Page 95 - Transistors - FETs, MOSFETs - RF | Discrete Semiconductor Products

PTFB260605ELV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS

Package: -

Stock2,768
PTFB082817FHV1XWSA1
Infineon Technologies

IC FET RF LDMOS H-34288

Package: 2-Flatpack, Fin Leads, Flanged

Stock5,424
PTFA240451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

Package: 2-Flatpack, Fin Leads

Stock7,840
BF244A_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,896
MRF7S19170HR3
NXP

FET RF 65V 1.99GHZ NI-880

Package: NI-880

Stock7,008
MRF6S9045MBR1
NXP

FET RF 68V 880MHZ TO-272-2

Package: TO-272-2

Stock5,152
MRF6S19060NR1
NXP

FET RF 68V 1.93GHZ TO270-4

Package: TO-270AB

Stock5,248
MRF5S9150HSR5
NXP

FET RF 68V 880MHZ NI-780S

Package: NI-780S

Stock7,632
BF1100,215
NXP

MOSFET N-CH 14V 30MA SOT143

Package: TO-253-4, TO-253AA

Stock3,568
BF886H6327XTSA1
Infineon Technologies

MOSFET N-CH RF 12V 30MA SOT-343

Package: -

Stock7,648
BLF184XRGQ
Ampleon USA Inc.

RF FET LDMOS 135V 23DB SOT1214C

Package: SOT-1214C

Stock6,336
BLF8G10LS-270V,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1244B

Package: SOT-1244B

Stock4,752
AFT09MP055NR1
NXP

FET RF 2CH 40V 870MHZ TO-270

Package: TO-270AB

Stock7,360
PD85006TR-E
STMicroelectronics

FET RF 40V 870MHZ POWERSO-10RF

Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Stock7,024
ATF-541M4-BLK
Broadcom Limited

IC ENHANCED MOD SUDIOMORPHIC HEM

Package: 0505 (1412 Metric)

Stock4,720
BLF888DU
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539A

Package: SOT539A

Stock5,728
BLP25M710Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

Package: 12-VDFN Exposed Pad

Stock3,600
MRF6V2010NR1
NXP

FET RF 110V 220MHZ TO270-2

Package: TO-270AA

Stock5,856
BLP7G22-10Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

Package: 12-VDFN Exposed Pad

Stock2,576
BLP8G27-5Z
Ampleon USA Inc.

RF FET LDMOS 65V 18DB 16VDFN

Package: 16-VDFN Exposed Pad

Stock4,800

Part Number	Manufacturer	Description	Package	Stock	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
PTFB260605ELV1R250XTMA1	Infineon Technologies	IC FET RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	Package: -	Stock2,768	-	-	-	-	-	-	-	-	-	-
PTFB082817FHV1XWSA1	Infineon Technologies	IC FET RF LDMOS H-34288 Transistor Type: LDMOS Frequency: 821MHz Gain: 19.3dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 2.15A Power - Output: 60W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-34288-2	Package: 2-Flatpack, Fin Leads, Flanged	Stock5,424	821MHz	19.3dB	28V	-	-	2.15A	60W	65V	2-Flatpack, Fin Leads, Flanged	H-34288-2
PTFA240451E V1	Infineon Technologies	IC FET RF LDMOS 45W H-30265-2 Transistor Type: LDMOS Frequency: 2.48GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10µA Noise Figure: - Current - Test: 450mA Power - Output: 45W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-30265-2	Package: 2-Flatpack, Fin Leads	Stock7,840	2.48GHz	14dB	28V	10µA	-	450mA	45W	65V	2-Flatpack, Fin Leads	H-30265-2
BF244A_J35Z	Fairchild/ON Semiconductor	JFET N-CH 30V 50MA TO92 Transistor Type: N-Channel JFET Frequency: 100MHz Gain: - Voltage - Test: 15V Current Rating: 50mA Noise Figure: 1.5dB Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,896	100MHz	-	15V	50mA	1.5dB	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MRF7S19170HR3	NXP	FET RF 65V 1.99GHZ NI-880 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 17.2dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.4A Power - Output: 50W Voltage - Rated: 65V Package / Case: NI-880 Supplier Device Package: NI-880	Package: NI-880	Stock7,008	1.99GHz	17.2dB	28V	-	-	1.4A	50W	65V	NI-880	NI-880
MRF6S9045MBR1	NXP	FET RF 68V 880MHZ TO-272-2 Transistor Type: LDMOS Frequency: 880MHz Gain: 22.7dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 350mA Power - Output: 10W Voltage - Rated: 68V Package / Case: TO-272-2 Supplier Device Package: TO-272-2	Package: TO-272-2	Stock5,152	880MHz	22.7dB	28V	-	-	350mA	10W	68V	TO-272-2	TO-272-2
MRF6S19060NR1	NXP	FET RF 68V 1.93GHZ TO270-4 Transistor Type: LDMOS Frequency: 1.93GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 610mA Power - Output: 12W Voltage - Rated: 68V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	Package: TO-270AB	Stock5,248	1.93GHz	16dB	28V	-	-	610mA	12W	68V	TO-270AB	TO-270 WB-4
MRF5S9150HSR5	NXP	FET RF 68V 880MHZ NI-780S Transistor Type: LDMOS Frequency: 880MHz Gain: 19.7dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.5A Power - Output: 33W Voltage - Rated: 68V Package / Case: NI-780S Supplier Device Package: NI-780S	Package: NI-780S	Stock7,632	880MHz	19.7dB	28V	-	-	1.5A	33W	68V	NI-780S	NI-780S
BF1100,215	NXP	MOSFET N-CH 14V 30MA SOT143 Transistor Type: N-Channel Dual Gate Frequency: 800MHz Gain: - Voltage - Test: 9V Current Rating: 30mA Noise Figure: 2dB Current - Test: 10mA Power - Output: - Voltage - Rated: 14V Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	Package: TO-253-4, TO-253AA	Stock3,568	800MHz	-	9V	30mA	2dB	10mA	-	14V	TO-253-4, TO-253AA	SOT-143B
BF886H6327XTSA1	Infineon Technologies	MOSFET N-CH RF 12V 30MA SOT-343 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	Package: -	Stock7,648	-	-	-	-	-	-	-	-	-	-
BLF184XRGQ	Ampleon USA Inc.	RF FET LDMOS 135V 23DB SOT1214C Transistor Type: LDMOS (Dual), Common Source Frequency: 108MHz Gain: 23.9dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 700W Voltage - Rated: 135V Package / Case: SOT-1214C Supplier Device Package: SOT1214C	Package: SOT-1214C	Stock6,336	108MHz	23.9dB	50V	-	-	100mA	700W	135V	SOT-1214C	SOT1214C
BLF8G10LS-270V,112	Ampleon USA Inc.	RF FET LDMOS 65V 19.5DB SOT1244B Transistor Type: LDMOS Frequency: 871.5MHz ~ 891.5MHz Gain: 19.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 2A Power - Output: 67W Voltage - Rated: 65V Package / Case: SOT-1244B Supplier Device Package: CDFM6	Package: SOT-1244B	Stock4,752	871.5MHz ~ 891.5MHz	19.5dB	28V	-	-	2A	67W	65V	SOT-1244B	CDFM6
AFT09MP055NR1	NXP	FET RF 2CH 40V 870MHZ TO-270 Transistor Type: LDMOS Frequency: 870MHz Gain: 15.7dB Voltage - Test: 12.5V Current Rating: - Noise Figure: - Current - Test: 550mA Power - Output: 1W Voltage - Rated: 40V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	Package: TO-270AB	Stock7,360	870MHz	15.7dB	12.5V	-	-	550mA	1W	40V	TO-270AB	TO-270 WB-4
PD85006TR-E	STMicroelectronics	FET RF 40V 870MHZ POWERSO-10RF Transistor Type: LDMOS Frequency: 870MHz Gain: 17dB Voltage - Test: 13.6V Current Rating: 2A Noise Figure: - Current - Test: 200mA Power - Output: 5W Voltage - Rated: 40V Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Supplier Device Package: PowerSO-10RF (Formed Lead)	Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Stock7,024	870MHz	17dB	13.6V	2A	-	200mA	5W	40V	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	PowerSO-10RF (Formed Lead)
ATF-541M4-BLK	Broadcom Limited	IC ENHANCED MOD SUDIOMORPHIC HEM Transistor Type: E-pHEMT Frequency: 2GHz Gain: 17.5dB Voltage - Test: 3V Current Rating: 120mA Noise Figure: 0.5dB Current - Test: 60mA Power - Output: 21.4dBm Voltage - Rated: 5V Package / Case: 0505 (1412 Metric) Supplier Device Package: MiniPak 1412	Package: 0505 (1412 Metric)	Stock4,720	2GHz	17.5dB	3V	120mA	0.5dB	60mA	21.4dBm	5V	0505 (1412 Metric)	MiniPak 1412
BLF888DU	Ampleon USA Inc.	RF FET LDMOS 104V 21DB SOT539A Transistor Type: LDMOS Frequency: 860MHz Gain: 21dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 250W Voltage - Rated: 104V Package / Case: SOT539A Supplier Device Package: SOT539A	Package: SOT539A	Stock5,728	860MHz	21dB	50V	-	-	1.3A	250W	104V	SOT539A	SOT539A
BLP25M710Z	Ampleon USA Inc.	RF FET LDMOS 65V 16DB 12VDFN Transistor Type: LDMOS (Dual), Common Source Frequency: 2.14GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 110mA Power - Output: 2W Voltage - Rated: 65V Package / Case: 12-VDFN Exposed Pad Supplier Device Package: 12-HVSON (5x6)	Package: 12-VDFN Exposed Pad	Stock3,600	2.14GHz	16dB	28V	-	-	110mA	2W	65V	12-VDFN Exposed Pad	12-HVSON (5x6)
MRF6V2010NR1	NXP	FET RF 110V 220MHZ TO270-2 Transistor Type: LDMOS Frequency: 220MHz Gain: 23.9dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 30mA Power - Output: 10W Voltage - Rated: 110V Package / Case: TO-270AA Supplier Device Package: TO-270-2	Package: TO-270AA	Stock5,856	220MHz	23.9dB	50V	-	-	30mA	10W	110V	TO-270AA	TO-270-2
BLP7G22-10Z	Ampleon USA Inc.	RF FET LDMOS 65V 16DB 12VDFN Transistor Type: LDMOS (Dual), Common Source Frequency: 2.14GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 110mA Power - Output: 2W Voltage - Rated: 65V Package / Case: 12-VDFN Exposed Pad Supplier Device Package: 12-HVSON (5x6)	Package: 12-VDFN Exposed Pad	Stock2,576	2.14GHz	16dB	28V	-	-	110mA	2W	65V	12-VDFN Exposed Pad	12-HVSON (5x6)
BLP8G27-5Z	Ampleon USA Inc.	RF FET LDMOS 65V 18DB 16VDFN Transistor Type: LDMOS Frequency: 2.14GHz Gain: 18dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 55mA Power - Output: 750mW Voltage - Rated: 65V Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-HVSON (4x6)	Package: 16-VDFN Exposed Pad	Stock4,800	2.14GHz	18dB	28V	-	-	55mA	750mW	65V	16-VDFN Exposed Pad	16-HVSON (4x6)
NPT2022	M/A-Com Technology Solutions	HEMT N-CH 48V 100W DC-2GHZ Transistor Type: HEMT Frequency: 0Hz ~ 2GHz Gain: 17dB Voltage - Test: 48V Current Rating: 14A Noise Figure: - Current - Test: 600mA Power - Output: 100W Voltage - Rated: 160V Package / Case: TO-272BC Supplier Device Package: TO-272-2	Package: TO-272BC	Stock5,296	0Hz ~ 2GHz	17dB	48V	14A	-	600mA	100W	160V	TO-272BC	TO-272-2
MMRF1014NT1	NXP	FET RF 68V 1.96GHZ PLD-1.5 Transistor Type: LDMOS Frequency: 1.96GHz Gain: 18dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 50mA Power - Output: 4W Voltage - Rated: 68V Package / Case: PLD-1.5 Supplier Device Package: PLD-1.5	Package: PLD-1.5	Stock18,216	1.96GHz	18dB	28V	-	-	50mA	4W	68V	PLD-1.5	PLD-1.5
MRF24301HR5	NXP	RF MOSFET LDMOS NI780 Transistor Type: LDMOS Frequency: 2.4GHz ~ 2.5GHz Gain: 13.5dB Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 300W Voltage - Rated: - Package / Case: SOT-957A Supplier Device Package: NI-780H-2L	Package: -	Request a Quote	2.4GHz ~ 2.5GHz	13.5dB	-	-	-	-	300W	-	SOT-957A	NI-780H-2L
A2T08VD020NT1	NXP	RF MOSFET LDMOS 48V 24QFN Transistor Type: LDMOS Frequency: 728MHz ~ 960MHz Gain: 19.1dB Voltage - Test: 48 V Current Rating: 10µA Noise Figure: - Current - Test: 40 mA Power - Output: 18W Voltage - Rated: 105 V Package / Case: 24-PowerQFN Supplier Device Package: 24-PQFN-EP (8x8)	Package: -	Request a Quote	728MHz ~ 960MHz	19.1dB	48 V	10µA	-	40 mA	18W	105 V	24-PowerQFN	24-PQFN-EP (8x8)
RF5L051K5CB4	STMicroelectronics	RF MOSFET LDMOS 50V D4E Transistor Type: LDMOS Frequency: 500MHz Gain: 22dB Voltage - Test: 50 V Current Rating: 1µA Noise Figure: - Current - Test: 200 mA Power - Output: 1500W Voltage - Rated: 110 V Package / Case: D4E Supplier Device Package: D4E	Package: -	Request a Quote	500MHz	22dB	50 V	1µA	-	200 mA	1500W	110 V	D4E	D4E
94-2402	International Rectifier	RF MOSFET 400V Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
1011GN-1200VEL	Microchip Technology	RF MOSFET HEMT 50V 55-Q03P Transistor Type: HEMT Frequency: 1.03GHz ~ 1.09GHz Gain: 20dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 150 mA Power - Output: 1200W Voltage - Rated: 150 V Package / Case: 55-Q03P Supplier Device Package: 55-Q03P	Package: -	Request a Quote	1.03GHz ~ 1.09GHz	20dB	50 V	-	-	150 mA	1200W	150 V	55-Q03P	55-Q03P
CGHV60040D-GP4	MACOM Technology Solutions	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 17dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 65 mA Power - Output: 40W Voltage - Rated: 150 V Package / Case: Die Supplier Device Package: Die	Package: -	Stock60	6GHz	17dB	50 V	-	-	65 mA	40W	150 V	Die	Die