Page 1156 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSC032N03SG
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

Package: 8-PowerTDFN

Stock249,012
IRL3803SPBF
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,936
IRF8113TR
Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock449,280
IRFR2407TRL
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,696
IRL520NSTRL
Infineon Technologies

MOSFET N-CH 100V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,624
APT5020BNFR
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

Package: TO-247-3

Stock7,200
NVD4805NT4G
ON Semiconductor

MOSFET N-CH 30V 88A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
SUP28N15-52-E3
Vishay Siliconix

MOSFET N-CH 150V 28A TO220AB

Package: TO-220-3

Stock60,432
FQPF6N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 3.6A TO-220F

Package: TO-220-3 Full Pack

Stock7,168
BSF035NE2LQXUMA1
Infineon Technologies

MOSFET N-CH 25V 22A 2WDSON

Package: 3-WDSON

Stock6,080
IXFK180N15P
IXYS

MOSFET N-CH 150V 180A TO-264

Package: TO-264-3, TO-264AA

Stock6,128
TN2640K4-G
Microchip Technology

MOSFET N-CH 400V 500MA 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,680
IRFD9010
Vishay Siliconix

MOSFET P-CH 50V 1.1A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock14,340
DMP2066LVT-13
Diodes Incorporated

MOSFET P-CH 20V 4.5A TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock7,520
NX2301PVL
Nexperia USA Inc.

NX2301P/SOT23/TO-236AB

Package: -

Stock4,368
STH275N8F7-2AG
STMicroelectronics

MOSFET N-CH 80V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,408
TPH3208PS
Transphorm

GAN FET 650V 20A TO220

Package: TO-220-3

Stock17,796
IRF530PBF
Vishay Siliconix

MOSFET N-CH 100V 14A TO-220AB

Package: TO-220-3

Stock9,048
DMP2004UFG-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V PowerDI3333

Package: -

Request a Quote
NTBGS2D5N06C
onsemi

POWER MOSFET, 60 V, 2.5 M?, 224

Package: -

Stock2,388

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSC032N03SG	Infineon Technologies	MOSFET N-CH 30V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock249,012	MOSFET (Metal Oxide)	30V	23A (Ta), 100A (Tc)	4.5V, 10V	2V @ 70µA	39nC @ 5V	5080pF @ 15V	±20V	-	2.8W (Ta), 78W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRL3803SPBF	Infineon Technologies	MOSFET N-CH 30V 140A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,936	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF8113TR	Infineon Technologies	MOSFET N-CH 30V 17.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock449,280	MOSFET (Metal Oxide)	30V	17.2A (Ta)	4.5V, 10V	2.2V @ 250µA	36nC @ 4.5V	2910pF @ 15V	±20V	-	2.5W (Ta)	5.6 mOhm @ 17.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR2407TRL	Infineon Technologies	MOSFET N-CH 75V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,696	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	110W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL520NSTRL	Infineon Technologies	MOSFET N-CH 100V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,624	MOSFET (Metal Oxide)	100V	10A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	3.8W (Ta), 48W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT5020BNFR	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,200	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
NVD4805NT4G	ON Semiconductor	MOSFET N-CH 30V 88A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	30V	12.7A (Ta), 95A (Tc)	4.5V, 11.5V	2.5V @ 250µA	48nC @ 11.5V	2865pF @ 12V	±20V	-	1.41W (Ta), 79W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SUP28N15-52-E3	Vishay Siliconix	MOSFET N-CH 150V 28A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,432	MOSFET (Metal Oxide)	150V	28A (Tc)	6V, 10V	4.5V @ 250µA	40nC @ 10V	1725pF @ 25V	±20V	-	3.75W (Ta), 120W (Tc)	52 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQPF6N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,168	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	5V @ 250µA	25nC @ 10V	1000pF @ 25V	±30V	-	44W (Tc)	1.5 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
BSF035NE2LQXUMA1	Infineon Technologies	MOSFET N-CH 25V 22A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock6,080	MOSFET (Metal Oxide)	25V	22A (Ta), 69A (Tc)	4.5V, 10V	2V @ 250µA	25nC @ 10V	1862pF @ 12V	±20V	-	2.2W (Ta), 28W (Tc)	3.5 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
IXFK180N15P	IXYS	MOSFET N-CH 150V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,128	MOSFET (Metal Oxide)	150V	180A (Tc)	10V	5V @ 4mA	240nC @ 10V	7000pF @ 25V	±20V	-	830W (Tc)	11 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
TN2640K4-G	Microchip Technology	MOSFET N-CH 400V 500MA 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,680	MOSFET (Metal Oxide)	400V	500mA (Tj)	4.5V, 10V	2V @ 2mA	-	225pF @ 25V	±20V	-	2.5W (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFD9010	Vishay Siliconix	MOSFET P-CH 50V 1.1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock14,340	MOSFET (Metal Oxide)	50V	1.1A (Tc)	10V	4V @ 250µA	11nC @ 10V	240pF @ 25V	±20V	-	1W (Tc)	500 mOhm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
DMP2066LVT-13	Diodes Incorporated	MOSFET P-CH 20V 4.5A TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1496pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,520	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	14.4nC @ 4.5V	1496pF @ 15V	±8V	-	1.2W (Ta)	45 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
NX2301PVL	Nexperia USA Inc.	NX2301P/SOT23/TO-236AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,368	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STH275N8F7-2AG	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,408	MOSFET (Metal Oxide)	80V	180A (Tc)	10V	4.5V @ 250µA	193nC @ 10V	13600pF @ 50V	±20V	-	315W (Tc)	2.1 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant
TPH3208PS	Transphorm	GAN FET 650V 20A TO220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock17,796	GaNFET (Gallium Nitride)	650V	20A (Tc)	8V	2.6V @ 300µA	14nC @ 8V	760pF @ 400V	±18V	-	96W (Tc)	130 mOhm @ 13A, 8V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRF530PBF	Vishay Siliconix	MOSFET N-CH 100V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock9,048	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	±20V	-	88W (Tc)	160 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMP2004UFG-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V PowerDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	115A (Tc)	2.5V, 10V	1.1V @ 250µA	83 nC @ 10 V	3840 pF @ 10 V	±12V	-	1W (Ta)	3mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
NTBGS2D5N06C	onsemi	POWER MOSFET, 60 V, 2.5 M?, 224 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 4V @ 175µA Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock2,388	MOSFET (Metal Oxide)	60 V	27A (Ta), 169A (Tc)	10V, 12V	4V @ 175µA	45.4 nC @ 10 V	3510 pF @ 30 V	±20V	-	3.7W (Ta), 136W (Tc)	2.5mOhm @ 35A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-7, D2PAK (6 Leads + Tab)
DMP4016SSSQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SO-8 T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	10.8A (Ta)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	1.6W	11mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMFS016N06CT1G	onsemi	MOSFET N-CH 60V 10A/33A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	60 V	10A (Ta), 33A (Tc)	10V	4V @ 25µA	6.9 nC @ 10 V	489 pF @ 30 V	±20V	-	3.4W (Ta), 36W (Tc)	15.6mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
GSFP1526	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 25A, 150V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (5.1x5.71) Package / Case: 8-PowerTDFN	Package: -	Stock8,337	MOSFET (Metal Oxide)	150 V	25A (Tc)	10V	4V @ 250µA	23 nC @ 10 V	1620 pF @ 80 V	±20V	-	101W (Tc)	51mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (5.1x5.71)	8-PowerTDFN
MTB29N15ET4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA120P065T-TRL	IXYS	MOSFET P-CH 65V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	120A (Tc)	10V	4V @ 250µA	185 nC @ 10 V	13200 pF @ 25 V	±15V	-	298W (Tc)	10mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ISP26DP06NMSATMA1	Infineon Technologies	MOSFET P-CH 60V SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock186	MOSFET (Metal Oxide)	60 V	1.9A (Ta)	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
TSM160P04LCRHRLG	Taiwan Semiconductor Corporation	MOSFET P-CH 40V 51A 8PDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	51A (Tc)	4.5V, 10V	2.5V @ 250µA	48 nC @ 10 V	2712 pF @ 20 V	±20V	-	69W (Tc)	16mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
IXFK210N30X3	IXYS	MOSFET N-CH 300V 210A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	24200 pF @ 25 V	±20V	-	1250W (Tc)	5.5mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA