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Infineon Technologies |
TRANS PNP 300V 0.2A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock5,504 |
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200mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 30mA, 10V | 1.5W | 100MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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Microsemi Corporation |
TRANS NPN 90V 20A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 90V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
- Power - Max: 140W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-3
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Package: TO-205AD, TO-39-3 Metal Can |
Stock2,240 |
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20A | 90V | 1V @ 1.2A, 12A | 1µA | 50 @ 2A, 5V | 140W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-3 |
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Bourns Inc. |
TRANS NPN 140V 3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 750MA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock5,648 |
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3A | 140V | 2.5V @ 750MA, 3A | 300µA | 25 @ 1A, 4V | 2W | - | - | Through Hole | TO-220-3 | TO-220 |
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STMicroelectronics |
TRANS NPN 400V 1.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 600mA, 3V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92AP
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,064 |
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1.5A | 400V | 1V @ 250mA, 1A | - | 10 @ 600mA, 3V | 1.5W | - | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92AP |
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Toshiba Semiconductor and Storage |
TRANS PNP 20V 5A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock74,520 |
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5A | 20V | 1V @ 100mA, 4A | 100nA (ICBO) | 160 @ 500mA, 2V | 1W | 170MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,584 |
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200mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 130 @ 100mA, 5V | 625mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN DARL 60V 0.5A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,936 |
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500mA | 60V | 1.5V @ 100µA, 100mA | 500nA | 10000 @ 100mA, 5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 150V 2A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V
- Power - Max: 25W
- Frequency - Transition: 5MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock6,512 |
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2A | 150V | 1V @ 50mA, 500mA | 50µA (ICBO) | 120 @ 400mA, 10V | 25W | 5MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 150V 2A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V
- Power - Max: 25W
- Frequency - Transition: 5MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock5,440 |
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2A | 150V | 1V @ 50mA, 500mA | 50µA (ICBO) | 120 @ 400mA, 10V | 25W | 5MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,264 |
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100mA | 50V | 700mV @ 1mA, 10mA | 50nA (ICBO) | 200 @ 100µA, 5V | 625mW | 30MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,928 |
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500mA | 45V | 620mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 300mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,544 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Microsemi Corporation |
TRANS NPN DARL 60V 10A TO3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
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Package: TO-204AA, TO-3 |
Stock5,456 |
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10A | 60V | 3V @ 100mA, 10A | 1mA | 1000 @ 5A, 3V | 6W | - | -55°C ~ 175°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
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Diodes Incorporated |
TRANS PNP 400V 0.5A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock2,304 |
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500mA | 400V | 500mV @ 10mA, 100mA | 100nA | 40 @ 200mA, 10V | 1W | 50MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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ON Semiconductor |
TRANS PNP 100V 2A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock7,296 |
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2A | 100V | 220mV @ 200mA, 2A | 100nA (ICBO) | 120 @ 500mA, 2V | 800mW | 120MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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ON Semiconductor |
TRANS PNP 45V 0.5A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 225mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,928 |
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500mA | 45V | 620mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 225mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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ON Semiconductor |
TRANS NPN 60V 10A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 75W
- Frequency - Transition: 2MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock162,000 |
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10A | 60V | 8V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 75W | 2MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Nexperia USA Inc. |
TRANS NPN 100V 1A 6TSOP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
- Power - Max: 1.1W
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock7,440 |
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1A | 100V | 360mV @ 400mA, 4A | 100nA | 170 @ 500mA, 2V | 1.1W | 140MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Diodes Incorporated |
TRANS NPN 100V 4.5A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 2.1W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock69,204 |
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4.5A | 100V | 195mV @ 500mA, 5A | 50nA (ICBO) | 100 @ 2A, 2V | 2.1W | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Micro Commercial Co |
Interface
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 350 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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1.5 A | 40 V | 330mV @ 100mA, 1.5A | 100nA (ICBO) | 300 @ 10mA, 2V | 350 mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Micro Commercial Co |
TRANS PNP 25V 0.5A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 1mA, 4V
- Power - Max: 625 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
500 mA | 25 V | 600mV @ 50mA, 500mA | 200nA | 190 @ 1mA, 4V | 625 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Rohm Semiconductor |
TRANS NPN 45V 0.1A UMT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: - |
Stock8,895 |
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100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200 mW | 200MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
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onsemi |
BJT SOT23 30V PNP 0.25W 150C
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 310 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
100 mA | 30 V | 650mV @ 5mA, 100mA | - | 420 @ 2mA, 5V | 310 mW | 150MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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NTE Electronics, Inc |
TRANS NPN DARL 100V 0.5A TO92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
500 mA | 100 V | 1.5V @ 100µA, 100mA | 500nA | 10000 @ 100mA, 5V | 625 mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
PNP EPITAXIAL PLANAR SILICON
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220ML
|
Package: - |
Request a Quote |
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5 A | 60 V | 400mV @ 125mA, 2.5A | 100µA (ICBO) | 100 @ 1A, 2V | 2 W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220ML |
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Nexperia USA Inc. |
PBSS302ND-Q/SOT457/SC-74
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 360 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: - |
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4 A | 40 V | 450mV @ 600mA, 6A | 100nA | 300 @ 1A, 2V | 360 mW | 150MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Infineon Technologies |
TRANS PNP 45V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
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1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 2 W | 125MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |