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Infineon Technologies |
TRANS PNP 45V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock3,248 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 2W | 125MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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Central Semiconductor Corp |
TRANSISTOR TO-106
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,632 |
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- | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
TRANS NPN 60V 4A TO126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
- Power - Max: 40W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock7,680 |
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4A | 60V | 1.4V @ 1A, 4A | 1mA | 25 @ 1.5A, 2V | 40W | 2MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Microsemi Corporation |
TRANS NPN 80V 2A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock3,120 |
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2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microsemi Corporation |
TRANS PNP 60V 0.2A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 360mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock5,392 |
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200mA | 60V | 500mV @ 5mA, 50mA | 10µA (ICBO) | 100 @ 10mA, 1V | 360mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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ON Semiconductor |
TRANS NPN 100V 4A FLP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 1.5W
- Frequency - Transition: 180MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 No Tab
- Supplier Device Package: FLP
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Package: TO-220-3 No Tab |
Stock6,320 |
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4A | 100V | 400mV @ 200mA, 2A | 1µA (ICBO) | 200 @ 500mA, 5V | 1.5W | 180MHz | - | Through Hole | TO-220-3 No Tab | FLP |
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ON Semiconductor |
TRANS NPN 45V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,472 |
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200mA | 45V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 500 @ 10mA, 5V | 625mW | 160MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Rohm Semiconductor |
TRANS PNP 20V 5A ATV
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock3,312 |
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5A | 20V | 1V @ 100mA, 4A | 500nA (ICBO) | 120 @ 500mA, 2V | 1W | 120MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 1A TO-92S
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock3,472 |
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1A | 30V | 500mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 100mA, 1V | 350mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,216 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,632 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 400V 5A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
- Power - Max: 75W
- Frequency - Transition: 12MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock5,424 |
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5A | 400V | 400mV @ 400mA, 2A | 100µA | 14 @ 300mA, 5V | 75W | 12MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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STMicroelectronics |
TRANS PNP 45V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock30,831,264 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microsemi Corporation |
TRANS NPN 50V 3A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock3,232 |
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3A | 50V | 1.5V @ 250mA, 2.5A | - | 30 @ 1.5A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microsemi Corporation |
TRANS NPN 40V 1.5A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock5,600 |
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1.5A | 40V | 900mV @ 100mA, 1A | 10µA (ICBO) | 20 @ 1A, 1.5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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STMicroelectronics |
TRANS NPN 125V 32A TO-247
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 32A
- Voltage - Collector Emitter Breakdown (Max): 125V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 200W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock142,800 |
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32A | 125V | 900mV @ 7A, 70A | - | - | 200W | - | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
TRANS NPN 50V 0.15A SOT-323
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: MCP
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Package: SC-70, SOT-323 |
Stock36,000 |
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- | - | - | - | - | - | - | - | Surface Mount | SC-70, SOT-323 | MCP |
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Rohm Semiconductor |
TRANS PNP 80V 2.5A TSMT3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 1W
- Frequency - Transition: 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: TSMT3
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Package: SC-96 |
Stock4,416 |
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2.5A | 80V | 400mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 3V | 1W | 280MHz | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 3A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 25W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock65,820 |
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3A | 60V | 1V @ 200mA, 2A | 100µA (ICBO) | 150 @ 500mA, 5V | 25W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild Semiconductor |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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200 mA | 40 V | 300mV @ 5mA, 50mA | 50nA | 100 @ 10mA, 1V | 625 mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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100 mA | 35 V | - | 10µA (ICBO) | 50 @ 1mA, 500mV | 400 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Micro Commercial Co |
TRANS PNP 80V 1A SOT89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Stock5,520 |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 500 mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Microchip Technology |
TRANS PNP 60V 600MA TO5AA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
- Power - Max: 600 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 1µA | 40 @ 500mA, 10V | 600 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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NTE Electronics, Inc |
TRANS NPN 900V 3A TO3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Vce Saturation (Max) @ Ib, Ic: 10V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 1.5A, 10V
- Power - Max: 50 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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3 A | 900 V | 10V @ 500mA, 1.5A | 10mA | 3 @ 1.5A, 10V | 50 W | - | 150°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Rohm Semiconductor |
TRANS PNP 120V 0.05A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Stock4,242 |
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50 mA | 120 V | 500mV @ 1mA, 10mA | 500nA (ICBO) | 180 @ 2mA, 6V | 200 mW | 140MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
TRANS PNP 200V 200MA TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
Request a Quote |
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200 mA | 200 V | 1.2V @ 3mA, 30mA | 250nA (ICBO) | 50 @ 30mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Microchip Technology |
TRANS PNP 225V 0.005A TO66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 mA
- Voltage - Collector Emitter Breakdown (Max): 225 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
- Power - Max: 3 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: - |
Request a Quote |
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5 mA | 225 V | 1.4V @ 125mA, 1A | 5mA | 30 @ 1A, 5V | 3 W | - | -55°C ~ 200°C (TA) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Central Semiconductor Corp |
TRANS NPN 80V TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: -
- Frequency - Transition: 40MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
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- | 80 V | - | 500nA (ICBO) | 40 @ 1A, 2V | - | 40MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |