 12 @ 3A, 5V | 125 W | - | -65°C ~ 200°C | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
|
|
Micro Commercial Co |
TRANS NPN 80V 1A TO92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92MOD
|
Package: - |
Request a Quote |
|
1 A | 80 V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 5V | 900 mW | 140MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92MOD |
|
|
Microchip Technology |
TRANS NPN 40V 1.5A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
1.5 A | 40 V | 750mV @ 10mA, 200mA | 5µA (ICBO) | 35 @ 200mA, 4V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
|
|
MOSLEADER |
25V 300mW 500mA PNP SOT-23
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microchip Technology |
TRANS NPN 80V 0.001A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
1 mA | 80 V | 1.5V @ 500mA, 5A | 1mA | 30 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
|
|
Microchip Technology |
TRANS NPN 150V 0.3A UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
onsemi |
BIP NPN 0.15A 50V
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
- Power - Max: 400 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
|
Package: - |
Request a Quote |
|
150 mA | 50 V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 140 @ 1mA, 6V | 400 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 3-NP |
|
|
Sanyo |
PNP EPITAXIAL PLANAR SILICON
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 9 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 290MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
|
Package: - |
Request a Quote |
|
9 A | 30 V | 340mV @ 200mA, 4A | 100nA (ICBO) | 200 @ 500mA, 2V | 1 W | 290MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | 2-TP-FA |
|
|
Nexperia USA Inc. |
PBHV8140Z-Q/SOT223/SC-73
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 730 mW
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
|
1 A | 400 V | 250mV @ 200mA, 1A | 100nA | 100 @ 50mA, 10V | 730 mW | 25MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |