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ON Semiconductor |
TRANS NPN 40V 0.6A SOT23
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,312 |
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ON Semiconductor |
TRANS NPN 40V 0.6A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 225mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,424 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 225mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild/ON Semiconductor |
TRANS NPN 80V 3A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock53,292 |
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3A | 80V | 1.2V @ 375mA, 3A | 300µA | 10 @ 3A, 4V | 2W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 80V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,520 |
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200mA | 80V | 200mV @ 100µA, 1mA | 10nA (ICBO) | 60 @ 10mA, 1V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS NPN 60V 5A I-PAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 15W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-Pak
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,664 |
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5A | 60V | 600mV @ 200mA, 5A | 100nA (ICBO) | 200 @ 100mA, 2V | 15W | 150MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-Pak |
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Fairchild/ON Semiconductor |
TRANS NPN 250V 17A TO-3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 17A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Power - Max: 130W
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock5,200 |
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17A | 250V | 3V @ 800mA, 8A | 5µA (ICBO) | 55 @ 1A, 5V | 130W | 30MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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STMicroelectronics |
TRANS NPN 45V 8A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2A, 2V
- Power - Max: 50W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock7,712 |
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8A | 45V | 800mV @ 600mA, 6A | 100µA | 25 @ 2A, 2V | 50W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Toshiba Semiconductor and Storage |
TRANS PNP 180V 2A TO220NIS
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock2,560 |
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2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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Nexperia USA Inc. |
TRANS PNP 40V 4A 6TSOP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 2A, 2V
- Power - Max: 360mW
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock5,152 |
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4A | 40V | 450mV @ 600mA, 6A | 100nA (ICBO) | 175 @ 2A, 2V | 360mW | 110MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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STMicroelectronics |
TRANS PNP 40V 1.5A SOT23
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,600 |
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Rohm Semiconductor |
TRANS NPN 11V 0.05A SOT-346
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 11V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 3.2GHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,366,420 |
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50mA | 11V | 500mV @ 5mA, 10mA | 500nA (ICBO) | 56 @ 5mA, 10V | 200mW | 3.2GHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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Central Semiconductor Corp |
TRANS NPN 100V 2A DPAK
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 1.75W
- Frequency - Transition: 25MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,016 |
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2A | 100V | 3V @ 40mA, 4A | 20µA | 1000 @ 2A, 3V | 1.75W | 25MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
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Panasonic Electronic Components |
TRANS NPN 40V 0.05A SMINI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2-B
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Package: SC-85 |
Stock5,888 |
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50mA | 40V | 200mV @ 1mA, 10mA | 1µA | 600 @ 2mA, 10V | 150mW | 150MHz | 150°C (TJ) | Surface Mount | SC-85 | SMini3-F2-B |
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Sanken |
TRANS PNP 160V 15A TO3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Power - Max: 130W
- Frequency - Transition: 40MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock35,964 |
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15A | 160V | 2V @ 500mA, 5A | 100µA (ICBO) | 50 @ 5A, 4V | 130W | 40MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Nexperia USA Inc. |
TRANS NPN 80V 1A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock78,756 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 1.25W | 180MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Nexperia USA Inc. |
TRANS NPN 80V 0.5A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Stock99,750 |
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500 mA | 80 V | 400mV @ 5mA, 50mA | 100µA | 100 @ 100mA, 1V | 200 mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Renesas Electronics Corporation |
SMALL SIGNAL BIPOLAR TRANS PNP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 16 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SSIP
- Supplier Device Package: -
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Package: - |
Request a Quote |
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1 A | 16 V | 400mV @ 50mA, 1A | 100nA (ICBO) | 135 @ 100mA, 2V | 1 W | 50MHz | 150°C (TJ) | Through Hole | 3-SSIP | - |
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onsemi |
SMALL SIGNAL BIPOLAR TRANSTR NPN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V
- Power - Max: 1 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: 3-MP
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Package: - |
Request a Quote |
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1.2 A | 50 V | 1.5V @ 2mA, 500mA | 10µA (ICBO) | 1000 @ 500mA, 5V | 1 mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 3-MP |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 2A TSM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TSM
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Package: - |
Stock18,000 |
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2 A | 50 V | 200mV @ 33mA, 1A | 100nA (ICBO) | 200 @ 300mA, 2V | 625 mW | - | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM |
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onsemi |
BIP PNP 3A 40V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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NTE Electronics, Inc |
TRANS NPN 35V 0.05A 3SIP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
- Power - Max: 600 mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SIP
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Package: - |
Request a Quote |
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50 mA | 35 V | 500mV @ 2mA, 20mA | 10µA | 20 @ 10mA, 10V | 600 mW | 500MHz | 150°C (TJ) | Through Hole | 3-SIP | 3-SIP |
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Nexperia USA Inc. |
PMBT4403-Q/SOT23/TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock8,700 |
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600 mA | 40 V | 750mV @ 50mA, 500mA | 50nA (ICBO) | 100 @ 150mA, 2V | 250 mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Nexperia USA Inc. |
TRANS PNP 45V 0.5A TO236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock16,770 |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 250 mW | 80MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Nexperia USA Inc. |
PBHV9040X-Q/SOT89/MPT3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 250 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 520 mW
- Frequency - Transition: 55MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Stock3,000 |
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250 mA | 400 V | 200mV @ 20mA, 100mA | 100nA | 100 @ 50mA, 10V | 520 mW | 55MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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Sanyo |
NPN TRIPLE DIFFUSED PLANAR SIL
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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onsemi |
POWER BIPOLAR TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1.5 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225-3
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Package: - |
Request a Quote |
|
100 mA | 300 V | - | - | - | 1.5 W | 70MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225-3 |
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onsemi |
TRANS NPN 50V 5A 3CPH
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 130mV @ 40mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 330MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CPH
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Package: - |
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5 A | 50 V | 130mV @ 40mA, 2A | 100nA (ICBO) | 250 @ 500mA, 2V | 900 mW | 330MHz | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH |