Page 1076 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7701TRPBF
Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,328
IRF7342D2PBF
Infineon Technologies

MOSFET P-CH 55V 3.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock8,736
APT5014B2VRG
Microsemi Corporation

MOSFET N-CH 500V T-MAX

Package: -

Stock4,128
NTMFS4925NET1G
ON Semiconductor

MOSFET N-CH 30V 48A SO8-FL

Package: 8-PowerTDFN, 5 Leads

Stock4,560
NP50P04KDG-E1-AY
Renesas Electronics America

MOSFET P-CH 40V 50A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,824
PMN49EN,135
NXP

MOSFET N-CH 30V 4.6A 6TSOP

Package: SC-74, SOT-457

Stock3,424
NTD4913N-35G
ON Semiconductor

MOSFET N-CH 30V 32A IPAK TRIMMED

Package: TO-251-3 Stub Leads, IPak

Stock3,072
2SK3050TL
Rohm Semiconductor

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock218,892
IRF830STRR
Vishay Siliconix

MOSFET N-CH 500V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,936
IXTA36N20T
IXYS

MOSFET N-CH 200V 36A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,248
TPS1101DR
Texas Instruments

MOSFET P-CH 15V 2.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock110,868
FDMC8360LET40
Fairchild/ON Semiconductor

PT8 N-CH 40/20V POWER TRENCH MOS

Package: 8-PowerWDFN

Stock7,888
PMPB95ENEAX
Nexperia USA Inc.

MOSFET N-CH 80V 2.8A SOT1220

Package: 6-UDFN Exposed Pad

Stock5,232
FDD6530A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 21A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,264
STD60NF55LT4
STMicroelectronics

MOSFET N-CH 55V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,505,724
IRFSL3306PBF
Infineon Technologies

MOSFET N-CH 60V 120A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock20,028
FDP26N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 26A TO-220

Package: TO-220-3

Stock18,228
DMS2220LFDB-7
Diodes Incorporated

MOSFET P-CH 20V 3.5A 6-DFN

Package: 6-UDFN Exposed Pad

Stock335,304
SQ1421EDH-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 1.6A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock85,812
DMP3011SFVWQ-13
Diodes Incorporated

MOSFET P-CH 30V 11.5A PWRDI3333

Package: -

Stock8,490

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7701TRPBF	Infineon Technologies	MOSFET P-CH 12V 10A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,328	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	1.2V @ 250µA	100nC @ 4.5V	5050pF @ 10V	±8V	-	1.5W (Ta)	11 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7342D2PBF	Infineon Technologies	MOSFET P-CH 55V 3.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,736	MOSFET (Metal Oxide)	55V	3.4A (Ta)	4.5V, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	105 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
APT5014B2VRG	Microsemi Corporation	MOSFET N-CH 500V T-MAX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMFS4925NET1G	ON Semiconductor	MOSFET N-CH 30V 48A SO8-FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,560	MOSFET (Metal Oxide)	30V	9.7A (Ta), 48A (Tc)	4.5V, 10V	2.2V @ 250µA	21.5nC @ 10V	1264pF @ 15V	±20V	-	920mW (Ta), 23.2W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NP50P04KDG-E1-AY	Renesas Electronics America	MOSFET P-CH 40V 50A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,824	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 1mA	100nC @ 10V	5100pF @ 10V	±20V	-	1.8W (Ta), 90W (Tc)	10 mOhm @ 25A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMN49EN,135	NXP	MOSFET N-CH 30V 4.6A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock3,424	MOSFET (Metal Oxide)	30V	4.6A (Tc)	4.5V, 10V	2V @ 1mA	8.8nC @ 4.5V	350pF @ 30V	±20V	-	1.75W (Tc)	47 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
NTD4913N-35G	ON Semiconductor	MOSFET N-CH 30V 32A IPAK TRIMMED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,072	MOSFET (Metal Oxide)	30V	7.7A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	13nC @ 10V	1013pF @ 15V	±20V	-	1.36W (Ta), 24W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
2SK3050TL	Rohm Semiconductor	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock218,892	MOSFET (Metal Oxide)	600V	2A (Ta)	10V	4V @ 1mA	25.6nC @ 10V	280pF @ 10V	±30V	-	20W (Tc)	5.5 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF830STRR	Vishay Siliconix	MOSFET N-CH 500V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,936	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	-	3.1W (Ta), 74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA36N20T	IXYS	MOSFET N-CH 200V 36A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,248	MOSFET (Metal Oxide)	200V	36A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPS1101DR	Texas Instruments	MOSFET P-CH 15V 2.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock110,868	MOSFET (Metal Oxide)	15V	2.3A (Ta)	2.7V, 10V	1.5V @ 250µA	11.25nC @ 10V	-	+2V, -15V	-	791mW (Ta)	90 mOhm @ 2.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDMC8360LET40	Fairchild/ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 141A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,888	MOSFET (Metal Oxide)	40V	27A (Ta), 141A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	5300pF @ 20V	±20V	-	2.8W (Ta), 75W (Tc)	2.1 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power33	8-PowerWDFN
PMPB95ENEAX	Nexperia USA Inc.	MOSFET N-CH 80V 2.8A SOT1220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,232	MOSFET (Metal Oxide)	80V	2.8A (Ta)	4.5V, 10V	2.7V @ 250µA	14.9nC @ 10V	504pF @ 40V	±20V	-	1.6W (Ta), 15.6W (Tc)	105 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
FDD6530A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 21A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,264	MOSFET (Metal Oxide)	20V	21A (Ta)	2.5V, 4.5V	1.2V @ 250µA	9nC @ 4.5V	710pF @ 10V	±8V	-	3.3W (Ta), 33W (Tc)	32 mOhm @ 8A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
STD60NF55LT4	STMicroelectronics	MOSFET N-CH 55V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,505,724	MOSFET (Metal Oxide)	55V	60A (Tc)	4.5V, 10V	2V @ 250µA	56nC @ 5V	1950pF @ 25V	±15V	-	100W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFSL3306PBF	Infineon Technologies	MOSFET N-CH 60V 120A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock20,028	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 150µA	120nC @ 10V	4520pF @ 50V	±20V	-	230W (Tc)	4.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FDP26N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 26A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3185pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 265W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock18,228	MOSFET (Metal Oxide)	400V	26A (Tc)	10V	5V @ 250µA	60nC @ 10V	3185pF @ 25V	±30V	-	265W (Tc)	160 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMS2220LFDB-7	Diodes Incorporated	MOSFET P-CH 20V 3.5A 6-DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type B) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock335,304	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	1.3V @ 250µA	-	632pF @ 10V	±12V	Schottky Diode (Isolated)	1.4W (Ta)	95 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad
SQ1421EDH-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 1.6A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock85,812	MOSFET (Metal Oxide)	60V	1.6A (Tc)	4.5V, 10V	2.5V @ 250µA	5.4nC @ 4.5V	355pF @ 25V	±20V	-	3.3W (Tc)	290 mOhm @ 2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
DMP3011SFVWQ-13	Diodes Incorporated	MOSFET P-CH 30V 11.5A PWRDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 980mW (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock8,490	MOSFET (Metal Oxide)	30 V	19.8A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	46 nC @ 10 V	2380 pF @ 15 V	±25V	-	980mW (Ta)	10mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
IXTA3N110-TRL	IXYS	MOSFET N-CH 1100V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1100 V	3A (Tc)	10V	4.5V @ 250µA	39 nC @ 10 V	1300 pF @ 25 V	±20V	-	150W (Tc)	4Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA50R250CPXKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	13A (Tc)	10V	3.5V @ 520µA	36 nC @ 10 V	1420 pF @ 100 V	±20V	-	33W (Tc)	250mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
MMFT1N10ET1	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NX138BKHH	Nexperia USA Inc.	MOSFET N-CH 60V 380MA DFN0606-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 380mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock172,677	MOSFET (Metal Oxide)	60 V	380mA (Ta)	-	1.5V @ 250µA	0.7 nC @ 10 V	20 pF @ 30 V	±20V	-	380mW (Ta), 2.8W (Tc)	2.3Ohm @ 380mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
FDWS86380-F085	onsemi	MOSFET N-CH 80V 50A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: -	Stock8,940	MOSFET (Metal Oxide)	80 V	50A (Tc)	10V	4V @ 250µA	30 nC @ 10 V	1440 pF @ 40 V	±20V	-	75W (Tj)	13.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
RD3L08BGNTL	Rohm Semiconductor	MOSFET N-CH 60V 80A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,239	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	2.5V @ 100µA	71 nC @ 10 V	3620 pF @ 30 V	±20V	-	119W (Tc)	5.5mOhm @ 80A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO4268	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 60V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	19A (Ta)	4.5V, 10V	2.3V @ 250µA	65 nC @ 10 V	2500 pF @ 30 V	±20V	-	3.1W (Ta)	4.8mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SPW21N50C3FKSA1	Infineon Technologies	MOSFET N-CH 560V 21A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	3.9V @ 1mA	95 nC @ 10 V	2400 pF @ 25 V	±20V	-	208W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3