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Infineon Technologies |
IC RF FET LDMOS 190W H-49248H-4
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14.8dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 520mA
- Power - Output: 29W
- Voltage - Rated: 65V
- Package / Case: H-49248H-4
- Supplier Device Package: H-49248H-4
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Package: H-49248H-4 |
Stock3,136 |
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1.805GHz ~ 1.88GHz | 14.8dB | 28V | 10µA | - | 520mA | 29W | 65V | H-49248H-4 | H-49248H-4 |
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M/A-Com Technology Solutions |
TRANSISTOR GAN 3.5GHZ 15W
- Transistor Type: HEMT
- Frequency: 0Hz ~ 3GHz
- Gain: 15.5dB
- Voltage - Test: 50V
- Current Rating: 800mA
- Noise Figure: -
- Current - Test: 15mA
- Power - Output: 500mW
- Voltage - Rated: 65V
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,648 |
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0Hz ~ 3GHz | 15.5dB | 50V | 800mA | - | 15mA | 500mW | 65V | - | - |
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NXP |
TRANS PWR LDMOS SOT502
- Transistor Type: LDMOS
- Frequency: 2.5GHz ~ 2.7GHz
- Gain: 17dB
- Voltage - Test: 28V
- Current Rating: 29A
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 14W
- Voltage - Rated: 65V
- Package / Case: SOT-502A
- Supplier Device Package: LDMOST
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Package: SOT-502A |
Stock4,128 |
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2.5GHz ~ 2.7GHz | 17dB | 28V | 29A | - | 900mA | 14W | 65V | SOT-502A | LDMOST |
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NXP |
FET RF 65V 2.17GHZ NI-360
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 13.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 10W
- Voltage - Rated: 65V
- Package / Case: NI-360
- Supplier Device Package: NI-360
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Package: NI-360 |
Stock4,944 |
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2.11GHz ~ 2.17GHz | 13.5dB | 28V | - | - | 100mA | 10W | 65V | NI-360 | NI-360 |
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NXP |
FET RF 65V 1.99GHZ NI-780
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 13.9dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1A
- Power - Output: 22W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock6,128 |
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1.93GHz ~ 1.99GHz | 13.9dB | 28V | - | - | 1A | 22W | 65V | NI-780 | NI-780 |
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NXP |
MOSFET N-CH DUAL GATE 6V SOT143B
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 30dB
- Voltage - Test: 5V
- Current Rating: 30mA
- Noise Figure: 0.9dB
- Current - Test: 12mA
- Power - Output: -
- Voltage - Rated: 6V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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Package: TO-253-4, TO-253AA |
Stock3,456 |
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400MHz | 30dB | 5V | 30mA | 0.9dB | 12mA | - | 6V | TO-253-4, TO-253AA | SOT-143B |
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NXP |
FET RF 10V 800MHZ 6TSSOP
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 26dB
- Voltage - Test: 5V
- Current Rating: 30mA
- Noise Figure: 1.2dB
- Current - Test: 12mA
- Power - Output: -
- Voltage - Rated: 10V
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,480 |
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800MHz | 26dB | 5V | 30mA | 1.2dB | 12mA | - | 10V | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Infineon Technologies |
GAN SIC
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,904 |
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- | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
FET RF LDMOS 10W SON10
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 16.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 9.3W
- Voltage - Rated: 65V
- Package / Case: 10-LDFN Exposed Pad
- Supplier Device Package: PG-SON-10
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Package: 10-LDFN Exposed Pad |
Stock2,416 |
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2.14GHz | 16.2dB | 28V | - | - | 150mA | 9.3W | 65V | 10-LDFN Exposed Pad | PG-SON-10 |
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NXP |
TRANS RF LDMOS 1250W 50V
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 23dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 1250W
- Voltage - Rated: 133V
- Package / Case: OM-1230G-4L
- Supplier Device Package: OM-1230G-4L
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Package: OM-1230G-4L |
Stock4,624 |
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230MHz | 23dB | 50V | - | - | 100mA | 1250W | 133V | OM-1230G-4L | OM-1230G-4L |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 65A
- Noise Figure: -
- Current - Test: 1.9A
- Power - Output: 70W
- Voltage - Rated: 65V
- Package / Case: SOT539B
- Supplier Device Package: CDFM4
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Package: SOT539B |
Stock7,840 |
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2.11GHz ~ 2.17GHz | 18.5dB | 28V | 65A | - | 1.9A | 70W | 65V | SOT539B | CDFM4 |
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Microsemi Corporation |
RF MOSFET N-CHANNEL 50V M113
- Transistor Type: N-Channel
- Frequency: 175MHz
- Gain: 16dB
- Voltage - Test: 50V
- Current Rating: 100µA
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 30W
- Voltage - Rated: 170V
- Package / Case: M113
- Supplier Device Package: M113
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Package: M113 |
Stock6,992 |
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175MHz | 16dB | 50V | 100µA | - | 100mA | 30W | 170V | M113 | M113 |
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Ampleon USA Inc. |
BLP10H690PG/SOT1224/REELDP
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,720 |
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- | - | - | - | - | - | - | - | - | - |
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NXP |
FET RF 2CH 65V 2.69GHZ NI780-4
- Transistor Type: LDMOS
- Frequency: 2.69GHz
- Gain: 14.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 9W
- Voltage - Rated: 65V
- Package / Case: NI-780S-4L4L-8
- Supplier Device Package: NI-780S-4L4L-8
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Package: NI-780S-4L4L-8 |
Stock3,296 |
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2.69GHz | 14.2dB | 28V | - | - | 100mA | 9W | 65V | NI-780S-4L4L-8 | NI-780S-4L4L-8 |
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Ampleon USA Inc. |
BLP10H630P/SOT1223/REELDP
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,808 |
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NXP |
FET RF 68V 960MHZ
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 125mA
- Power - Output: 10W
- Voltage - Rated: 68V
- Package / Case: TO-270-2 Gull Wing
- Supplier Device Package: TO-270-2 GULL
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Package: TO-270-2 Gull Wing |
Stock5,424 |
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960MHz | 18dB | 28V | - | - | 125mA | 10W | 68V | TO-270-2 Gull Wing | TO-270-2 GULL |
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STMicroelectronics |
FET RF 40V 870MHZ
- Transistor Type: LDMOS
- Frequency: 870MHz
- Gain: 16.3dB
- Voltage - Test: 7.5V
- Current Rating: 8A
- Noise Figure: -
- Current - Test: 300mA
- Power - Output: 2W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
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Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Stock6,576 |
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870MHz | 16.3dB | 7.5V | 8A | - | 300mA | 2W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
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Ampleon USA Inc. |
RF FET LDMOS 135V 27DB SOT12232
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 108MHz
- Gain: 27dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 350W
- Voltage - Rated: 135V
- Package / Case: SOT-1223-2
- Supplier Device Package: 4-HSOPF
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Package: SOT-1223-2 |
Stock5,840 |
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108MHz | 27dB | 50V | - | - | 100mA | 350W | 135V | SOT-1223-2 | 4-HSOPF |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT502B
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating: 18A
- Noise Figure: -
- Current - Test: 550mA
- Power - Output: 29.5W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock6,128 |
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1.93GHz ~ 1.99GHz | 19dB | 28V | 18A | - | 550mA | 29.5W | 65V | SOT-502B | SOT502B |
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STMicroelectronics |
TRANS RF PWR N-CH POWERSO-10RF
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6V
- Current Rating: 7A
- Noise Figure: -
- Current - Test: 350mA
- Power - Output: 15W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
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Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Stock9,180 |
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2GHz | 11dB | 13.6V | 7A | - | 350mA | 15W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
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Cree/Wolfspeed |
FET RF 84V 2.5GHZ 440199
- Transistor Type: HEMT
- Frequency: 0Hz ~ 2.5GHz
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating: 56A
- Noise Figure: -
- Current - Test: 2A
- Power - Output: 220W
- Voltage - Rated: 84V
- Package / Case: 440199
- Supplier Device Package: 440199
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Package: 440199 |
Stock6,204 |
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0Hz ~ 2.5GHz | 19dB | 28V | 56A | - | 2A | 220W | 84V | 440199 | 440199 |
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NXP |
FET RF 100V 1.03GHZ NI-780
- Transistor Type: LDMOS
- Frequency: 1.03GHz
- Gain: 20.3dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 275W
- Voltage - Rated: 100V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock6,368 |
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1.03GHz | 20.3dB | 50V | - | - | 100mA | 275W | 100V | NI-780 | NI-780 |
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Ampleon USA Inc. |
RF FET LDMOS 110V 27.5DB SOT467C
- Transistor Type: LDMOS
- Frequency: 225MHz
- Gain: 27.5dB
- Voltage - Test: 50V
- Current Rating: 3.6A
- Noise Figure: -
- Current - Test: 50mA
- Power - Output: 20W
- Voltage - Rated: 110V
- Package / Case: SOT467C
- Supplier Device Package: SOT467C
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Package: SOT467C |
Stock6,736 |
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225MHz | 27.5dB | 50V | 3.6A | - | 50mA | 20W | 110V | SOT467C | SOT467C |
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MACOM Technology Solutions |
RF MOSFET LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Ampleon USA Inc. |
RF MOSFET LDMOS 50V SOT1482-1
- Transistor Type: LDMOS
- Frequency: 400MHz ~ 860MHz
- Gain: 20.2dB
- Voltage - Test: 50 V
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 30W
- Voltage - Rated: 108 V
- Package / Case: SOT-1482-1
- Supplier Device Package: SOT-1482-1
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Package: - |
Request a Quote |
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400MHz ~ 860MHz | 20.2dB | 50 V | 1.4µA | - | 100 mA | 30W | 108 V | SOT-1482-1 | SOT-1482-1 |
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Renesas Electronics Corporation |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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WAVEPIA.,Co.Ltd |
RF MOSFET GAN HEMT 28V DIE
- Transistor Type: GaN HEMT
- Frequency: 15GHz
- Gain: 10dB
- Voltage - Test: 28 V
- Current Rating: 880mA
- Noise Figure: -
- Current - Test: 300 mA
- Power - Output: 15W
- Voltage - Rated: 28 V
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Stock90 |
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15GHz | 10dB | 28 V | 880mA | - | 300 mA | 15W | 28 V | Die | Die |
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MACOM Technology Solutions |
RF MOSFET LDMOS 30V H-33288-6
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 19dB
- Voltage - Test: 30 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.85 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: H-33288-6
- Supplier Device Package: H-33288-6
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Package: - |
Request a Quote |
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1.88GHz | 19dB | 30 V | - | - | 1.85 A | 50W | 65 V | H-33288-6 | H-33288-6 |