|
|
Infineon Technologies |
FET RF LDMOS 170W H36248-2
- Transistor Type: LDMOS
- Frequency: 765MHz
- Gain: 18.7dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36248-2
|
Package: 2-Flatpack, Fin Leads |
Stock5,072 |
|
765MHz | 18.7dB | 30V | - | - | 900mA | 150W | 65V | 2-Flatpack, Fin Leads | H-36248-2 |
|
|
Infineon Technologies |
IC FET RF LDMOS 100W H-37248-2
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 16.5dB
- Voltage - Test: 28V
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: 750mA
- Power - Output: 100W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37248-2
|
Package: 2-Flatpack, Fin Leads, Flanged |
Stock7,792 |
|
1.88GHz | 16.5dB | 28V | 1µA | - | 750mA | 100W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37248-2 |
|
|
Infineon Technologies |
FET RF 65V 894MHZ H-36260-2
- Transistor Type: LDMOS
- Frequency: 894MHz
- Gain: 18dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.95A
- Power - Output: 220W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36260-2
|
Package: 2-Flatpack, Fin Leads |
Stock3,488 |
|
894MHz | 18dB | 30V | 10µA | - | 1.95A | 220W | 65V | 2-Flatpack, Fin Leads | H-36260-2 |
|
|
Infineon Technologies |
IC FET RF LDMOS 55W H-37265-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 55W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
|
Package: 2-Flatpack, Fin Leads, Flanged |
Stock7,184 |
|
960MHz | 18.5dB | 28V | 10µA | - | 600mA | 55W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37265-2 |
|
|
NXP |
FET RF 65V 2.17GHZ NI-880
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.4A
- Power - Output: 50W
- Voltage - Rated: 65V
- Package / Case: NI-880
- Supplier Device Package: NI-880
|
Package: NI-880 |
Stock4,352 |
|
2.17GHz | 16dB | 28V | - | - | 1.4A | 50W | 65V | NI-880 | NI-880 |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT502A
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.62A
- Power - Output: 55W
- Voltage - Rated: 65V
- Package / Case: SOT-502A
- Supplier Device Package: LDMOST
|
Package: SOT-502A |
Stock5,328 |
|
2.11GHz ~ 2.17GHz | 18.5dB | 28V | - | - | 1.62A | 55W | 65V | SOT-502A | LDMOST |
|
|
NXP |
MOSFET RF SOT23 TO-236AB
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,720 |
|
- | - | - | - | - | - | - | - | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
NXP |
FET RF 65V 1.81GHZ NI-780
- Transistor Type: LDMOS
- Frequency: 1.81GHz
- Gain: 18.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 72W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
|
Package: NI-780 |
Stock4,320 |
|
1.81GHz | 18.2dB | 28V | - | - | 800mA | 72W | 65V | NI-780 | NI-780 |
|
|
NXP |
FET RF 15V 3.55GHZ
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 11.5dB
- Voltage - Test: 12V
- Current Rating: -
- Noise Figure: -
- Current - Test: 55mA
- Power - Output: 3W
- Voltage - Rated: 15V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
|
Package: PLD-1.5 |
Stock2,480 |
|
3.55GHz | 11.5dB | 12V | - | - | 55mA | 3W | 15V | PLD-1.5 | PLD-1.5 |
|
|
ON Semiconductor |
JFET N-CH 25V 30MA TO92
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 30mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,560 |
|
- | - | - | 30mA | - | - | - | 25V | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
NXP |
MOSFET N-CH 12V 30MA SOT143
- Transistor Type: N-Channel Dual Gate
- Frequency: 200MHz
- Gain: -
- Voltage - Test: 8V
- Current Rating: 30mA
- Noise Figure: 0.6dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 12V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock3,360 |
|
200MHz | - | 8V | 30mA | 0.6dB | 10mA | - | 12V | TO-253-4, TO-253AA | SOT-143B |
|
|
Ampleon USA Inc. |
RF FET LDMOS 75V 12.5DB SOT467C
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 12.5dB
- Voltage - Test: 26V
- Current Rating: 2.2A
- Noise Figure: -
- Current - Test: 85mA
- Power - Output: 10W
- Voltage - Rated: 75V
- Package / Case: SOT467C
- Supplier Device Package: SOT467C
|
Package: SOT467C |
Stock7,840 |
|
2GHz | 12.5dB | 26V | 2.2A | - | 85mA | 10W | 75V | SOT467C | SOT467C |
|
|
NXP |
FET RF 2CH 65V 2.9GHZ NI1230S
- Transistor Type: LDMOS (Dual)
- Frequency: 2.9GHz
- Gain: 13.3dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 320W
- Voltage - Rated: 65V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
|
Package: NI-1230S |
Stock7,408 |
|
2.9GHz | 13.3dB | 30V | - | - | 100mA | 320W | 65V | NI-1230S | NI-1230S |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 17.7DB SOT502B
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 17.7dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 2.4A
- Power - Output: 80W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
|
Package: SOT-502B |
Stock2,432 |
|
2.11GHz ~ 2.17GHz | 17.7dB | 28V | - | - | 2.4A | 80W | 65V | SOT-502B | SOT502B |
|
|
STMicroelectronics |
MOSFET N-CH 80V 18A M-246
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 18dB
- Voltage - Test: 32V
- Current Rating: 18A
- Noise Figure: -
- Current - Test: 400mA
- Power - Output: 150W
- Voltage - Rated: 80V
- Package / Case: M246
- Supplier Device Package: M246
|
Package: M246 |
Stock5,264 |
|
860MHz | 18dB | 32V | 18A | - | 400mA | 150W | 80V | M246 | M246 |
|
|
NXP |
TRANS 960-1215MHZ 1000W PEAK 50V
- Transistor Type: LDMOS (Dual)
- Frequency: 1.4GHz
- Gain: 17.7dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 1000W
- Voltage - Rated: 105V
- Package / Case: SOT-979A
- Supplier Device Package: NI-1230-4H
|
Package: SOT-979A |
Stock7,552 |
|
1.4GHz | 17.7dB | 50V | - | - | 100mA | 1000W | 105V | SOT-979A | NI-1230-4H |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 13DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.7GHz ~ 2.9GHz
- Gain: 13dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 350W
- Voltage - Rated: 65V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
|
Package: SOT539B |
Stock4,624 |
|
2.7GHz ~ 2.9GHz | 13dB | 32V | - | - | 200mA | 350W | 65V | SOT539B | SOT539B |
|
|
M/A-Com Technology Solutions |
FET RF 65V 500MHZ 319-07
- Transistor Type: N-Channel
- Frequency: 30MHz ~ 500MHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: 4A
- Noise Figure: -
- Current - Test: 25mA
- Power - Output: 20W
- Voltage - Rated: 65V
- Package / Case: 319-07
- Supplier Device Package: 319-07, Style 3
|
Package: 319-07 |
Stock5,392 |
|
30MHz ~ 500MHz | 16dB | 28V | 4A | - | 25mA | 20W | 65V | 319-07 | 319-07, Style 3 |
|
|
IXYS |
RF MOSFET N-CHANNEL DE150
- Transistor Type: N-Channel
- Frequency: 100MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 25µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 200W
- Voltage - Rated: 100V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE150
|
Package: 6-SMD, Flat Lead Exposed Pad |
Stock7,536 |
|
100MHz | - | - | 25µA | - | - | 200W | 100V | 6-SMD, Flat Lead Exposed Pad | DE150 |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 19.5DB SOT502B
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 19.5dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.8A
- Power - Output: 60W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
|
Package: SOT-502B |
Stock6,304 |
|
920MHz ~ 960MHz | 19.5dB | 30V | - | - | 1.8A | 60W | 65V | SOT-502B | SOT502B |
|
|
Ampleon USA Inc. |
RF FET LDMOS 100V 15.5DB SOT539A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.03GHz
- Gain: 15.5dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 1000W
- Voltage - Rated: 100V
- Package / Case: SOT539A
- Supplier Device Package: SOT539A
|
Package: SOT539A |
Stock4,128 |
|
1.03GHz | 15.5dB | 50V | - | - | 200mA | 1000W | 100V | SOT539A | SOT539A |
|
|
Microsemi Corporation |
MOSFET RF PWR N-CH 50V 300W M177
- Transistor Type: N-Channel
- Frequency: 150MHz
- Gain: 25dB
- Voltage - Test: 50V
- Current Rating: 2mA
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 300W
- Voltage - Rated: 170V
- Package / Case: M177
- Supplier Device Package: M177
|
Package: M177 |
Stock7,920 |
|
150MHz | 25dB | 50V | 2mA | - | 250mA | 300W | 170V | M177 | M177 |
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 40V DIE
- Transistor Type: HEMT
- Frequency: 18GHz
- Gain: 17dB
- Voltage - Test: 40V
- Current Rating: -
- Noise Figure: -
- Current - Test: 360mA
- Power - Output: 70W
- Voltage - Rated: 100V
- Package / Case: Die
- Supplier Device Package: Die
|
Package: Die |
Stock8,340 |
|
18GHz | 17dB | 40V | - | - | 360mA | 70W | 100V | Die | Die |
|
|
Ampleon USA Inc. |
RF MOSFET GAN HEMT 50V CDFM2
- Transistor Type: GaN HEMT
- Frequency: 3GHz ~ 3.5GHz
- Gain: 13dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 30W
- Voltage - Rated: 150 V
- Package / Case: SOT-1227A
- Supplier Device Package: CDFM2
|
Package: - |
Request a Quote |
|
3GHz ~ 3.5GHz | 13dB | 50 V | - | - | 70 mA | 30W | 150 V | SOT-1227A | CDFM2 |
|
|
Renesas Electronics Corporation |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |
|
|
Ampleon USA Inc. |
RF MOSFET 48V SOT1273-1
- Transistor Type: MOSFET (Metal Oxide)
- Frequency: 1.8GHz ~ 2GHz
- Gain: 14.6dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 350 mA
- Power - Output: 500W
- Voltage - Rated: 150 V
- Package / Case: SOT-1273-1
- Supplier Device Package: SOT1273-1
|
Package: - |
Stock180 |
|
1.8GHz ~ 2GHz | 14.6dB | 48 V | - | - | 350 mA | 500W | 150 V | SOT-1273-1 | SOT1273-1 |
|
|
MACOM Technology Solutions |
RF MOSFET HEMT 50V H-37265J-2
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 350W
- Voltage - Rated: 125 V
- Package / Case: H-37265J-2
- Supplier Device Package: H-37265J-2
|
Package: - |
Stock213 |
|
1.2GHz ~ 1.4GHz | 20dB | 50 V | - | - | 100 mA | 350W | 125 V | H-37265J-2 | H-37265J-2 |
|
|
MACOM Technology Solutions |
RF MOSFET LDMOS 30V H-37248-4
- Transistor Type: LDMOS
- Frequency: 2.4GHz
- Gain: 17dB
- Voltage - Test: 30 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 120 mA
- Power - Output: 110W
- Voltage - Rated: 65 V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
|
Package: - |
Request a Quote |
|
2.4GHz | 17dB | 30 V | - | - | 120 mA | 110W | 65 V | H-37248-4 | H-37248-4 |