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Central Semiconductor Corp |
TRANS PNP DARL 30A 120V DIE
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock3,344 |
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30A | 120V | 4V @ 300mA, 30A | 1mA | 200 @ 30A, 5V | - | - | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
TRANS NPN 400V 6A TO-220FP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
- Power - Max: 40W
- Frequency - Transition: 14MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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Package: TO-220-3 Full Pack |
Stock3,408 |
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6A | 400V | 700mV @ 600mA, 3A | 100µA | 14 @ 500mA, 5V | 40W | 14MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP |
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ON Semiconductor |
TRANS NPN DARL 350V 10A TO-218
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Power - Max: 150W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
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Package: TO-218-3 |
Stock2,928 |
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10A | 350V | 1.7V @ 250mA, 10A | 100µA | 500 @ 5A, 4.6V | 150W | 2MHz | -65°C ~ 175°C (TJ) | Through Hole | TO-218-3 | SOT-93 |
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Fairchild/ON Semiconductor |
TRANS PNP 40V 2A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock5,456 |
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2A | 40V | 450mV @ 50mA, 2A | 100nA | 300 @ 10mA, 2V | 500mW | - | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 20V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,200 |
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500mA | 20V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 200 @ 100mA, 1V | 500mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,904 |
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100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Panasonic Electronic Components |
TRANS NPN 100V 5A TOP-3F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 3W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TOP-3F
- Supplier Device Package: TOP-3F-A1
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Package: TOP-3F |
Stock2,864 |
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5A | 100V | 2V @ 300mA, 3A | 50µA (ICBO) | 100 @ 1A, 5V | 3W | 20MHz | 150°C (TJ) | Through Hole | TOP-3F | TOP-3F-A1 |
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Rohm Semiconductor |
TRANS NPN 32V 0.5A SPT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
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Package: SC-72 Formed Leads |
Stock4,336 |
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500mA | 32V | 600mV @ 50mA, 500mA | 1µA (ICBO) | 180 @ 100mA, 3V | 300mW | 250MHz | 150°C (TJ) | Through Hole | SC-72 Formed Leads | SPT |
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Panasonic Electronic Components |
TRANS PNP 50V 1A TO-92L
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
- Power - Max: 1W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,336 |
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1A | 50V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 120 @ 500mA, 10V | 1W | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92 |
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Panasonic Electronic Components |
TRANS NPN 120V 0.5A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 150mA, 10V
- Power - Max: 1.2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
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Package: TO-225AA, TO-126-3 |
Stock5,920 |
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500mA | 120V | 1V @ 30mA, 300mA | - | 90 @ 150mA, 10V | 1.2W | 200MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126B-A1 |
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Toshiba Semiconductor and Storage |
TRANS PNP 160V 18A TO-3PL
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 18A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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Package: TO-3PL |
Stock6,304 |
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18A | 160V | 2V @ 900mA, 9A | 1µA (ICBO) | 80 @ 1A, 5V | 180W | 30MHz | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) |
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ON Semiconductor |
TRANS PNP 50V 5A TP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock96,000 |
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5A | 50V | 550mV @ 150mA, 3A | 1µA (ICBO) | 140 @ 500mA, 2V | 1W | 130MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP |
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TSC America Inc. |
TRANSISTOR, PNP, -45V, 0.5A, 250
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock6,816 |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 250 @ 100mA, 1V | 200mW | 80MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Panasonic Electronic Components |
TRANS NPN 50V 0.1A SSMINI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 125mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3-B
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Package: SC-89, SOT-490 |
Stock4,016 |
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100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 210 @ 2mA, 10V | 125mW | 150MHz | 150°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F3-B |
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ON Semiconductor |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 225mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock118,080 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 225mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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ON Semiconductor |
TRANS PNP 45V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,398 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Nexperia USA Inc. |
TRANS PNP 30V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock29,430 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock69,726 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock151,398 |
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1A | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Microchip Technology |
TRANS PNP 60V 0.6A UA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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Rohm Semiconductor |
TRANS NPN 80V 0.7A TSMT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 500 mW
- Frequency - Transition: 320MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: TSMT3
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Package: - |
Stock7,089 |
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700 mA | 80 V | 300mV @ 15mA, 300mA | 1µA (ICBO) | 120 @ 100mA, 3V | 500 mW | 320MHz | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 |
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Nexperia USA Inc. |
BCP54-16-Q/SOT223/SC-73
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 650 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Request a Quote |
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1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 650 mW | 180MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Central Semiconductor Corp |
TRANS NPN 65V 0.1A DIE
- Transistor Type: -
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500 mW | - | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia USA Inc. |
BC807-25H/SOT23/TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 320 mW
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock7,065 |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 320 mW | 80MHz | -55°C ~ 175°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Micro Commercial Co |
TRANS NPN 160V 1A TO92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 20MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: - |
Request a Quote |
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1 A | 160 V | 1V @ 50mA, 500mA | 10µA | 160 @ 200mA, 5V | 900 mW | 20MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
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500 mA | 80 V | 250mV @ 10mA, 100mA | - | 100 @ 100mA, 1V | 625 mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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onsemi |
SS SOT223 GP XSTR SPCL TR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Nexperia USA Inc. |
BC55PAS-Q/SOT1061/HUSON3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 420 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: DFN2020D-3
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Package: - |
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1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 420 mW | 180MHz | 150°C (TJ) | Surface Mount | 3-UDFN Exposed Pad | DFN2020D-3 |