|
|
Microsemi Corporation |
TRANS NPN 100V 0.02A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock4,960 |
|
20mA | 100V | - | - | - | - | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
|
|
Panasonic Electronic Components |
TRANS NPN 25V 3A MINIP-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MiniP3-F2
|
Package: TO-243AA |
Stock7,888 |
|
3A | 25V | 1V @ 100mA, 3A | 100nA (ICBO) | 230 @ 500mA, 2V | 1W | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | MiniP3-F2 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 40V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 1V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,864 |
|
100mA | 40V | 300mV @ 5mA, 50mA | 25nA | 150 @ 1mA, 1V | 625mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 50V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,800 |
|
100mA | 50V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 60 @ 2mA, 5V | 350mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 25V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,928 |
|
100mA | 25V | 500mV @ 1mA, 10mA | 50nA (ICBO) | 400 @ 100µA, 5V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Infineon Technologies |
TRANS PNP 300V 0.2A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 360mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,296 |
|
200mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 30mA, 10V | 360mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
|
|
Microsemi Corporation |
TRANS NPN 80V 3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 5µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock6,592 |
|
3A | 80V | 500mV @ 200mA, 2A | 5µA | 20 @ 1A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
|
|
Diodes Incorporated |
TRANS NPN 450V 4A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 75W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock6,688 |
|
4A | 450V | 900mV @ 1A, 4A | - | 8 @ 2A, 5V | 75W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
|
|
TSC America Inc. |
TRANSISTOR, NPN, 400V, 0.3A, 100
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,848 |
|
300mA | 400V | 1V @ 5mA, 50mA | 1µA | 100 @ 1mA, 5V | 1W | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
|
|
Rohm Semiconductor |
TRANS PNP 40V 0.2A SST3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,488 |
|
200mA | 40V | 500mV @ 10mA, 100mA | 500nA (ICBO) | 100 @ 1mA, 5V | 200mW | 140MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
|
|
ON Semiconductor |
TRANS PNP 80V 0.5A SC70-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 150mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
|
Package: SC-70, SOT-323 |
Stock4,496 |
|
500mA | 80V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 150mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
|
Nexperia USA Inc. |
TRANS NPN DARL 30V 0.5A SOT23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,304 |
|
500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 250mW | 125MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 30V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,424 |
|
100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Central Semiconductor Corp |
TRANS NPN 45V 30MA SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,692 |
|
30mA | 45V | 1V @ 500µA, 10mA | 10nA | 100 @ 10µA, 5V | 350mW | 30MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
|
ON Semiconductor |
TRANS PNP DARL 100V 15A TO220AB
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 85W
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock7,212 |
|
15A | 100V | 3V @ 50mA, 10A | 2mA | 1000 @ 5A, 4V | 85W | 4MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
|
|
Nexperia USA Inc. |
TRANS NPN 45V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock107,928 |
|
100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
Diodes Incorporated |
GENERAL PURPOSE TRANSISTOR SOT23
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 310 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
500 mA | 60 V | 1V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 310 mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Diodes Incorporated |
SS MID-PERF TRANSISTOR SOT23 T&R
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 10V
- Power - Max: 500 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Stock9,000 |
|
1 A | 150 V | 300mV @ 50mA, 500mA | 100nA | 10 @ 1A, 10V | 500 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Microchip Technology |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
|
|
Microchip Technology |
TRANS PNP 200V 1A U4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
1 A | 200 V | 2V @ 5mA, 50mA | 50µA | 30 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
|
|
onsemi |
TRANS NPN 140V 0.7A TO92-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
- Power - Max: 800 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
|
Package: - |
Request a Quote |
|
700 mA | 140 V | 700mV @ 20mA, 200mA | 100nA (ICBO) | 120 @ 50mA, 2V | 800 mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
|
|
Nexperia USA Inc. |
TRANS PNP 60V 0.6A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.15 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 1.15 W | 200MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
Microsemi Corporation |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
200 mA | 500 V | 1.4V @ 5mA, 25mA | 10nA (ICBO) | 30 @ 25mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 200 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
16 A | 140 V | - | - | - | 200 W | - | - | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
|
|
onsemi |
TRANS NPN 45V 0.5A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
500 mA | 45 V | 620mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 300 mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
NTE Electronics, Inc |
TRANS NPN 300V 0.1A TO202
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
- Power - Max: 1.67 W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
|
Package: - |
Request a Quote |
|
100 mA | 300 V | - | 10µA (ICBO) | 30 @ 20mA, 10V | 1.67 W | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |
|
|
Microchip Technology |
TRANS PNP 60V 0.03A UB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
30 mA | 60 V | 300mV @ 500µA, 10mA | 10nA | 60 @ 500µA, 5V | 400 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UB |
|
|
onsemi |
BIP NPN 2.5A 8700V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |