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Infineon Technologies |
TRANS PNP 80V 1A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Package: TO-243AA |
Stock5,456 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 2W | 125MHz | 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 |
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Microsemi Corporation |
TRANS PNP 60V 0.6A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46 (TO-206AB)
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Package: TO-206AB, TO-46-3 Metal Can |
Stock4,848 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 40 @ 150mA, 10V | 400mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 (TO-206AB) |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,264 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 60V 10A DPAK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 1.75W
- Frequency - Transition: 2MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock508,416 |
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10A | 60V | 8V @ 3.3A, 10A | 50µA | 20 @ 4A, 4V | 1.75W | 2MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 |
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ON Semiconductor |
TRANS NPN 60V 15A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 115W
- Frequency - Transition: 2.5MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock7,696 |
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15A | 60V | 3V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 115W | 2.5MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 3A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 25W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock3,216 |
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3A | 60V | 1V @ 300mA, 3A | 100µA (ICBO) | 150 @ 500mA, 5V | 25W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.15A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 400mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,048 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 400mW | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Panasonic Electronic Components |
TRANS NPN 60V 3A TO-220D
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 20mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220D-A1
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Package: TO-220-3 Full Pack |
Stock6,064 |
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3A | 60V | 600mV @ 20mA, 1A | 100µA | 500 @ 500mA, 4V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220D-A1 |
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Microsemi Corporation |
TRANS NPN 40V 1A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock6,976 |
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1A | 40V | 600mV @ 100mA, 1A | 100nA (ICBO) | 30 @ 250mA, 1V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Central Semiconductor Corp |
TRANS NPN DARL 80V 10A TO220
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 65W
- Frequency - Transition: 20MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock5,360 |
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10A | 80V | - | - | - | 65W | 20MHz | - | Through Hole | TO-220-3 | TO-220 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 100V 10A TO220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 80W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock428,700 |
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10A | 100V | 3V @ 40mA, 10A | 2mA | 1000 @ 5A, 4V | 80W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 3A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
- Power - Max: 1.5W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock350,784 |
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3A | 40V | 1.7V @ 600mA, 3A | 100µA (ICBO) | 50 @ 100mA, 1V | 1.5W | 50MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Infineon Technologies |
TRANS NPN 80V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock54,702 |
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500mA | 80V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 330mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 1A TO-92 CASE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock223,860 |
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1A | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NTE Electronics, Inc |
TRANS PNP DARL 30V 0.3A SOT23
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 350 mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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300 mA | 30 V | 1V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 350 mW | 220MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
TRANSISTOR PNP TH
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
NJVMJD210T4G-VF01
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 1V
- Power - Max: 1.4 W
- Frequency - Transition: 65MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: - |
Request a Quote |
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5 A | 25 V | 1.8V @ 1A, 5A | 100nA (ICBO) | 70 @ 500mA, 1V | 1.4 W | 65MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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Diotec Semiconductor |
IC
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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100 mA | 30 V | 650mV @ 5mA, 100mA | 15nA | 110 @ 2mA, 5V | 500 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Nexperia USA Inc. |
MMBZ20VA-T/SOT23/TO-236AB
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock9,000 |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
TRANSISTOR NPN SOT-89
- Transistor Type: -
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
- Power - Max: 500 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Request a Quote |
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1 A | 32 V | 800mV @ 200mA, 2A | 1µA (ICBO) | 180 @ 500mA, 3V | 500 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Central Semiconductor Corp |
TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500 mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
100 mA | 30 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 250 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Microchip Technology |
TRANS NPN 30V 0.1A UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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100 mA | 30 V | - | - | - | - | - | 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UB |
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onsemi |
PNP SILICON TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126ML
|
Package: - |
Request a Quote |
|
100 mA | 200 V | 600mV @ 2mA, 20mA | 100nA (ICBO) | 100 @ 10mA, 10V | 1.3 W | 150MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126ML |
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Nexperia USA Inc. |
BCP51-16-Q/SOT223/SC-73
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 650 mW
- Frequency - Transition: 145MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Stock12,000 |
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1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 650 mW | 145MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Nexperia USA Inc. |
TRANS NPN 80V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 650 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 650 mW | 180MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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NTE Electronics, Inc |
TRANS NPN DARL 30V 0.5A TO202
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90000 @ 200mA, 5V
- Power - Max: 6.25 W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
|
Package: - |
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500 mA | 30 V | 1.5V @ 500µA, 500mA | 500nA | 90000 @ 200mA, 5V | 6.25 W | 75MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |
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onsemi |
BIP PNP 3A 30V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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