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Infineon Technologies |
TRANS PREBIAS PNP SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,168 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V SC71
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock3,152 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | SC-71 | MSTM |
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ON Semiconductor |
TRANS PNP 50V 2A NMP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 430mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 420MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: 3-NMP
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Package: SC-71 |
Stock4,256 |
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2A | 50V | 430mV @ 50mA, 1A | 1µA (ICBO) | 200 @ 100mA, 2V | 900mW | 420MHz | 150°C (TJ) | Through Hole | SC-71 | 3-NMP |
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Rohm Semiconductor |
TRANS NPN 60V 3A 3-PIN ATV
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 1W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock2,384 |
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3A | 60V | 500mV @ 200mA, 2A | 1µA (ICBO) | 180 @ 100mA, 2V | 1W | 200MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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ON Semiconductor |
TRANS NPN 15V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,688 |
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200mA | 15V | 250mV @ 1mA, 10mA | 400nA | 40 @ 10mA, 1V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 80V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,856 |
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500mA | 80V | 300mV @ 100mA, 1A | 100nA (ICBO) | 160 @ 100mA, 2V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 45V 0.2A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,000 |
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200mA | 45V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 500 @ 10mA, 5V | 625mW | 160MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 120V 0.05A TO-92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock2,544 |
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50mA | 120V | 300mV @ 1mA, 10mA | 1µA | 300 @ 1mA, 6V | 300mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 12V
- Power - Max: 250mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,100 |
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100mA | 30V | 400mV @ 1mA, 10mA | 100nA (ICBO) | 120 @ 2mA, 12V | 250mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 40V 0.2A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 10mA, 1V
- Power - Max: 230mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,528 |
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200mA | 40V | 400mV @ 5mA, 50mA | 50nA (ICBO) | 110 @ 10mA, 1V | 230mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,792 |
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500mA | 25V | 250mV @ 1mA, 10mA | 100nA (ICBO) | 100 @ 10mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 70V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 115W
- Frequency - Transition: 2.5MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock6,793,764 |
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15A | 70V | 3V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 115W | 2.5MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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ON Semiconductor |
TRANS NPN 30V 0.7A MCPH3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
- Power - Max: 600mW
- Frequency - Transition: 540MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCPH
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Package: SC-70, SOT-323 |
Stock4,240 |
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700mA | 30V | 190mV @ 10mA, 200mA | 100nA (ICBO) | 300 @ 50mA, 2V | 600mW | 540MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | 3-MCPH |
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Nexperia USA Inc. |
BCP56/SC-73/REEL 13" Q1/T1 *ST
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock6,048 |
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- | - | - | - | - | - | - | - | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Rohm Semiconductor |
PNP -100MA -400V MIDDLE POWER TR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock6,400 |
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100mA | 400V | 400mV @ 2mA, 20mA | 10µA (ICBO) | 82 @ 10mA, 10V | 500mW | - | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Panasonic Electronic Components |
TRANS NPN 300V 0.07A TO-92NL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Power - Max: 1W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92NL-A1
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Package: TO-226-3, TO-92-3 Long Body |
Stock3,472 |
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70mA | 300V | 1.2V @ 5mA, 50mA | 2µA (ICBO) | 60 @ 5mA, 10V | 1W | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92NL-A1 |
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Nexperia USA Inc. |
IC TRANS PNP 1A 60 SOT1061
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 420mW
- Frequency - Transition: 145MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: DFN2020D-3
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Package: 3-SMD, No Lead |
Stock22,116 |
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1A | 60V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 420mW | 145MHz | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | DFN2020D-3 |
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Central Semiconductor Corp |
TRANS NPN 50V 7A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
- Power - Max: 40W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock5,568 |
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7A | 50V | 3.5V @ 3A, 7A | 1mA | 30 @ 2.5A, 4V | 40W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Rohm Semiconductor |
TRANS NPN 40V 0.6A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock4,190,880 |
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600mA | 40V | 1V @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 10V | 200mW | 300MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
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Central Semiconductor Corp |
TRANS PNP 300V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 350mW
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock29,592 |
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500mA | 300V | 500mV @ 2mA, 20mA | 250nA (ICBO) | 25 @ 30mA, 10V | 350mW | 50MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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Diodes Incorporated |
SS HI VOLTAGE TRANSISTOR SOT23 T
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 300 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock18,000 |
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500 mA | 300 V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 300 mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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onsemi |
8A, NPN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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10 A | 120 V | 2.5V @ 1A, 10A | 10µA | 40 @ 5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Nexperia USA Inc. |
TRANS PNP 45V 0.5A TO236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock19,743 |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 250 @ 100mA, 1V | 250 mW | 80MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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onsemi |
2SA1249 - TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: - |
Request a Quote |
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1.5 A | 160 V | 500mV @ 50mA, 500mA | 1µA (ICBO) | 140 @ 100mA, 5V | 1 W | 120MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Microchip Technology |
TRANS NPN 80V 500UA TO66
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 µA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
- Power - Max: 25 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: - |
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500 µA | 80 V | 2.5V @ 100mA, 1A | 500µA | 40 @ 500mA, 5V | 25 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 650 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 650 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |