Page 77 - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products

2SC2655-O,F(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock7,744
2SC2235-Y,T6KEHF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock6,560
JANTX2N5667S
Microsemi Corporation

TRANS NPN 300V 5A TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock5,840
JANTX2N3584
Microsemi Corporation

TRANS NPN 250V 2A TO-39

Package: TO-213AA, TO-66-2

Stock3,744
2N5550RLRA
ON Semiconductor

TRANS NPN 140V 0.6A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,336
KSA643CYTA
Fairchild/ON Semiconductor

TRANS PNP 20V 0.5A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,536
2N5551_J18Z
Fairchild/ON Semiconductor

TRANS NPN 160V 0.6A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,056
2SD11490RL
Panasonic Electronic Components

TRANS NPN 100V 0.02A MINI 3P

Package: TO-236-3, SC-59, SOT-23-3

Stock6,576
PN5135
Fairchild/ON Semiconductor

TRANS NPN 25V 0.2A TO92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,280
2N2906AUA
Microsemi Corporation

TRANS PNP 60V 0.6A

Package: 4-SMD, No Lead

Stock6,000
JANTXV2N2907AL
Microsemi Corporation

TRANS PNP 60V 0.6A TO18

Package: TO-206AA, TO-18-3 Metal Can

Stock3,216
APT13003SZTR-G1
Diodes Incorporated

TRANS NPN 450V 1.3A TO92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,152
2SC2258
Panasonic Electronic Components

TRANS NPN 250V 0.1A TO-126

Package: TO-225AA, TO-126-3

Stock16,014
BC848B-TP
Micro Commercial Co

TRANS NPN 30V 0.1A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,944
2SC4455Q-AA
Sanyo

NPN EPITAXIAL PLANAR SILICON

Package: -

Request a Quote
JAN2N1717
Microchip Technology

TRANS NPN 100V 0.75A TO5

Package: -

Request a Quote
2SA950-Y-BP
Micro Commercial Co

TRANS PNP 30V 0.8A TO92

Package: -

Request a Quote
JANSD2N2222A
Microchip Technology

RH SMALL-SIGNAL BJT

Package: -

Request a Quote
BF421-BP
Micro Commercial Co

TRANS PNP 300V 0.1A TO92

Package: -

Request a Quote
JANKCCG2N3500
Microchip Technology

RH SMALL-SIGNAL BJT

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2655-O,F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock7,744	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock6,560	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
JANTX2N5667S	Microsemi Corporation	TRANS NPN 300V 5A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Package: TO-205AD, TO-39-3 Metal Can	Stock5,840	5A	300V	1V @ 1A, 5A	200nA	25 @ 1A, 5V	1.2W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N3584	Microsemi Corporation	TRANS NPN 250V 2A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	Package: TO-213AA, TO-66-2	Stock3,744	2A	250V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	2.5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N5550RLRA	ON Semiconductor	TRANS NPN 140V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,336	600mA	140V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSA643CYTA	Fairchild/ON Semiconductor	TRANS PNP 20V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,536	500mA	20V	400mV @ 50mA, 500mA	200nA (ICBO)	120 @ 100mA, 1V	500mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5551_J18Z	Fairchild/ON Semiconductor	TRANS NPN 160V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,056	600mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	625mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SD11490RL	Panasonic Electronic Components	TRANS NPN 100V 0.02A MINI 3P Transistor Type: NPN Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	Package: TO-236-3, SC-59, SOT-23-3	Stock6,576	20mA	100V	200mV @ 1mA, 10mA	1µA	400 @ 2mA, 10V	200mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
PN5135	Fairchild/ON Semiconductor	TRANS NPN 25V 0.2A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,280	200mA	25V	1V @ 10mA, 100mA	300nA (ICBO)	50 @ 10mA, 10V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N2906AUA	Microsemi Corporation	TRANS PNP 60V 0.6A Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	Package: 4-SMD, No Lead	Stock6,000	600mA	60V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	4-SMD
JANTXV2N2907AL	Microsemi Corporation	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	Package: TO-206AA, TO-18-3 Metal Can	Stock3,216	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
APT13003SZTR-G1	Diodes Incorporated	TRANS NPN 450V 1.3A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 1.3A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 250mA, 1A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Power - Max: 1.1W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,152	1.3A	450V	1.2V @ 250mA, 1A	-	5 @ 1A, 2V	1.1W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
2SC2258	Panasonic Electronic Components	TRANS NPN 250V 0.1A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 40mA, 20V Power - Max: 4W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126A-A1	Package: TO-225AA, TO-126-3	Stock16,014	100mA	250V	1.2V @ 5mA, 50mA	-	40 @ 40mA, 20V	4W	100MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126A-A1
BC848B-TP	Micro Commercial Co	TRANS NPN 30V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 225mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Package: TO-236-3, SC-59, SOT-23-3	Stock2,944	100mA	30V	500mV @ 5mA, 100mA	100nA	200 @ 2mA, 5V	225mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC4455Q-AA	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN2N1717	Microchip Technology	TRANS NPN 100V 0.75A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	750 mA	100 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SA950-Y-BP	Micro Commercial Co	TRANS PNP 30V 0.8A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 600 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Package: -	Request a Quote	800 mA	30 V	700mV @ 20mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	600 mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JANSD2N2222A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	Package: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
BF421-BP	Micro Commercial Co	TRANS PNP 300V 0.1A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 830 mW Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Package: -	Request a Quote	100 mA	300 V	600mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	830 mW	60MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JANKCCG2N3500	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Package: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	10µA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N6328	Microchip Technology	TRANS NPN 100V 30A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 200 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	Package: -	Request a Quote	30 A	100 V	-	-	-	200 W	-	-	Through Hole	TO-204AA, TO-3	TO-3
2SC2712-Y-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SMINI Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock21,147	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200 mW	80MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
NSS60201SMTTBG	onsemi	TRANS NPN 60V 2A 6WDFN Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Power - Max: 1.8 W Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	Package: -	Stock9,000	2 A	60 V	250mV @ 200mA, 2A	100nA (ICBO)	150 @ 100mA, 2V	1.8 W	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTE215	NTE Electronics, Inc	TRANS NPN DARL 100V 8A TO3P Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V Power - Max: 2.5 W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: -	Request a Quote	8 A	100 V	1.5V @ 8mA, 4A	100µA (ICBO)	1500 @ 4A, 3V	2.5 W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
2SD1145F-AE	onsemi	BIP NPN 5A 20V Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 900 mW Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	Package: -	Request a Quote	5 A	20 V	500mV @ 60mA, 3A	1µA (ICBO)	160 @ 500mA, 2V	900 mW	120MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
2SB601-AZ	Renesas	2SB601 - PNP SILICON EPITAXIAL T Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Power - Max: 1.5 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: -	Request a Quote	5 A	100 V	1.5V @ 3mA, 3A	10µA	2000 @ 3A, 2V	1.5 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BCX56-TR	Central Semiconductor Corp	TRANS NPN 80V 1A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.3 W Frequency - Transition: 130MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	Package: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	1.3 W	130MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BCX56-10	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	Package: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89