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Infineon Technologies |
TRANS NPN DARL 60V 1A SOT223
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock3,472 |
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1A | 60V | 1.8V @ 1mA, 1A | 10µA | 2000 @ 500mA, 10V | 1.5W | 200MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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ON Semiconductor |
TRANS PNP 20V 1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 65MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,304 |
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1A | 20V | 500mV @ 100mA, 1A | 10µA (ICBO) | 85 @ 500mA, 1V | 625mW | 65MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 80V 4A TO126
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock3,376 |
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4A | 80V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 1A TO-92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,720 |
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1A | 25V | 500mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 100mA, 1V | 350mW | 110MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.15A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock1,008,000 |
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150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 1mA, 6V | 200mW | 300MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Fairchild/ON Semiconductor |
TRANS NPN 20V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 78 @ 50mA, 1V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,192 |
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500mA | 20V | 600mV @ 50mA, 500mA | 100nA (ICBO) | 78 @ 50mA, 1V | 625mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Diodes Incorporated |
TRANS PNP 140V 0.5A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock2,240 |
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500mA | 140V | 250mV @ 50mA, 500mA | 100nA (ICBO) | 300 @ 10mA, 2V | 1W | 100MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,336 |
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500mA | 25V | - | 100nA (ICBO) | 90 @ 2mA, 4.5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,592 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1W | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Microsemi Corporation |
TRANS NPN 150V 0.3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock5,024 |
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300mA | 150V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Central Semiconductor Corp |
TRANS PNP 40V 1A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
- Power - Max: 1W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock15,072 |
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1A | 40V | 600mV @ 125mA, 1A | 1mA | 30 @ 250mA, 1V | 1W | 3MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 3A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock163,752 |
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3A | 60V | 1.2V @ 375mA, 3A | 200µA | 10 @ 3A, 4V | 2W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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ON Semiconductor |
TRANS PNP 60V 6A TO-220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock9,240 |
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6A | 60V | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2W | 3MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock238,086 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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ON Semiconductor |
TRANS PNP 50V 5A TP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 360MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock53,400 |
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5A | 50V | 430mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 500mA, 2V | 800mW | 360MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP |
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ON Semiconductor |
TRANS PNP 80V 4A TO225AA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
- Power - Max: 40W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock129,216 |
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4A | 80V | 1.4V @ 1A, 4A | 1mA | 20 @ 1.5A, 2V | 40W | 2MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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Nexperia USA Inc. |
TRANS PNP 65V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock258,390 |
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100mA | 65V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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onsemi |
BIP NPN 1.5A 15V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
TRANS NPN 100V 3A TO220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: - |
Request a Quote |
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3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Central Semiconductor Corp |
TRANS NPN DARL 60V 0.5A DIE
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: -
- Frequency - Transition: 125MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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500 mA | 60 V | 1.5V @ 100µA, 100mA | 500nA | 10000 @ 100mA, 5V | - | 125MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Microchip Technology |
TRANS NPN 80V 10A TO61
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package: TO-61
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Package: - |
Request a Quote |
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10 A | 80 V | - | - | - | - | - | 200°C (TJ) | Stud Mount | TO-211MA, TO-210AC, TO-61-4, Stud | TO-61 |
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Central Semiconductor Corp |
TRANS NPN 30V TO92-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: - |
Stock10,002 |
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- | 30 V | - | 100nA (ICBO) | 100 @ 1mA, 5V | - | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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onsemi |
TRANS NPN 100V 3A LFPAK4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1023, 4-LFPAK
- Supplier Device Package: LFPAK4 (5x6)
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Package: - |
Stock9,000 |
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3 A | 100 V | 250mV @ 300mA, 3A | 100nA (ICBO) | 200 @ 500mA, 2V | 1 W | 120MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-1023, 4-LFPAK | LFPAK4 (5x6) |
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Sanyo |
PNP SILICON TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
- Power - Max: 300 mW
- Frequency - Transition: 520MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
|
Package: - |
Request a Quote |
|
300 mA | 30 V | 220mV @ 5mA, 100mA | 100nA (ICBO) | 200 @ 10mA, 2V | 300 mW | 520MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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NTE Electronics, Inc |
TRANS PNP DARL 50V 2A TO202
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
- Power - Max: 1.67 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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Package: - |
Request a Quote |
|
2 A | 50 V | 1.5V @ 3mA, 1.5A | 500nA | 10000 @ 200mA, 5V | 1.67 W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |
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onsemi |
TRANS NPN 80V 1A TO92-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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Package: - |
Stock92,733 |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 1 W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
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Nexperia USA Inc. |
TRANS NPN 45V 0.5A TO236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 250 mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Request a Quote |
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1 A | 32 V | 400mV @ 50mA, 500mA | 500nA (ICBO) | 180 @ 100mA, 3V | 500 mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |