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Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,440 |
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1A | 160V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 60 @ 200mA, 5V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Central Semiconductor Corp |
TRANS PNP DARL 30A 100V DIE
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 60mA, 15A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 15A, 3V
- Power - Max: -
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock7,056 |
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30A | 100V | 2.8V @ 60mA, 15A | - | 800 @ 15A, 3V | - | 4MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
TRANS NPN 100V 5A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 400MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,440 |
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5A | 100V | 240mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 500mA, 2V | 800mW | 400MHz | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2-TP-FA |
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ON Semiconductor |
TRANS PNP DARL 30V 0.5A TO-92
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,584 |
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500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 625mW | 125MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 100V 4A DPAK-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
- Power - Max: 1.4W
- Frequency - Transition: 40MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,408 |
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4A | 100V | 600mV @ 100mA, 1A | 100nA (ICBO) | 40 @ 200mA, 1V | 1.4W | 40MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 |
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ON Semiconductor |
TRANS PNP 30V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 360MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,360 |
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100mA | 30V | 650mV @ 5mA, 100mA | 100nA | 180 @ 2mA, 5V | 625mW | 360MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN 50V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock3,024 |
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100mA | 50V | 250mV @ 10mA, 100mA | 10nA (ICBO) | 160 @ 2mA, 10V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 100V 7A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock7,936 |
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7A | 100V | 600mV @ 500mA, 5A | 10µA (ICBO) | 100 @ 3A, 5V | 1.5W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microsemi Corporation |
TRANS PNP 80V 1A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 800mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock6,608 |
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1A | 80V | 1V @ 100mA, 1A | 10µA (ICBO) | 100 @ 100mA, 5V | 800mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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ON Semiconductor |
TRANS PNP 0.7A 160V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock6,832 |
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- | - | - | - | - | - | - | - | Surface Mount | TO-243AA | PCP |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 100V 10A TO-3P
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 80W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock5,744 |
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10A | 100V | 3V @ 40mA, 10A | 2mA | 1000 @ 5A, 4V | 80W | - | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 3A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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Package: TO-225AA, TO-126-3 |
Stock16,572 |
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3A | 60V | 2V @ 150mA, 1.5A | 1µA (ICBO) | 160 @ 500mA, 5V | 1W | 60MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126-3 |
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Diodes Incorporated |
TRANS PNP 40V 0.6A SOT523
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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Package: SOT-523 |
Stock1,116,300 |
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600mA | 40V | 750mV @ 50mA, 500mA | - | 100 @ 150mA, 2V | 150mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Panasonic Electronic Components |
TRANS PNP 20V 0.03A SSMINI-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
- Power - Max: 125mW
- Frequency - Transition: 300MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
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Package: SC-89, SOT-490 |
Stock24,738 |
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30mA | 20V | 100mV @ 1mA, 10mA | 100µA | 110 @ 1mA, 10V | 125mW | 300MHz | 125°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F1 |
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ON Semiconductor |
TRANS NPN 100V 6A D2PAK-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19,020 |
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6A | 100V | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2W | 3MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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ON Semiconductor |
TRANS NPN 65V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock300,996 |
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100mA | 65V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
RH POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Panjit International Inc. |
TRANS NPN 45V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Request a Quote |
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100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 1mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microchip Technology |
TRANS PNP 175V 1A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
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1 A | 175 V | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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NTE Electronics, Inc |
TRANS PNP 250V 10A TO3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 400mA, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V
- Power - Max: 200 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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10 A | 250 V | 2.5V @ 400mA, 4A | 1mA | 20 @ 2A, 2V | 200 W | 4MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Central Semiconductor Corp |
TRANS NPN 60V 2A TO202
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V
- Power - Max: 1.75 W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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Package: - |
Stock1,959 |
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2 A | 60 V | 350mV @ 25mA, 250mA | 100nA (ICBO) | 20 @ 500mA, 1V | 1.75 W | 50MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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onsemi |
TRANS PNP 30V 2A TO237
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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Package: - |
Request a Quote |
|
2 A | 30 V | - | - | - | - | - | - | Through Hole | TO-237AA | TO-237 |
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Nexperia USA Inc. |
BSP51-Q/SOT223/SC-73
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.25 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
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1 A | 60 V | 1.3V @ 500µA, 500mA | 50nA | 2000 @ 500mA, 10V | 1.25 W | 200MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Fairchild Semiconductor |
TRANS NPN 140V 0.6A TO92-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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Package: - |
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600 mA | 140 V | 250mV @ 5mA, 50mA | 100nA (ICBO) | 60 @ 10mA, 5V | 625 mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
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Diodes Incorporated |
TRANS NPN 60V 5A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock34,359 |
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5 A | 60 V | 210mV @ 300mA, 6A | 100nA | 100 @ 2A, 1V | 1 W | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |