Page 8 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AON2801L#A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3A DFN2X2-6L

Package: 6-WDFN Exposed Pad

Stock3,120
FW707-TL-E
ON Semiconductor

MOSFET 2P-CH 30V 8A 8SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock6,948
SI3905DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock156,012
NTHD2102PT1
ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

Package: 8-SMD, Flat Lead

Stock287,424
ALD1102BSAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,736
NTMFD4C87NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

Package: 8-PowerTDFN

Stock2,768
FDMC007N30D
Fairchild/ON Semiconductor

PT8+ TECHNOLOGY 30V DUAL N-CHANN

Package: 8-PowerWDFN

Stock7,376
EFC6602R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

Package: 6-XFBGA

Stock2,080
APTM120H29FG
Microsemi Corporation

MOSFET 4N-CH 1200V 34A SP6

Package: SP6

Stock7,072
AUIRF7103QTR
Infineon Technologies

MOSFET 2N-CH 50V 3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,968
FDMD8560L
Fairchild/ON Semiconductor

MOSFET 2N-CH 46V 22A POWER

Package: 8-PowerWDFN

Stock5,984
SIA913ADJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock3,192,612
DMT3020LFDB-7
Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

Package: 6-UDFN Exposed Pad

Stock26,082
IRF7329TRPBF
Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,936
FDS6930B
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock149,940
DMC2710UVQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

Package: -

Stock8,670
NVMFD5C470NLT1G
onsemi

MOSFET 2N-CH 40V 11A/36A 8DFN

Package: -

Request a Quote
DMP4026LSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 6.5A 8SO

Package: -

Request a Quote
PJT7839_R1_00001
Panjit International Inc.

MOSFET 2P-CH 60V 0.25A SOT363

Package: -

Stock11,532
PJL9801_R2_00001
Panjit International Inc.

MOSFET 2P-CH 30V 5A 8SOP

Package: -

Stock5,988

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON2801L#A	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 3A DFN2X2-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	Package: 6-WDFN Exposed Pad	Stock3,120	Logic Level Gate	20V	3A	120 mOhm @ 3A, 4.5V	1V @ 250µA	6.5nC @ 4.5V	700pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x2)
FW707-TL-E	ON Semiconductor	MOSFET 2P-CH 30V 8A 8SOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.173", 4.40mm Width)	Stock6,948	Logic Level Gate	30V	8A	26 mOhm @ 8A, 10V	-	18nC @ 10V	900pF @ 10V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SI3905DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock156,012	Logic Level Gate	8V	-	125 mOhm @ 2.5A, 4.5V	450mV @ 250µA (Min)	6nC @ 4.5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTHD2102PT1	ON Semiconductor	MOSFET 2P-CH 8V 3.4A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Package: 8-SMD, Flat Lead	Stock287,424	Logic Level Gate	8V	3.4A	58 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	16nC @ 2.5V	715pF @ 6.4V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
ALD1102BSAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8SOIC FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,736	Standard	10.6V	-	-	-	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTMFD4C87NT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	Package: 8-PowerTDFN	Stock2,768	Standard	30V	11.7A, 14.9A	5.4 mOhm @ 30A, 10V	2.2V @ 250µA	22.2nC @ 10V	1252pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
FDMC007N30D	Fairchild/ON Semiconductor	PT8+ TECHNOLOGY 30V DUAL N-CHANN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP (3x3)	Package: 8-PowerWDFN	Stock7,376	Standard	30V	46A	-	3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP (3x3)
EFC6602R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (2.7x1.81)	Package: 6-XFBGA	Stock2,080	Logic Level Gate, 2.5V Drive	-	-	-	-	55nC @ 4.5V	-	2W	150°C (TJ)	Surface Mount	6-XFBGA	6-EFCP (2.7x1.81)
APTM120H29FG	Microsemi Corporation	MOSFET 4N-CH 1200V 34A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock7,072	Standard	1200V (1.2kV)	34A	348 mOhm @ 17A, 10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
AUIRF7103QTR	Infineon Technologies	MOSFET 2N-CH 50V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,968	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	15nC @ 10V	255pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMD8560L	Fairchild/ON Semiconductor	MOSFET 2N-CH 46V 22A POWER FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A, 93A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	Package: 8-PowerWDFN	Stock5,984	Standard	60V	22A, 93A	3.2 mOhm @ 22A, 10V	3V @ 250µA	128nC @ 10V	11130pF @ 30V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
SIA913ADJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock3,192,612	Logic Level Gate	12V	4.5A	61 mOhm @ 3.6A, 4.5V	1V @ 250µA	20nC @ 8V	590pF @ 6V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMT3020LFDB-7	Diodes Incorporated	MOSFET 2N-CHA 30V 7.7A DFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock26,082	Standard	30V	7.7A	20 mOhm @ 9A, 10V	3V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
IRF7329TRPBF	Infineon Technologies	MOSFET 2P-CH 12V 9.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,936	Logic Level Gate	12V	9.2A	17 mOhm @ 9.2A, 4.5V	900mV @ 250µA	57nC @ 4.5V	3450pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6930B	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock149,940	Logic Level Gate	30V	5.5A	38 mOhm @ 5.5A, 10V	3V @ 250µA	3.8nC @ 5V	412pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC2710UVQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 1.1A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 460mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock8,670	-	20V	1.1A (Ta), 800mA (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	460mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NVMFD5C470NLT1G	onsemi	MOSFET 2N-CH 40V 11A/36A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Power - Max: 3W (Ta), 24W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	40V	11A (Ta), 36A (Tc)	11.5mOhm @ 5A, 10V	2.2V @ 20µA	4nC @ 4.5V	590pF @ 25V	3W (Ta), 24W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMP4026LSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 6.5A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2064pF @ 20V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	40V	6.5A (Ta)	25mOhm @ 3A, 10V	1.8V @ 250µA	45.8nC @ 10V	2064pF @ 20V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PJT7839_R1_00001	Panjit International Inc.	MOSFET 2P-CH 60V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock11,532	-	60V	250mA (Ta)	4Ohm @ 500mA, 10V	2.5V @ 250µA	1.1nC @ 4.5V	51pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PJL9801_R2_00001	Panjit International Inc.	MOSFET 2P-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock5,988	-	30V	5A (Ta)	54mOhm @ 5A, 10V	1.3V @ 250µA	9.1nC @ 4.5V	816pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJ500AEP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	Package: -	Stock17,814	-	40V	30A (Tc)	9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V	2.3V @ 250µA, 2.5V @ 250µA	38.3nC @ 10V, 45nC @ 10V	1843pF @ 20V, 1628pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
UPA2752GR-E1-A	Renesas	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.7W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	30V	8A (Tc)	23mOhm @ 4A, 10V	2.5V @ 1mA	10nC @ 10V	480pF @ 10V	1.7W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SP8K33TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170AM45CT1AG	Microchip Technology	SIC 2N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FS10ASJ-3-T13-C02	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJS6602_S2_00001	Panjit International Inc.	MOSFET N/P-CH 20V 5.2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 3.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 10V, 522pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Request a Quote	-	20V	5.2A (Ta), 3.4A (Ta)	36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V	1.2V @ 250µA	4.1nC @ 4.5V, 7nC @ 4.5V	396pF @ 10V, 522pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
FF3MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 375A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	Package: -	Request a Quote	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MSCSM170AM15CT3AG	Microchip Technology	SIC 2N-CH 1700V 181A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 862W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	181A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	862W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-