Page 10 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB50CN10NGATMA1
Infineon Technologies

MOSFET N-CH 100V 20A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,072
IRL3714STRR
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,664
NTD70N03R-1G
ON Semiconductor

MOSFET N-CH 25V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock347,220
FDS7064SN3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock79,044
NDS9405
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock21,228
AUIRLU2905
Infineon Technologies

MOSFET N-CH 55V 42A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,512
AOT292L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 105A TO220F

Package: TO-220-3

Stock3,152
SI4421DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,232
MCH3486-TL-W
ON Semiconductor

MOSFET N-CH 60V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock2,704
FQPF4N90C
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4A TO-220F

Package: TO-220-3 Full Pack

Stock88,536
SIRA58DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock29,814
NDP7060
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

Package: TO-220-3

Stock448,332
TN0104N3-G
Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,840
SI4896DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 6.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,488
IPA65R150CFDXKSA2
Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

Package: -

Stock1,497
SISH103DN-T1-GE3
Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

Package: -

Stock35,670
SIHD186N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 19A DPAK

Package: -

Stock13,569
R6515ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

Package: -

Request a Quote
IPDQ65R029CFD7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

Package: -

Request a Quote
IPL65R210CFDAUMA2
Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB50CN10NGATMA1	Infineon Technologies	MOSFET N-CH 100V 20A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,072	MOSFET (Metal Oxide)	100V	20A (Tc)	10V	4V @ 20µA	16nC @ 10V	1090pF @ 50V	±20V	-	44W (Tc)	50 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3714STRR	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,664	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	3V @ 250µA	9.7nC @ 4.5V	670pF @ 10V	±20V	-	47W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD70N03R-1G	ON Semiconductor	MOSFET N-CH 25V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock347,220	MOSFET (Metal Oxide)	25V	10A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.36W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDS7064SN3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.13W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock79,044	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	3V @ 1mA	35nC @ 5V	2800pF @ 15V	±16V	-	3.13W (Ta)	8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDS9405	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock21,228	MOSFET (Metal Oxide)	20V	4.3A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1425pF @ 10V	±20V	-	2.5W (Ta)	100 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AUIRLU2905	Infineon Technologies	MOSFET N-CH 55V 42A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,512	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AOT292L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 105A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,152	MOSFET (Metal Oxide)	100V	14.5A (Ta), 105A (Tc)	6V, 10V	3.4V @ 250µA	126nC @ 10V	6775pF @ 50V	±20V	-	2.1W (Ta), 300W (Tc)	4.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SI4421DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,232	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	800mV @ 850µA	125nC @ 4.5V	-	±8V	-	1.5W (Ta)	8.75 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MCH3486-TL-W	ON Semiconductor	MOSFET N-CH 60V 2A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock2,704	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.6V @ 1mA	7nC @ 10V	310pF @ 20V	±20V	-	1W (Ta)	137 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
FQPF4N90C	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock88,536	MOSFET (Metal Oxide)	900V	4A (Tc)	10V	5V @ 250µA	22nC @ 10V	960pF @ 25V	±30V	-	47W (Tc)	4.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SIRA58DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 20V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 27.7W (Tc) Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock29,814	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.4V @ 250µA	75nC @ 10V	3750pF @ 20V	+20V, -16V	-	27.7W (Tc)	2.65 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NDP7060	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock448,332	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 250µA	115nC @ 10V	3600pF @ 25V	±20V	-	150W (Tc)	13 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
TN0104N3-G	Microchip Technology	MOSFET N-CH 40V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,840	MOSFET (Metal Oxide)	40V	450mA (Ta)	3V, 10V	1.6V @ 500µA	-	70pF @ 20V	±20V	-	1W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SI4896DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 6.7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,488	MOSFET (Metal Oxide)	80V	6.7A (Ta)	6V, 10V	2V @ 250µA (Min)	41nC @ 10V	-	±20V	-	1.56W (Ta)	16.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPA65R150CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 22.4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,497	MOSFET (Metal Oxide)	650 V	22.4A (Tc)	10V	4.5V @ 900µA	86 nC @ 10 V	2340 pF @ 100 V	±20V	-	34.7W (Tc)	150mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SISH103DN-T1-GE3	Vishay Siliconix	P-CHANNEL 30 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 15 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.67W (Ta), 41.6W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock35,670	MOSFET (Metal Oxide)	30 V	16A (Ta), 54A (Tc)	4.5V, 10V	2.5V @ 250µA	72 nC @ 10 V	2540 pF @ 15 V	±30V	-	3.67W (Ta), 41.6W (Tc)	155mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
SIHD186N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,569	MOSFET (Metal Oxide)	600 V	19A (Tc)	10V	5V @ 250µA	32 nC @ 10 V	1118 pF @ 100 V	±30V	-	156W (Tc)	201mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6515ENZC8	Rohm Semiconductor	MOSFET N-CH 650V 15A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	4V @ 430µA	40 nC @ 10 V	910 pF @ 25 V	±20V	-	60W (Tc)	315mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
IPDQ65R029CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	85A (Tc)	10V	4.5V @ 1.79mA	139 nC @ 10 V	7149 pF @ 400 V	±20V	-	463W (Tc)	29mOhm @ 35.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPL65R210CFDAUMA2	Infineon Technologies	MOSFET N-CH 650V 16.6A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	16.6A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	210mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
PJD40N06A-AU_L2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	13.5 nC @ 4.5 V	1574 pF @ 25 V	±20V	-	71W (Tc)	17mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN3R2-40YLDX	Nexperia USA Inc.	MOSFET N-CH 40V 120A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock8,940	MOSFET (Metal Oxide)	40 V	120A (Ta)	4.5V, 10V	2.05V @ 1mA	57 nC @ 10 V	4103 pF @ 20 V	±20V	Schottky Diode (Body)	115W (Ta)	3.3mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SCT4062KWATL	Rohm Semiconductor	1200V, 24A, 7-PIN SMD, TRENCH-ST FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7LA Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	24A (Tc)	18V	4.8V @ 6.45mA	64 nC @ 18 V	1498 pF @ 800 V	+21V, -4V	-	-	81mOhm @ 12A, 18V	175°C (TJ)	Surface Mount	TO-263-7LA	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UPA654TT-E1-A	Renesas Electronics Corporation	MOSFET P-CH 12V 6WSOF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 88mOhm @ 1.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-WSOF Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	-	-	1.5V @ 1mA	2.7 nC @ 4 V	250 pF @ 10 V	-	-	-	88mOhm @ 1.5A, 4.5V	-	Surface Mount	6-WSOF	6-SMD, Flat Leads
IXFH50N80XA	IXYS	MOSFET N-CH 50A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP22N65X2M	IXYS	MOSFET N-CH 650V 22A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	5V @ 1.5mA	37 nC @ 10 V	2190 pF @ 25 V	±30V	-	37W (Tc)	145mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
TQM056NH04LCR-RLG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	17A (Ta), 54A (Tc)	4.5V, 10V	2.2V @ 250µA	45.6 nC @ 10 V	-	±16V	-	78.9W (Tc)	5.6mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
SCTW60N120G2	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V Vgs (Max): +18V, -5V FET Feature: - Power Dissipation (Max): 389W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	60A (Tc)	18V	5V @ 1mA	94 nC @ 8 V	1969 pF @ 800 V	+18V, -5V	-	389W (Tc)	52mOhm @ 30A, 18V	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3