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Infineon Technologies |
IC RF FET LDMOS H-36260-2
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,096 |
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- | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC RF POWER TRANSISTOR
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15.9dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.8A
- Power - Output: 50W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-33288-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock2,528 |
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1.99GHz | 15.9dB | 30V | - | - | 1.8A | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-33288-2 |
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Infineon Technologies |
FET RF LDMOS 150W H36248-2
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 18dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.2A
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36248-2
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Package: 2-Flatpack, Fin Leads |
Stock4,032 |
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1.99GHz | 18dB | 30V | - | - | 1.2A | 150W | 65V | 2-Flatpack, Fin Leads | H-36248-2 |
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Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.85A
- Power - Output: 220W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37260-2
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Package: 2-Flatpack, Fin Leads, Flanged |
Stock4,928 |
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960MHz | 18.5dB | 30V | 10µA | - | 1.85A | 220W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37260-2 |
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NXP |
TRANS RF 240W 65V LDMOS SOT1252
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 15dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 800mA
- Power - Output: 63W
- Voltage - Rated: 65V
- Package / Case: SOT-1252-1
- Supplier Device Package: SOT1252-1
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Package: SOT-1252-1 |
Stock4,096 |
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2.3GHz ~ 2.4GHz | 15dB | 30V | - | - | 800mA | 63W | 65V | SOT-1252-1 | SOT1252-1 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 17.2DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.74A
- Power - Output: 60W
- Voltage - Rated: 65V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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Package: SOT539B |
Stock3,136 |
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2.3GHz ~ 2.4GHz | 17.2dB | 28V | - | - | 1.74A | 60W | 65V | SOT539B | SOT539B |
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NXP |
FET RF 2CH 70V 820MHZ NI1230S
- Transistor Type: LDMOS (Dual)
- Frequency: 820MHz
- Gain: 20.9dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 2A
- Power - Output: 96W
- Voltage - Rated: 70V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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Package: NI-1230S |
Stock2,192 |
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820MHz | 20.9dB | 28V | - | - | 2A | 96W | 70V | NI-1230S | NI-1230S |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT1121A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: 32.5A
- Noise Figure: -
- Current - Test: 1.08A
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: SOT-1121A
- Supplier Device Package: LDMOST
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Package: SOT-1121A |
Stock3,376 |
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1.93GHz ~ 1.99GHz | 18dB | 28V | 32.5A | - | 1.08A | 45W | 65V | SOT-1121A | LDMOST |
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NXP |
FET RF 15V 3.55GHZ 1.5-PLD
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 11.5dB
- Voltage - Test: 12V
- Current Rating: -
- Noise Figure: -
- Current - Test: 55mA
- Power - Output: 3W
- Voltage - Rated: 15V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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Package: PLD-1.5 |
Stock4,592 |
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3.55GHz | 11.5dB | 12V | - | - | 55mA | 3W | 15V | PLD-1.5 | PLD-1.5 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V TO92
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,392 |
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- | - | - | - | - | - | - | 25V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 30MA TO92
- Transistor Type: N-Channel JFET
- Frequency: 450MHz
- Gain: 12dB
- Voltage - Test: 10V
- Current Rating: 30mA
- Noise Figure: 3dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,864 |
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450MHz | 12dB | 10V | 30mA | 3dB | 10mA | - | 25V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 21DB SOT502B
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 21dB
- Voltage - Test: 28V
- Current Rating: 32A
- Noise Figure: -
- Current - Test: 950mA
- Power - Output: 26.5W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock2,640 |
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871.5MHz ~ 891.5MHz | 21dB | 28V | 32A | - | 950mA | 26.5W | 65V | SOT-502B | SOT502B |
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Ampleon USA Inc. |
RF FET LDMOS 65V 21DB SOT502B
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 21dB
- Voltage - Test: 28V
- Current Rating: 32A
- Noise Figure: -
- Current - Test: 950mA
- Power - Output: 26.5W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock4,672 |
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871.5MHz ~ 891.5MHz | 21dB | 28V | 32A | - | 950mA | 26.5W | 65V | SOT-502B | SOT502B |
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NXP |
MOSFET 2N-CH 10V 30MA SOT143R
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 30.5dB
- Voltage - Test: 5V
- Current Rating: 30mA
- Noise Figure: 0.9dB
- Current - Test: 12mA
- Power - Output: 200mW
- Voltage - Rated: 10V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143R
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Package: TO-253-4, TO-253AA |
Stock5,104 |
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400MHz | 30.5dB | 5V | 30mA | 0.9dB | 12mA | 200mW | 10V | TO-253-4, TO-253AA | SOT-143R |
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NXP |
FET RF 65V 2.4GHZ NI780S-2
- Transistor Type: LDMOS
- Frequency: 2.4GHz
- Gain: 17.9dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.1A
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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Package: NI-780S |
Stock7,792 |
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2.4GHz | 17.9dB | 28V | - | - | 1.1A | 45W | 65V | NI-780S | NI-780S |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT975B
- Transistor Type: LDMOS
- Frequency: 2.45GHz
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 10mA
- Power - Output: 12W
- Voltage - Rated: 65V
- Package / Case: SOT-975B
- Supplier Device Package: CDFM2
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Package: SOT-975B |
Stock2,912 |
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2.45GHz | 19dB | 28V | - | - | 10mA | 12W | 65V | SOT-975B | CDFM2 |
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STMicroelectronics |
RF MOSFET LDMOS 28V M250
- Transistor Type: LDMOS
- Frequency: 945MHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: 400mA
- Power - Output: 70W
- Voltage - Rated: 80V
- Package / Case: M250
- Supplier Device Package: M250
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Package: M250 |
Stock4,640 |
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945MHz | 16dB | 28V | 1µA | - | 400mA | 70W | 80V | M250 | M250 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 17.4DB SOT502B
- Transistor Type: LDMOS
- Frequency: 2.62GHz ~ 2.69GHz
- Gain: 17.4dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.3A
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock5,568 |
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2.62GHz ~ 2.69GHz | 17.4dB | 32V | - | - | 1.3A | 45W | 65V | SOT-502B | SOT502B |
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Ampleon USA Inc. |
RF FET LDMOS 65V 18DB 16VDFN
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 55mA
- Power - Output: 750mW
- Voltage - Rated: 65V
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-HVSON (4x6)
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Package: 16-VDFN Exposed Pad |
Stock6,832 |
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2.14GHz | 18dB | 28V | - | - | 55mA | 750mW | 65V | 16-VDFN Exposed Pad | 16-HVSON (4x6) |
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Ampleon USA Inc. |
RF FET LDMOS 135V 28DB SOT1121A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 108MHz
- Gain: 28dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 350W
- Voltage - Rated: 135V
- Package / Case: SOT-1121A
- Supplier Device Package: CDFM4
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Package: SOT-1121A |
Stock6,516 |
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108MHz | 28dB | 50V | - | - | 100mA | 350W | 135V | SOT-1121A | CDFM4 |
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NXP |
FET RF 40V 520MHZ PLD-1.5
- Transistor Type: LDMOS
- Frequency: 520MHz
- Gain: 13dB
- Voltage - Test: 12.5V
- Current Rating: 4A
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 8W
- Voltage - Rated: 40V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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Package: PLD-1.5 |
Stock13,452 |
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520MHz | 13dB | 12.5V | 4A | - | 150mA | 8W | 40V | PLD-1.5 | PLD-1.5 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- Transistor Type: LDMOS
- Frequency: 1.8GHz
- Gain: 16dB
- Voltage - Test: 4.8 V
- Current Rating: 100nA
- Noise Figure: -
- Current - Test: 300 mA
- Power - Output: 2W
- Voltage - Rated: 20 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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Package: - |
Request a Quote |
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1.8GHz | 16dB | 4.8 V | 100nA | - | 300 mA | 2W | 20 V | 4-SMD, Flat Leads | 79A |
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Ampleon USA Inc. |
RF MOSFET 50V DFM6
- Transistor Type: MOSFET (Metal Oxide)
- Frequency: 2.3GHz ~ 2.7GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 400W
- Voltage - Rated: 150 V
- Package / Case: SOT-1275-1
- Supplier Device Package: DFM6
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Package: - |
Stock84 |
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2.3GHz ~ 2.7GHz | 15dB | 50 V | - | - | 200 mA | 400W | 150 V | SOT-1275-1 | DFM6 |
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NXP |
RF MOSFET 48V 6DFN
- Transistor Type: -
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.9dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 60 mA
- Power - Output: 13.8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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Package: - |
Request a Quote |
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2.3GHz ~ 2.4GHz | 17.9dB | 48 V | - | - | 60 mA | 13.8W | 125 V | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) |
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NXP |
RF MOSFET GAN 48V 6DFN
- Transistor Type: GaN
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 17.7dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 15W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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Package: - |
Request a Quote |
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2.496GHz ~ 2.69GHz | 17.7dB | 48 V | - | - | 50 mA | 15W | 125 V | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) |
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Ampleon USA Inc. |
RF MOSFET LDMOS 32V 20QFN
- Transistor Type: LDMOS
- Frequency: 2.3GHz ~ 2.7GHz
- Gain: 30dB
- Voltage - Test: 32 V
- Current Rating: 1.4µA
- Noise Figure: -
- Current - Test: 49 mA
- Power - Output: -
- Voltage - Rated: 65 V
- Package / Case: 20-QFN Exposed Pad
- Supplier Device Package: 20-PQFN (8x8)
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Package: - |
Stock1,419 |
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2.3GHz ~ 2.7GHz | 30dB | 32 V | 1.4µA | - | 49 mA | - | 65 V | 20-QFN Exposed Pad | 20-PQFN (8x8) |
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MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-37275G-6
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 720 mA
- Power - Output: 130W
- Voltage - Rated: 65 V
- Package / Case: H-37275G-6/2
- Supplier Device Package: H-37275G-6/2
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Package: - |
Request a Quote |
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1.805GHz ~ 1.88GHz | 14dB | 28 V | 10µA | - | 720 mA | 130W | 65 V | H-37275G-6/2 | H-37275G-6/2 |
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Broadcom Limited |
RF MOSFET E-PHEMT 2V 0402
- Transistor Type: E-pHEMT
- Frequency: 12GHz
- Gain: 11dB
- Voltage - Test: 2 V
- Current Rating: 50mA
- Noise Figure: 1dB
- Current - Test: 20 mA
- Power - Output: 8dBm
- Voltage - Rated: 5 V
- Package / Case: 0402 (1005 Metric)
- Supplier Device Package: 0402
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Package: - |
Request a Quote |
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12GHz | 11dB | 2 V | 50mA | 1dB | 20 mA | 8dBm | 5 V | 0402 (1005 Metric) | 0402 |