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Infineon Technologies |
IC FET RF LDMOS 240W H-37260-2
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 16dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.6A
- Power - Output: 50W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37260-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock3,040 |
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1.96GHz | 16dB | 30V | 10µA | - | 1.6A | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37260-2 |
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Infineon Technologies |
IC FET RF LDMOS 120W PG-63248-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 750mA
- Power - Output: 110W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: PG-63248-2
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Package: 2-Flatpack, Fin Leads |
Stock3,088 |
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960MHz | 18.5dB | 28V | 10µA | - | 750mA | 110W | 65V | 2-Flatpack, Fin Leads | PG-63248-2 |
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Infineon Technologies |
IC FET RF LDMOS 150W PG-64248-2
- Transistor Type: LDMOS
- Frequency: 470MHz
- Gain: 21dB
- Voltage - Test: 28V
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: PG-64248-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock3,088 |
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470MHz | 21dB | 28V | 1µA | - | 900mA | 150W | 65V | 2-Flatpack, Fin Leads, Flanged | PG-64248-2 |
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M/A-Com Technology Solutions |
TRANSISTOR GAN 960-1215MHZ 500W
- Transistor Type: HEMT
- Frequency: 960MHz ~ 1.22GHz
- Gain: 19.8dB
- Voltage - Test: 50V
- Current Rating: 27.3A
- Noise Figure: -
- Current - Test: 400mA
- Power - Output: 500W
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,888 |
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960MHz ~ 1.22GHz | 19.8dB | 50V | 27.3A | - | 400mA | 500W | - | - | - |
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NXP |
TRANSISTOR CDFM6
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: SOT-1120B
- Supplier Device Package: CDFM6
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Package: SOT-1120B |
Stock5,632 |
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- | - | - | - | - | - | - | - | SOT-1120B | CDFM6 |
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NXP |
FET RF 70V 920MHZ NI-780
- Transistor Type: LDMOS
- Frequency: 920MHz
- Gain: 19.3dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 72W
- Voltage - Rated: 70V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock4,928 |
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920MHz | 19.3dB | 28V | - | - | 500mA | 72W | 70V | NI-780 | NI-780 |
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NXP |
FET RF 65V 2.17GHZ NI-780S
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.3dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.1A
- Power - Output: 33W
- Voltage - Rated: 65V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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Package: NI-780S |
Stock9,420 |
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2.17GHz | 17.3dB | 28V | - | - | 1.1A | 33W | 65V | NI-780S | NI-780S |
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NXP |
FET RF 68V 2.16GHZ TO270-4
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.16GHz
- Gain: 14.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.05A
- Power - Output: 23W
- Voltage - Rated: 68V
- Package / Case: TO-270-4
- Supplier Device Package: TO-270 WB-4
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Package: TO-270-4 |
Stock3,264 |
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2.11GHz ~ 2.16GHz | 14.5dB | 28V | - | - | 1.05A | 23W | 68V | TO-270-4 | TO-270 WB-4 |
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NXP |
FET RF 68V 2.16GHZ NI-400
- Transistor Type: LDMOS
- Frequency: 2.16GHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 450mA
- Power - Output: 11.5W
- Voltage - Rated: 68V
- Package / Case: NI-400
- Supplier Device Package: NI-400
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Package: NI-400 |
Stock6,400 |
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2.16GHz | 16dB | 28V | - | - | 450mA | 11.5W | 68V | NI-400 | NI-400 |
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NXP |
FET RF 68V 1.99GHZ NI-780S
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 16.1dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 22W
- Voltage - Rated: 68V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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Package: NI-780S |
Stock3,648 |
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1.99GHz | 16.1dB | 28V | - | - | 900mA | 22W | 68V | NI-780S | NI-780S |
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NXP |
FET RF 7V 800MHZ 6TSSOP
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: -
- Voltage - Test: 5V
- Current Rating: 40mA
- Noise Figure: 2dB
- Current - Test: 15mA
- Power - Output: -
- Voltage - Rated: 7V
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,520 |
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800MHz | - | 5V | 40mA | 2dB | 15mA | - | 7V | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,888 |
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- | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
RF MOSFET LDMOS 28V H-36265-2
- Transistor Type: LDMOS
- Frequency: 869MHz ~ 960MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 450mA
- Power - Output: 55W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-36265-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock4,064 |
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869MHz ~ 960MHz | 18.5dB | 28V | 10µA | - | 450mA | 55W | 65V | 2-Flatpack, Fin Leads, Flanged | H-36265-2 |
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NXP |
IC TRANS RF LDMOS
- Transistor Type: LDMOS (Dual)
- Frequency: 1.4GHz
- Gain: 17.7dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 1000W
- Voltage - Rated: 105V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S
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Package: NI-1230-4S |
Stock4,288 |
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1.4GHz | 17.7dB | 50V | - | - | 100mA | 1000W | 105V | NI-1230-4S | NI-1230-4S |
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NXP |
FET RF 70V 960MHZ NI-880HS
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.6dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.7A
- Power - Output: 75W
- Voltage - Rated: 70V
- Package / Case: NI-880S
- Supplier Device Package: NI-880S
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Package: NI-880S |
Stock35,520 |
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960MHz | 18.6dB | 28V | - | - | 1.7A | 75W | 70V | NI-880S | NI-880S |
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Ampleon USA Inc. |
RF FET LDMOS 100V 15.5DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.03GHz
- Gain: 15.5dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 1000W
- Voltage - Rated: 100V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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Package: SOT539B |
Stock5,408 |
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1.03GHz | 15.5dB | 50V | - | - | 200mA | 1000W | 100V | SOT539B | SOT539B |
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NXP |
FET RF 2CH 133V 230MHZ TO270
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 27dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 300W
- Voltage - Rated: 133V
- Package / Case: TO-270-4
- Supplier Device Package: TO-270 WB-4
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Package: TO-270-4 |
Stock3,568 |
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230MHz | 27dB | 50V | - | - | 100mA | 300W | 133V | TO-270-4 | TO-270 WB-4 |
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Ampleon USA Inc. |
RF FET LDMOS 104V 21DB SOT539B
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 21dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.3A
- Power - Output: 250W
- Voltage - Rated: 104V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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Package: SOT539B |
Stock5,472 |
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860MHz | 21dB | 50V | - | - | 1.3A | 250W | 104V | SOT539B | SOT539B |
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Infineon Technologies |
MOSFET N-CH 8V 40MA SOT-143
- Transistor Type: N-Channel
- Frequency: 800MHz
- Gain: 23dB
- Voltage - Test: 5V
- Current Rating: 40mA
- Noise Figure: 1.6dB
- Current - Test: 15mA
- Power - Output: -
- Voltage - Rated: 8V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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Package: TO-253-4, TO-253AA |
Stock152,862 |
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800MHz | 23dB | 5V | 40mA | 1.6dB | 15mA | - | 8V | TO-253-4, TO-253AA | PG-SOT143-4 |
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Microchip Technology |
RF MOSFET HEMT 50V 24QFN
- Transistor Type: HEMT
- Frequency: -
- Gain: 18.6dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 19W
- Voltage - Rated: 125 V
- Package / Case: 24-TFQFN Exposed Pad
- Supplier Device Package: 24-QFN (4x4)
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Package: - |
Request a Quote |
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- | 18.6dB | 50 V | - | - | 40 mA | 19W | 125 V | 24-TFQFN Exposed Pad | 24-QFN (4x4) |
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Ampleon USA Inc. |
RF MOSFET LDMOS 28V SOT1271-2
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 19.3dB
- Voltage - Test: 28 V
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 250W
- Voltage - Rated: 65 V
- Package / Case: SOT-1271-2
- Supplier Device Package: SOT1271-2
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Package: - |
Request a Quote |
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1.93GHz ~ 1.99GHz | 19.3dB | 28 V | 1.4µA | - | 1.4 A | 250W | 65 V | SOT-1271-2 | SOT1271-2 |
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Toshiba Semiconductor and Storage |
RF MOSFET 6V PW-MINI
- Transistor Type: MOSFET (Metal Oxide)
- Frequency: 470MHz
- Gain: 13.3dB
- Voltage - Test: 6 V
- Current Rating: 2A
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 4.3W
- Voltage - Rated: 16 V
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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Package: - |
Request a Quote |
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470MHz | 13.3dB | 6 V | 2A | - | 500 mA | 4.3W | 16 V | TO-243AA | PW-MINI |
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STMicroelectronics |
RF MOSFET LDMOS B2
- Transistor Type: LDMOS
- Frequency: 2.3GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: -
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 180W
- Voltage - Rated: 65 V
- Package / Case: B2
- Supplier Device Package: B2
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Package: - |
Request a Quote |
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2.3GHz ~ 2.5GHz | 15.3dB | - | 1µA | - | - | 180W | 65 V | B2 | B2 |
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NXP |
RF MOSFET GAN 48V 6DFN
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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Package: - |
Stock9 |
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100MHz ~ 2.69GHz | 13.9dB | 48 V | - | - | 40 mA | 8W | 125 V | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) |
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Microchip Technology |
RF MOSFET HEMT 50V 55-KR
- Transistor Type: HEMT
- Frequency: 960MHz ~ 1.215GHz
- Gain: 18dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 650W
- Voltage - Rated: 150 V
- Package / Case: 55-KR
- Supplier Device Package: 55-KR
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Package: - |
Request a Quote |
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960MHz ~ 1.215GHz | 18dB | 50 V | - | - | 100 mA | 650W | 150 V | 55-KR | 55-KR |
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Ampleon USA Inc. |
RF MOSFET LDMOS 30V DFM6
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 15dB
- Voltage - Test: 30 V
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 300W
- Voltage - Rated: 65 V
- Package / Case: SOT-1275-1
- Supplier Device Package: DFM6
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Package: - |
Request a Quote |
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2.11GHz ~ 2.17GHz | 15dB | 30 V | 1.4µA | - | 1.1 A | 300W | 65 V | SOT-1275-1 | DFM6 |
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NXP |
RF MOSFET TO247
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-37248-4
- Transistor Type: LDMOS
- Frequency: 2.02GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 20W
- Voltage - Rated: 65 V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
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Package: - |
Request a Quote |
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2.02GHz | 16dB | 28 V | - | - | 500 mA | 20W | 65 V | H-37248-4 | H-37248-4 |