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Central Semiconductor Corp |
TRANSISTOR PNP TO-106
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,184 |
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Central Semiconductor Corp |
TRANS PNP DARL 20A 100V DIE
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock7,824 |
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20A | 100V | 3V @ 200mA, 20A | 1mA | - | - | 4MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Microsemi Corporation |
TRANS PNP 300V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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Package: 3-SMD, No Lead |
Stock3,392 |
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1A | 300V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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Fairchild/ON Semiconductor |
TRANS PNP 400V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Power - Max: 750mW
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,800 |
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500mA | 400V | 1V @ 10mA, 100mA | 1µA (ICBO) | 100 @ 50mA, 5V | 750mW | 10MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Diodes Incorporated |
TRANS PNP 400V 0.2A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock3,200 |
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200mA | 400V | 500mV @ 6mA, 50mA | 100nA | 100 @ 50mA, 10V | 1W | 50MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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Fairchild/ON Semiconductor |
TRANS NPN DARL 30V 1.2A SOT-23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 220MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,048 |
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1.2A | 30V | 1V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 350mW | 220MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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ON Semiconductor |
TRANS NPN DARL 40V 1A TO92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 Long Body |
Stock5,120 |
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1A | 40V | 1.5V @ 2mA, 1A | 100nA (ICBO) | 25000 @ 200mA, 5V | 1W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92 |
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Panasonic Electronic Components |
TRANS NPN 55V 0.05A MINI-3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 55V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,480 |
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50mA | 55V | 600mV @ 10mA, 100mA | 1µA | 260 @ 2mA, 5V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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Central Semiconductor Corp |
TRANS PNP LNA CHIP FORM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
- Power - Max: -
- Frequency - Transition: 40MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock6,272 |
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50mA | 50V | 300mV @ 1mA, 10mA | 50nA (ICBO) | 250 @ 100µA, 5V | - | 40MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Microsemi Corporation |
TRANS PNP 40V 3A TO5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock6,480 |
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3A | 40V | 1.5V @ 250mA, 2.5A | 100µA (ICBO) | 40 @ 1.5A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 1.8W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock2,928 |
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100mA | 200V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 50 @ 30mA, 10V | 1.8W | 50MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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ON Semiconductor |
TRANS PNP 40V 3A DPAK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 1.56W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock21,600 |
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3A | 40V | 1.2V @ 375mA, 3A | 50µA | 10 @ 3A, 4V | 1.56W | 3MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 |
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Rohm Semiconductor |
NPN 100MA 400V MIDDLE POWER TRAN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock5,728 |
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100mA | 400V | 300mV @ 2mA, 20mA | 10µA (ICBO) | 82 @ 10mA, 10V | 500mW | - | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Central Semiconductor Corp |
TRANS PNP 1=20PCS
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: -
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,344 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | - | 200MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia USA Inc. |
TRANS NPN 45V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock83,046 |
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100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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Rohm Semiconductor |
TRANS NPN 60V 3A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: TO-243AA |
Stock221,340 |
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3A | 60V | 500mV @ 200mA, 2A | 1µA (ICBO) | 180 @ 100mA, 2V | 2W | 200MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Micro Commercial Co |
TRANS PNP 25V 1.5A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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1.5 A | 25 V | 500mV @ 80mA, 800mA | 100nA | 160 @ 100mA, 1V | 1 W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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onsemi |
TRANS PNP 80V 8A TO-220
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
TRANS PNP DARL 100V 2A TO220AB
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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2 A | 100 V | 2.5V @ 8mA, 2A | 2mA | 1000 @ 1A, 4V | 2 W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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onsemi |
TRANS NPN 50V 0.1A TO92-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: - |
Request a Quote |
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100 mA | 50 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500 mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Central Semiconductor Corp |
TRANS NPN 40V 3A TO126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: - |
Stock3,336 |
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3 A | 40 V | 1.7V @ 600mA, 3A | 100nA (ICBO) | 50 @ 100mA, 1V | 1.5 W | 50MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Micro Commercial Co |
TRANS PNP 55V 0.1A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 55 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
- Power - Max: 300 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
100 mA | 55 V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 400 @ 2mA, 12V | 300 mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Nexperia USA Inc. |
MJD32CA/SOT428/DPAK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
- Power - Max: 1.6 W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
|
Package: - |
Stock34,503 |
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3 A | 100 V | 1.2V @ 375mA, 3A | 1µA | 25 @ 1A, 4V | 1.6 W | 3MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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SparkFun Electronics |
TRANSISTOR - NPN, 50V 800MA (BC3
- Transistor Type: -
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
|
Package: - |
Request a Quote |
|
800 mA | 45 V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
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onsemi |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
- Power - Max: 1.2 W
- Frequency - Transition: 800MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
|
Package: - |
Request a Quote |
|
500 mA | 60 V | 600mV @ 10mA, 100mA | 100nA (ICBO) | 60 @ 50mA, 10V | 1.2 W | 800MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Nexperia USA Inc. |
TRANS PNP 100V 3A DPAK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
- Power - Max: 1.6 W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: - |
Stock14,184 |
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3 A | 100 V | 1.2V @ 375mA, 3A | 1µA | 25 @ 1A, 4V | 1.6 W | 3MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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Microchip Technology |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: - |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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onsemi |
TRANS NPN/PNP 65V 0.1A SOT363
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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