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Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock5,216 |
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2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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Panasonic Electronic Components |
TRANS PNP 15V 0.05A SSMINI-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V
- Power - Max: 125mW
- Frequency - Transition: 1.5GHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3
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Package: SC-89, SOT-490 |
Stock7,264 |
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50mA | 15V | 200mV @ 1mA, 10mA | 100nA (ICBO) | 90 @ 10mA, 1V | 125mW | 1.5GHz | 125°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F3 |
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Fairchild/ON Semiconductor |
TRANS NPN 300V 0.2A TO-226
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-226
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock4,880 |
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200mA | 300V | 750mV @ 3mA, 30mA | 100nA (ICBO) | 40 @ 30mA, 10V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226 |
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NXP |
TRANS NPN 30V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,272 |
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100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 500mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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STMicroelectronics |
TRANS NPN 600V 10A ISOWATT218FX
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
- Power - Max: 63W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOWATT218FX
- Supplier Device Package: ISOWATT-218FX
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Package: ISOWATT218FX |
Stock4,752 |
|
10A | 600V | 1.5V @ 1.25A, 5A | 1mA | 5 @ 6A, 5V | 63W | - | 150°C (TJ) | Through Hole | ISOWATT218FX | ISOWATT-218FX |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,032 |
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800mA | 45V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN DARL 100V 2A TO220AB
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock114,804 |
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2A | 100V | 2.5V @ 8mA, 2A | 2mA | 1000 @ 1A, 4V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Panasonic Electronic Components |
TRANS PNP 50V 0.1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
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Package: NS-B1 |
Stock2,624 |
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100mA | 50V | 300mV @ 5mA, 50mA | 1µA | 160 @ 2mA, 10V | 300mW | 80MHz | 150°C (TJ) | Through Hole | NS-B1 | NS-B1 |
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Infineon Technologies |
TRANSISTOR AF SOT89-4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Package: TO-243AA |
Stock4,016 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 2W | 125MHz | 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 |
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Rohm Semiconductor |
TRANS PNP 60V 3A TO220FN
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 2W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FN
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Package: TO-220-3 Full Pack |
Stock2,288 |
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3A | 60V | 1.5V @ 200mA, 2A | 10µA (ICBO) | 100 @ 500mA, 5V | 2W | 15MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN |
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Diodes Incorporated |
TRANS NPN 70V 1A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 70V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock18,708 |
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1A | 70V | 500mV @ 10mA, 1A | 100nA (ICBO) | 400 @ 500mA, 2V | 1W | 150MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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ON Semiconductor |
TRANS PNP 160V 1.5A TP-FA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,968 |
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1.5A | 160V | 500mV @ 50mA, 500mA | 1µA (ICBO) | 200 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2-TP-FA |
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Central Semiconductor Corp |
TRANS PNP 60V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,656 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 200MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Central Semiconductor Corp |
TRANS NPN DARL 40V 2A TO-202
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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Package: TO-202 Long Tab |
Stock9,180 |
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2A | 40V | 1.5V @ 2mA, 1A | 100nA (ICBO) | 25000 @ 200mA, 5V | 2W | 100MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |
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Diodes Incorporated |
TRANS NPN 100V 4.5A SOT23F-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 235mV @ 450mA, 4.5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.5W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3 Flat Leads
- Supplier Device Package: SOT-23F
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Package: SOT-23-3 Flat Leads |
Stock88,836 |
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4.5A | 100V | 235mV @ 450mA, 4.5A | 50nA (ICBO) | 200 @ 100mA, 2V | 1.5W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F |
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Central Semiconductor Corp |
TRANS NPN 300V 0.15A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 30mA, 25V
- Power - Max: 1mW
- Frequency - Transition: 160MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock14,988 |
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150mA | 300V | 1V @ 3mA, 30mA | 50nA (ICBO) | 35 @ 30mA, 25V | 1mW | 160MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.15A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Power - Max: 250mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock320,964 |
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150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 1mA, 6V | 250mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Nexperia USA Inc. |
TRANS PNP 40V 0.025A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 10V
- Power - Max: 250mW
- Frequency - Transition: 325MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock97,428 |
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25mA | 40V | - | 50nA (ICBO) | 50 @ 1mA, 10V | 250mW | 325MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | 10nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Diodes Incorporated |
PWR MID PERF TRANSISTOR SOT223 T
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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Package: - |
Stock6,000 |
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2 A | 100 V | 500mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 500mA, 2V | 1.2 W | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 500 mW
- Frequency - Transition: 280MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
2.5 A | 80 V | 300mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 3V | 500 mW | 280MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Renesas Electronics Corporation |
POWER BIPOLAR TRANSISTOR
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 40mA, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 4A, 2V
- Power - Max: 50 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: - |
Request a Quote |
|
6 A | 300 V | 1.5V @ 40mA, 4A | 100µA | 500 @ 4A, 2V | 50 W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Microchip Technology |
TRANS NPN 80V 1A TO46
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46 (TO-206AB)
|
Package: - |
Request a Quote |
|
1 A | 80 V | 500mV @ 50mA, 500mA | 10nA | 50 @ 500mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 (TO-206AB) |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: - |
Request a Quote |
|
5 A | 80 V | 250mV @ 100µA, 1mA | - | - | 30 W | - | -65°C ~ 200°C (TJ) | Stud Mount | TO-111-4, Stud | TO-111 |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
TRANS NPN 45V 0.5A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Stock8,940 |
|
500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 300 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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|
Microchip Technology |
TRANSISTOR SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |