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Nexperia USA Inc. |
TRANS BISS TO-236AB
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,112 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V SC71
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock5,264 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | SC-71 | MSTM |
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ON Semiconductor |
TRANS PNP 50V 2A MP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1W
- Frequency - Transition: 420MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: 3-MP
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,296 |
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2A | 50V | 400mV @ 50mA, 1A | 1µA (ICBO) | 200 @ 100mA, 2V | 1W | 420MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 3-MP |
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Panasonic Electronic Components |
TRANS NPN 100V 0.02A SMINI-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 90MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2
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Package: SC-85 |
Stock2,340,000 |
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20mA | 100V | 200mV @ 1mA, 10mA | 1µA | 600 @ 2mA, 10V | 150mW | 90MHz | 150°C (TJ) | Surface Mount | SC-85 | SMini3-F2 |
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Fairchild/ON Semiconductor |
TRANS PNP 230V 15A TO-220F
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Power - Max: 50W
- Frequency - Transition: 30MHz
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock6,320 |
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15A | 230V | 3V @ 800mA, 8A | 5µA (ICBO) | 55 @ 1A, 5V | 50W | 30MHz | -50°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 450V 5A D2-PAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
- Power - Max: 75W
- Frequency - Transition: 11MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,000 |
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5A | 450V | 500mV @ 200mA, 1A | 100µA | 6 @ 2A, 1V | 75W | 11MHz | 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Fairchild/ON Semiconductor |
TRANS NPN 10V 2A TO-92L
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V
- Power - Max: 900mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock6,960 |
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2A | 10V | 500mV @ 50mA, 2A | 100nA (ICBO) | 420 @ 500mA, 1V | 900mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92-3 |
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Microsemi Corporation |
TRANS NPN 100V 0.5A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock7,376 |
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500mA | 100V | 600mV @ 30mA, 300mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Diodes Incorporated |
TRANS PNP 140V 1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
- Power - Max: 5.84W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,552 |
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1A | 140V | 260mV @ 100mA, 1A | 50nA (ICBO) | 100 @ 10mA, 2V | 5.84W | 75MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Comchip Technology |
TRANS PNP 45V 100MA SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2.2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,904 |
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100mA | 45V | 650mV @ 5mA, 100mA | - | 125 @ 2.2mA, 5V | 250mW | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
TRANS NPN 40V 0.8A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 800mW
- Frequency - Transition: 250MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock6,080 |
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800mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 40 @ 150mA, 10V | 800mW | 250MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Diodes Incorporated |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V
- Power - Max: 310mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock61,800 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 450 @ 2mA, 5V | 310mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Diodes Incorporated |
TRANS PNP 100V 5A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 3W
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock378,648 |
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5A | 100V | 340mV @ 400mA, 4A | 20nA (ICBO) | 100 @ 1A, 1V | 3W | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Diodes Incorporated |
TRANS PNP 45V 0.1A SC70-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock72,000 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 200mW | 200MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Sanken |
TRANS NPN 400V 12A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.4A, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7A, 4V
- Power - Max: 100W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock40,800 |
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12A | 400V | 500mV @ 1.4A, 7A | 100µA (ICBO) | 10 @ 7A, 4V | 100W | 10MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Fairchild/ON Semiconductor |
TRANS PNP 12V 0.2A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
- Power - Max: 225mW
- Frequency - Transition: 500MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock586,824 |
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200mA | 12V | 600mV @ 5mA, 50mA | 10nA | 30 @ 10mA, 300mV | 225mW | 500MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 10nA | 40 @ 150mA, 10V | 800 mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Infineon Technologies |
TRANS PNP 45V 0.5A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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Package: - |
Request a Quote |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 330 mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 |
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Microchip Technology |
PNP TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46
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Package: - |
Request a Quote |
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100 mA | 20 V | - | 10µA (ICBO) | 70 @ 1mA, 500mV | 400 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 1A UFM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: UFM
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Package: - |
Stock123,648 |
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1 A | 50 V | 120mV @ 6mA, 300mA | 100nA (ICBO) | 400 @ 100mA, 2V | 500 mW | - | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM |
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NTE Electronics, Inc |
TRANS NPN 140V 20A TO3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 2V
- Power - Max: 250 W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
|
Package: - |
Request a Quote |
|
20 A | 140 V | 1V @ 500mA, 5A | 250µA | 25 @ 5A, 2V | 250 W | 2MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 360 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
|
Package: - |
Request a Quote |
|
- | 15 V | 250mV @ 3mA, 30mA | 400nA | 40 @ 10mA, 1V | 360 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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Panjit International Inc. |
TRANS PNP 45V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Stock18,000 |
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100 mA | 45 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 250 mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Diodes Incorporated |
TRANS PNP 60V 1A SOT223-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
|
Package: - |
Request a Quote |
|
1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1 W | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 1mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microchip Technology |
TRANS NPN 150V 0.3A UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
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300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Central Semiconductor Corp |
TRANS PNP 70V 15A TO3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 70 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 115 W
- Frequency - Transition: 2.5MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
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15 A | 70 V | 3V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 115 W | 2.5MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |