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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 5A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock288,768 |
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Standard | 30V | 5A | 52 mOhm @ 5A, 10V | 2.4V @ 250µA | 11nC @ 10V | 520pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 8DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (3x3)
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Package: 8-PowerSMD, Flat Leads |
Stock7,360 |
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Logic Level Gate | 20V | - | - | 1V @ 250µA | 22nC @ 4.5V | 2065pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (3x3) |
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IXYS |
MOSFET 2N-CH 75V 150A I4-PAC-5
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock3,504 |
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Standard | 75V | 150A | 4.2 mOhm @ 120A, 10V | 4V @ 1mA | 225nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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Infineon Technologies |
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,240 |
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Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 36A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 36A
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock7,088 |
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Standard | 1000V (1kV) | 36A | 270 mOhm @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock396,420 |
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Logic Level Gate | 30V | 5.7A | 22 mOhm @ 7.5A, 10V | 800mV @ 250µA (Min) | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2N-CH 60V 5.3A DFN8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
- Power - Max: 2.9W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock6,288 |
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Logic Level Gate | 60V | 5.3A | 44 mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 10V | 560pF @ 25V | 2.9W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V V-DFN5045-
- FET Type: 4 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-VDFN Exposed Pad
- Supplier Device Package: V-DFN5045-12
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Package: 12-VDFN Exposed Pad |
Stock5,744 |
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Standard | - | 14.8A (Ta) | 22 mOhm @ 10A, 10V | 3V @ 250µA | 8.4nC @ 4.5V | 864pF @ 30V | - | -55°C ~ 150°C (TJ) | Surface Mount | 12-VDFN Exposed Pad | V-DFN5045-12 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 5A TSMT8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Power - Max: 600mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock7,600 |
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Logic Level Gate | 30V | 5A | 39 mOhm @ 5A, 10V | 2.5V @ 1mA | 19nC @ 10V | 1100pF @ 10V | 600mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
- Power - Max: 1.3W
- Operating Temperature: 150°C (TJ)
- Mounting Type: -
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/ECH8
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Package: 8-SMD, Flat Lead |
Stock6,656 |
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Logic Level Gate, 4V Drive | 30V | 7A | 24 mOhm @ 3.5A, 10V | 2.6V @ 1mA | 11.8nC @ 10V | 710pF @ 10V | 1.3W | 150°C (TJ) | - | 8-SMD, Flat Lead | SOT-28FL/ECH8 |
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ON Semiconductor |
MOSFET 2P-CH 20V 3A EMH8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-EMH
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Package: 8-SMD, Flat Lead |
Stock3,328 |
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Logic Level Gate, 1.8V Drive | 20V | 3A | 85 mOhm @ 3A, 4.5V | - | 4nC @ 4.5V | 320pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
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Nexperia USA Inc. |
MOSFET 2P-CH 20V 2.9A 6HUSON
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 103 mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V
- Power - Max: 515mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020-6
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Package: 6-UDFN Exposed Pad |
Stock3,840 |
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Logic Level Gate | 20V | 2.9A | 103 mOhm @ 1.3A, 4.5V | 950mV @ 250µA | 8.1nC @ 4.5V | 514pF @ 10V | 515mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 |
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Nexperia USA Inc. |
MOSFET 2N-CH 40V 40A LFPAK56D
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
- Power - Max: 64W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock6,208 |
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Standard | 40V | 40A | 6.8 mOhm @ 20A, 10V | 4V @ 1mA | 28.9nC @ 10V | 1947pF @ 25V | 64W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Diodes Incorporated |
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock962,676 |
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Logic Level Gate, 4.5V Drive | 30V | 6.8A, 4.9A | 24 mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | 608pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.23A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,272 |
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Standard | 60V | 230mA | 7.5 Ohm @ 50mA, 5V | 2V @ 250µA | - | 50pF @ 25V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock85,932 |
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Logic Level Gate | 20V | 700mA, 600mA | 300 mOhm @ 700mA, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | 113pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Diodes Incorporated |
MOSFET 2P-CH 30V 3.9A 8SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,060 |
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Logic Level Gate | 30V | 3.9A | 70 mOhm @ 5.3A, 10V | 3V @ 250µA | 11nC @ 10V | 563pF @ 25V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 40V 20A 8TDSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
- Power - Max: 2.3W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: - |
Stock13,440 |
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- | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 38nC @ 10V | 2950pF @ 20V | 2.3W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Nexperia USA Inc. |
MOSFET 2N-CH 100V 21A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
- Power - Max: 53W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock4,470 |
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Logic Level Gate | 100V | 21A (Ta) | 42mOhm @ 5A, 10V | 2.1V @ 1mA | 18.5nC @ 5V | 2152pF @ 25V | 53W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Infineon Technologies |
SIC 2N-CH 1200V AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,401 |
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- | 30V | 5A (Ta) | 51mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 6A 4ALPHADFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: 4-AlphaDFN (1.2x1.2)
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Package: - |
Request a Quote |
|
- | 20V | 6A (Ta) | 36mOhm @ 3A, 4.5V | 1.3V @ 250µA | 5.5nC @ 4.5V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | 4-AlphaDFN (1.2x1.2) |
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Nexperia USA Inc. |
MOSFET 2N-CH 20V 0.8A SOT666
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 330mW (Ta), 1.09W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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Package: - |
Stock11,460 |
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- | 20V | 800mA (Ta) | 380mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | 83pF @ 10V | 330mW (Ta), 1.09W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
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Vishay Siliconix |
MOSFET 2P-CH 12V 1.3A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
- Power - Max: 740mW (Ta), 1.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: - |
Request a Quote |
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- | 12V | 1.14A (Ta), 1.3A (Tc) | 390mOhm @ 1A, 4.5V | 1V @ 250µA | 4.2nC @ 8V | 120pF @ 6V | 740mW (Ta), 1.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 22A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
- Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Request a Quote |
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- | 30V | 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc) | 4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 25nC @ 10V, 150nC @ 10V | 1070pF @ 15V, 5550pF @ 15V | 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) |
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onsemi |
MOSFET 2N-CH 40V 9.8A/27A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
- Power - Max: 3.1W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Request a Quote |
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- | 40V | 9.8A (Ta), 27A (Tc) | 17mOhm @ 7.5A, 10V | 3.5V @ 20µA | 6.3nC @ 10V | 325pF @ 25V | 3.1W (Ta), 23W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT363 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 0.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
- Power - Max: 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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- | 30V | 430mA (Ta) | 1.5Ohm @ 100mA, 4.5V | 0.9V @ 250µA | 0.3nC @ 4.5V | 15.4pF @ 15V | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Harris Corporation |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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