|
|
Microsemi Corporation |
TRANS NPN 200V 10A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
|
Package: TO-3 |
Stock3,168 |
|
10A | 200V | 1.5V @ 1A, 10A | 1mA | 10 @ 10A, 3V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-3 | TO-3 (TO-204AA) |
|
|
Microsemi Corporation |
TRANS PNP 80V 2A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock2,928 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 30V 0.5A TO-9
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,160 |
|
500mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 140 @ 2mA, 5V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
TRANS PNP DARL 100V 10A TO-220AB
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 70W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock66,456 |
|
10A | 100V | 2.5V @ 6mA, 3A | 500µA | 750 @ 3A, 3V | 70W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
|
|
ON Semiconductor |
TRANS PNP 60V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 225mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock107,400 |
|
500mA | 60V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 225mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 25V 0.3A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,160 |
|
300mA | 25V | 600mV @ 30mA, 300mA | 100nA (ICBO) | 120 @ 50mA, 1V | 400mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Diodes Incorporated |
TRANS NPN 60V 2A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock3,584 |
|
2A | 60V | 500mV @ 200mA, 2A | 100nA (ICBO) | - | 1W | 175MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
|
|
ON Semiconductor |
TRANS NPN 80V 0.5A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,000 |
|
500mA | 80V | 500mV @ 10mA, 250mA | 100nA (ICBO) | 50 @ 250mA, 1V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92 |
|
|
ON Semiconductor |
TRANS PNP 250V 16A TO247
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
- Power - Max: 200W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
|
Package: TO-247-3 |
Stock6,096 |
|
16A | 250V | 3V @ 3.2A, 16A | 100µA | 20 @ 8A, 5V | 200W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 |
|
|
Microsemi Corporation |
TRANS NPN DARL 60V 8A TO66
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 75W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: TO-213AA, TO-66-2 |
Stock3,648 |
|
8A | 60V | 3V @ 80mA, 8A | 500µA (ICBO) | 750 @ 4A, 3V | 75W | - | -55°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
|
|
Fairchild/Micross Components |
DIE TRANS NPN SWITCHING 15V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,224 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
TRANS PNP 30V 1A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock264,000 |
|
1A | 30V | 750mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 500mA, 2V | 1W | 100MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
|
|
Micro Commercial Co |
TRANS NPN 45V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 300mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 210MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,808 |
|
800mA | 45V | 700mV @ 50mA, 500mA | 200nA | 60 @ 300mA, 1V | 625mW | 210MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
|
|
Nexperia USA Inc. |
TRANS NPN 50V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
- Power - Max: 250mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,368 |
|
500mA | 50V | 600mV @ 30mA, 300mA | 10nA (ICBO) | 85 @ 150mA, 10V | 250mW | 140MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
Diodes Incorporated |
TRANS NPN 30V 0.1A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock72,000 |
|
100mA | 30V | 600mV @ 5mA, 100mA | 20nA (ICBO) | 200 @ 2mA, 5V | 200mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 400V 0.5A TO-126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
|
Package: TO-225AA, TO-126-3 |
Stock305,712 |
|
500mA | 400V | 1V @ 10mA, 100mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126-3 |
|
|
STMicroelectronics |
TRANS PNP 250V 17A TO-264
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 17A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 220W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
|
Package: TO-264-3, TO-264AA |
Stock6,384 |
|
17A | 250V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 220W | 25MHz | 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 |
|
|
Panasonic Electronic Components |
TRANS PNP 80V 3A MT-4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: MT-4-A1
|
Package: 3-SIP |
Stock6,112 |
|
3A | 80V | 1.2V @ 375mA, 3A | 100µA | 120 @ 1A, 4V | 2W | 30MHz | 150°C (TJ) | Through Hole | 3-SIP | MT-4-A1 |
|
|
Nexperia USA Inc. |
TRANS NPN 50V 3A 6TSOP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 750mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: SC-74, SOT-457 |
Stock7,952 |
|
3A | 50V | 290mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 2A, 2V | 750mW | 100MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Diodes Incorporated |
TRANS NPN 40V 0.6A SOT-223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock285,912 |
|
600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 1W | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
ON Semiconductor |
TRANS NPN 65V 0.1A SOT-723
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 265mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
|
Package: SOT-723 |
Stock232,680 |
|
100mA | 65V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 265mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
|
|
Microchip Technology |
RH DUAL - SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: U
|
Package: - |
Request a Quote |
|
- | 15 V | 450mV @ 10mA, 100mA | 400nA | 40 @ 10mA, 1V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | U |
|
|
Rohm Semiconductor |
TRANS NPN 50V 0.15A UMT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
|
Package: - |
Stock11,583 |
|
150 mA | 50 V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 200 mW | 180MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
|
|
Microchip Technology |
TRANS PNP 300V 0.2A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
200 mA | 300 V | 1.2V @ 3mA, 30mA | 250nA (ICBO) | 50 @ 30mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
|
|
Micro Commercial Co |
Interface
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
|
Package: - |
Request a Quote |
|
100 mA | 45 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 150 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Renesas Electronics Corporation |
NPN BIPOLAR TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
onsemi |
BIP PNP 50MA 300V
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
- Power - Max: 600 mW
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
|
Package: - |
Request a Quote |
|
50 mA | 300 V | - | 100nA (ICBO) | 100 @ 1mA, 6V | 600 mW | 70MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 3-NP |