Page 38 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF9362PBF
Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,648
IRF7750GTRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,776
IRF7316TR
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock121,584
PMGD130UN,115
NXP

MOSFET 2N-CH 20V 1.2A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock42,000
SI4542DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,392
SI4276DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,952
SI1972DH-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC-70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock526,224
NTTD1P02R2G
ON Semiconductor

MOSFET 2P-CH 20V 1.45A 8MICRO

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock3,584
APTM50DDA10T3G
Microsemi Corporation

MOSFET 2N-CH 500V 37A SP3

Package: SP3

Stock5,776
SP8M8FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,808
DMC2041UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

Package: 6-UDFN Exposed Pad

Stock3,968
SI1028X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V SC89-6

Package: SOT-563, SOT-666

Stock42,000
ALD310704APCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

Package: 16-DIP (0.300", 7.62mm)

Stock6,064
AO6608
Alpha & Omega Semiconductor Inc.

MOSFET ARRAY N/P-CH 30/20V 6TSOP

Package: SC-74, SOT-457

Stock2,688
ECH8697R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 10A SOT-28

Package: 8-SMD, Flat Lead

Stock4,752,000
FDS89141
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 3.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,046
UPA1952TE-T1-A
Renesas Electronics Corporation

MOSFET 2P-CH 20V 2A SC95

Package: -

Request a Quote
UT6KB5TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 5A HUML2020L8

Package: -

Stock6,954
64-2013PBF
Infineon Technologies

MOSFET

Package: -

Request a Quote
FX205-TL-E-ON
onsemi

MOSFET P-CH

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9362PBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,648	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7750GTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,776	Logic Level Gate	20V	4.7A	30 mOhm @ 4.7A, 4.5V	1.2V @ 250µA	39nC @ 5V	1700pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7316TR	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock121,584	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMGD130UN,115	NXP	MOSFET 2N-CH 20V 1.2A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock42,000	Logic Level Gate	20V	1.2A	145 mOhm @ 1.2A, 4.5V	1V @ 250µA	1.3nC @ 4.5V	83pF @ 10V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SI4542DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,392	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	50nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4276DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 3.6W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,952	Logic Level Gate	30V	8A	15.3 mOhm @ 9.5A, 10V	2.5V @ 250µA	26nC @ 10V	1000pF @ 15V	3.6W, 2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1972DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock526,224	Standard	30V	1.3A	225 mOhm @ 1.3A, 10V	2.8V @ 250µA	2.8nC @ 10V	75pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTTD1P02R2G	ON Semiconductor	MOSFET 2P-CH 20V 1.45A 8MICRO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.45A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock3,584	Logic Level Gate	20V	1.45A	160 mOhm @ 1.45A, 4.5V	1.4V @ 250µA	10nC @ 4.5V	265pF @ 16V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
APTM50DDA10T3G	Microsemi Corporation	MOSFET 2N-CH 500V 37A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V Power - Max: 312W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock5,776	Standard	500V	37A	120 mOhm @ 18.5A, 10V	5V @ 1mA	96nC @ 10V	4367pF @ 25V	312W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SP8M8FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/4.5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,808	Logic Level Gate	30V	6A, 4.5A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC2041UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock3,968	Standard	20V	4.7A, 3.2A	40 mOhm @ 4.2A, 4.5V	1.4V @ 250µA	15nC @ 8V	713pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SI1028X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock42,000	Logic Level Gate	30V	-	650 mOhm @ 500mA, 10V	2.5V @ 250µA	2nC @ 10V	16pF @ 15V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
ALD310704APCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock6,064	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
AO6608	Alpha & Omega Semiconductor Inc.	MOSFET ARRAY N/P-CH 30/20V 6TSOP FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 510pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Package: SC-74, SOT-457	Stock2,688	Standard	30V, 20V	3.4A (Ta), 3.3A (Ta)	60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V	1.5V @ 250µA, 1V @ 250µA	3nC @ 4.5V, 10nC @ 4.5V	235pF @ 15V, 510pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
ECH8697R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 10A SOT-28 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	Package: 8-SMD, Flat Lead	Stock4,752,000	Logic Level Gate, 2.5V Drive	24V	10A	11.6 mOhm @ 5A, 4.5V	-	6nC @ 4.5V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
FDS89141	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,046	Logic Level Gate	100V	3.5A	62 mOhm @ 3.5A, 10V	4V @ 250µA	7.1nC @ 10V	398pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA1952TE-T1-A	Renesas Electronics Corporation	MOSFET 2P-CH 20V 2A SC95 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V Power - Max: 1.15W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-95 Supplier Device Package: SC-95	Package: -	Request a Quote	Logic Level Gate, 1.8V Drive	20V	2A (Ta)	135mOhm @ 1A, 4.5V	1.5V @ 1mA	2.3nC @ 4V	272pF @ 10V	1.15W (Ta)	150°C	Surface Mount	SC-95	SC-95
UT6KB5TCR	Rohm Semiconductor	MOSFET 2N-CH 40V 5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	Package: -	Stock6,954	-	40V	5A (Ta)	48mOhm @ 5A, 10V	2.5V @ 1mA	3.5nC @ 10V	150pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
64-2013PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FX205-TL-E-ON	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDG6303N_G	onsemi	MOSFET 2N-CH 25V 0.5A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	Package: -	Request a Quote	Logic Level Gate	25V	500mA	450mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
BSM300D12P4G101	Rohm Semiconductor	SIC 2N-CH 1200V 291A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 291A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.8V @ 145.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Power - Max: 925W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Stock24	-	1200V (1.2kV)	291A (Tc)	-	4.8V @ 145.6mA	-	30000pF @ 10V	925W (Tc)	175°C (TJ)	Chassis Mount	Module	Module
EFC4601-M-TR	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJL9802_R2_00001	Panjit International Inc.	MOSFET 2N-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	30V	5A (Ta)	48mOhm @ 5A, 10V	2.1V @ 250µA	5.8nC @ 10V	235pF @ 15V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
F415MR12W2M1B76BOMA1	Infineon Technologies	SIC 4N-CH 1200V 75A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V Vgs(th) (Max) @ Id: 5.55V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 5520pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	Package: -	Request a Quote	-	1200V (1.2kV)	75A (Tj)	15mOhm @ 75A, 15V	5.55V @ 30mA	186nC @ 15V	5520pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
DMPH4013SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170TLM23C3AG	Microchip Technology	SIC 4N-CH 1700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120DUM31CTBL1NG	Microchip Technology	SIC 2N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-