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Infineon Technologies |
FET RF LDMOS 60W H37265-2
- Transistor Type: LDMOS
- Frequency: 760MHz
- Gain: 19.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 60W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock5,552 |
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760MHz | 19.5dB | 28V | - | - | 600mA | 60W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37265-2 |
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Infineon Technologies |
IC FET RF LDMOS 100W H-37248-2
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 17dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 44dBm
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37248-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock4,048 |
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1.96GHz | 17dB | 30V | 10µA | - | 900mA | 44dBm | 65V | 2-Flatpack, Fin Leads, Flanged | H-37248-2 |
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NXP |
FET RF 70V 960MHZ NI780H
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19.4dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.6A
- Power - Output: 65W
- Voltage - Rated: 70V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock4,144 |
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960MHz | 19.4dB | 28V | - | - | 1.6A | 65W | 70V | NI-780 | NI-780 |
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NXP |
FET RF 65V 1.96GHZ NI780H
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 19.1dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.1A
- Power - Output: 34W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock7,952 |
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1.96GHz | 19.1dB | 28V | - | - | 1.1A | 34W | 65V | NI-780 | NI-780 |
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NXP |
FET RF 65V 945MHZ TO270-2
- Transistor Type: LDMOS
- Frequency: 945MHz
- Gain: 20dB
- Voltage - Test: 26V
- Current Rating: -
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 30W
- Voltage - Rated: 65V
- Package / Case: TO-270AA
- Supplier Device Package: TO-270-2
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Package: TO-270AA |
Stock7,664 |
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945MHz | 20dB | 26V | - | - | 250mA | 30W | 65V | TO-270AA | TO-270-2 |
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ON Semiconductor |
JFET N-CH 25V 20MA TO92
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 20mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,232 |
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- | - | - | 20mA | - | - | - | 25V | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
FET RF 15V 3.55GHZ 1.5-PLD
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 12V
- Current Rating: -
- Noise Figure: -
- Current - Test: 180mA
- Power - Output: 9W
- Voltage - Rated: 15V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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Package: PLD-1.5 |
Stock5,184 |
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3.55GHz | 10dB | 12V | - | - | 180mA | 9W | 15V | PLD-1.5 | PLD-1.5 |
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Ampleon USA Inc. |
RF FET 2 NC 65V 18DB SOT279A
- Transistor Type: 2 N-Channel (Dual) Common Source
- Frequency: 175MHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: 4.5A
- Noise Figure: -
- Current - Test: 25mA
- Power - Output: 30W
- Voltage - Rated: 65V
- Package / Case: SOT-279A
- Supplier Device Package: CDFM4
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Package: SOT-279A |
Stock7,472 |
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175MHz | 18dB | 28V | 4.5A | - | 25mA | 30W | 65V | SOT-279A | CDFM4 |
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Infineon Technologies |
RF MOSFET TRANSISTORS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,056 |
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- | - | - | - | - | - | - | - | - | - |
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NXP |
FET RF 2CH 120V 450MHZ NI-1230S
- Transistor Type: LDMOS
- Frequency: 450MHz
- Gain: 20dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 1000W
- Voltage - Rated: 120V
- Package / Case: NI-1230S-4
- Supplier Device Package: NI-1230S-4
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Package: NI-1230S-4 |
Stock7,152 |
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450MHz | 20dB | 50V | - | - | 150mA | 1000W | 120V | NI-1230S-4 | NI-1230S-4 |
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NXP |
FET RF 110V 1.03GHZ NI-780H
- Transistor Type: LDMOS
- Frequency: 1.03GHz
- Gain: 19.7dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 500W
- Voltage - Rated: 110V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock4,608 |
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1.03GHz | 19.7dB | 50V | - | - | 200mA | 500W | 110V | NI-780 | NI-780 |
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Ampleon USA Inc. |
BLF898S/SOT539/TRAY
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,568 |
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- | - | - | - | - | - | - | - | - | - |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT502A
- Transistor Type: LDMOS
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 20W
- Voltage - Rated: 65V
- Package / Case: SOT-502A
- Supplier Device Package: SOT502A
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Package: SOT-502A |
Stock6,192 |
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2.3GHz ~ 2.4GHz | 18dB | 28V | - | - | 900mA | 20W | 65V | SOT-502A | SOT502A |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT1244B
- Transistor Type: LDMOS
- Frequency: 2.6GHz ~ 2.7GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.3A
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: SOT-1244B
- Supplier Device Package: CDFM6
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Package: SOT-1244B |
Stock6,896 |
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2.6GHz ~ 2.7GHz | 18dB | 28V | - | - | 1.3A | 45W | 65V | SOT-1244B | CDFM6 |
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NXP |
FET RF 2CH 115V 860MHZ TO272-4
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 22dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 350mA
- Power - Output: 18W
- Voltage - Rated: 115V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
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Package: TO-272BB |
Stock4,080 |
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860MHz | 22dB | 50V | - | - | 350mA | 18W | 115V | TO-272BB | TO-272 WB-4 |
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NXP |
FET RF 65V 2.17GHZ NI-780S
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 22W
- Voltage - Rated: 65V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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Package: NI-780S |
Stock7,408 |
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2.17GHz | 18dB | 28V | - | - | 800mA | 22W | 65V | NI-780S | NI-780S |
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STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10
- Transistor Type: LDMOS
- Frequency: 500MHz
- Gain: 14dB
- Voltage - Test: 12.5V
- Current Rating: 5A
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 15W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10 Exposed Bottom Pad
- Supplier Device Package: PowerSO-10RF (Straight Lead)
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Package: PowerSO-10 Exposed Bottom Pad |
Stock4,016 |
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500MHz | 14dB | 12.5V | 5A | - | 150mA | 15W | 40V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
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STMicroelectronics |
TRANSISTOR RF POWERSO-10
- Transistor Type: LDMOS
- Frequency: 500MHz
- Gain: 17dB
- Voltage - Test: 12.5V
- Current Rating: 4A
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 8W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
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Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Stock17,004 |
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500MHz | 17dB | 12.5V | 4A | - | 150mA | 8W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
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IXYS |
RF MOSFET N-CHANNEL DE275
- Transistor Type: N-Channel
- Frequency: 100MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: 590W
- Voltage - Rated: 200V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE275
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Package: 6-SMD, Flat Lead Exposed Pad |
Stock5,760 |
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100MHz | - | - | 1mA | - | - | 590W | 200V | 6-SMD, Flat Lead Exposed Pad | DE275 |
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Toshiba Semiconductor and Storage |
FET RF 12.5V 800MHZ USQ
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 22dB
- Voltage - Test: 6V
- Current Rating: 30mA
- Noise Figure: 2.5dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 12.5V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
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Package: SC-82A, SOT-343 |
Stock173,580 |
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800MHz | 22dB | 6V | 30mA | 2.5dB | 10mA | - | 12.5V | SC-82A, SOT-343 | USQ |
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NXP |
RF MOSFET HEMT 50V NI400
- Transistor Type: HEMT
- Frequency: 30MHz ~ 2.2GHz
- Gain: 18.4dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 125W
- Voltage - Rated: 150 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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Package: - |
Stock3 |
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30MHz ~ 2.2GHz | 18.4dB | 50 V | - | - | 200 mA | 125W | 150 V | NI-400S-2S | NI-400S-2S |
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NXP |
RF MOSFET 48V 6DFN
- Transistor Type: -
- Frequency: 3.3GHz ~ 3.7GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 15.1W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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Package: - |
Request a Quote |
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3.3GHz ~ 3.7GHz | 15.3dB | 48 V | - | - | 70 mA | 15.1W | 125 V | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) |
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Microchip Technology |
RF MOSFET GAN 50V 55-QQ
- Transistor Type: GaN
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 15.9dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 20 mA
- Power - Output: 58W
- Voltage - Rated: 150 V
- Package / Case: 55-QQ
- Supplier Device Package: 55-QQ
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Package: - |
Request a Quote |
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1.2GHz ~ 1.4GHz | 15.9dB | 50 V | - | - | 20 mA | 58W | 150 V | 55-QQ | 55-QQ |
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NXP |
RF MOSFET LDMOS 28V OM880X-2L2L
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 17.9dB
- Voltage - Test: 28 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 218W
- Voltage - Rated: 65 V
- Package / Case: OM-880X-2L2L
- Supplier Device Package: OM-880X-2L2L
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Package: - |
Request a Quote |
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2.11GHz ~ 2.2GHz | 17.9dB | 28 V | 10µA | - | 1.6 A | 218W | 65 V | OM-880X-2L2L | OM-880X-2L2L |
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WAVEPIA.,Co.Ltd |
RF MOSFET GAN HEMT 28V 360BH
- Transistor Type: GaN HEMT
- Frequency: 6GHz
- Gain: 11.6dB
- Voltage - Test: 28 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 8W
- Voltage - Rated: 160 V
- Package / Case: 360BH
- Supplier Device Package: 360BH
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Package: - |
Stock30 |
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6GHz | 11.6dB | 28 V | - | - | 150 mA | 8W | 160 V | 360BH | 360BH |
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MACOM Technology Solutions |
RF MOSFET HEMT H-37248KC-6
- Transistor Type: HEMT
- Frequency: 3.3GHz ~ 3.8GHz
- Gain: 12.3dB
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: 440W
- Voltage - Rated: 48 V
- Package / Case: H-37248KC-6/2
- Supplier Device Package: H-37248KC-6/2
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Package: - |
Request a Quote |
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3.3GHz ~ 3.8GHz | 12.3dB | - | - | - | - | 440W | 48 V | H-37248KC-6/2 | H-37248KC-6/2 |
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NXP |
RF MOSFET GAN 48V NI780
- Transistor Type: GaN
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: 300W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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Package: - |
Stock276 |
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2.4GHz ~ 2.5GHz | 15.3dB | 48 V | - | - | - | 300W | 125 V | NI-780S-4L | NI-780S-4L |
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NXP |
RF MOSFET GAN 48V 6DFN
- Transistor Type: GaN
- Frequency: 3.3GHz ~ 4.3GHz
- Gain: 16.9dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 12 mA
- Power - Output: 24.5dBm
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (4x4.5)
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Package: - |
Request a Quote |
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3.3GHz ~ 4.3GHz | 16.9dB | 48 V | - | - | 12 mA | 24.5dBm | 125 V | 6-LDFN Exposed Pad | 6-PDFN (4x4.5) |