Page 1177 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP070N08N3 G
Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

Package: TO-220-3

Stock390,000
IRFC2604B
Infineon Technologies

MOSFET

Package: -

Stock7,584
AON6232A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 35A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock3,792
GP1M003A080CH
Global Power Technologies Group

MOSFET N-CH 800V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,144
JAN2N6798U
Microsemi Corporation

MOSFET N-CH 18-LCC

Package: 18-BQFN Exposed Pad

Stock7,280
BFL4004
ON Semiconductor

MOSFET N-CH 800V 4.3A TO-220F

Package: TO-220-3 Full Pack

Stock2,096
2SJ0674G0L
Panasonic Electronic Components

MOSFET P-CH 30V .1A SSSMINI-3

Package: SOT-723

Stock3,296
PHP63NQ03LT,127
NXP

MOSFET N-CH 30V 68.9A TO220AB

Package: TO-220-3

Stock4,320
FQU30N06LTU
Fairchild/ON Semiconductor

MOSFET N-CH 60V 24A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,352
STT4PF20V
STMicroelectronics

MOSFET P-CH 20V 3A SOT-23-6

Package: SOT-23-6

Stock755,040
IPSA70R600CEAKMA1
Infineon Technologies

MOSFET COOLMOS 700V TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock3,712
IXTP48P05T
IXYS

MOSFET P-CH 50V 48A TO-220

Package: TO-220-3

Stock6,288
MCH3383-TL-W
ON Semiconductor

MOSFET P-CH 12V 3.5A SC70FL

Package: 3-SMD, Flat Leads

Stock7,472
TSM2N100CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,504
TSM150P04LCS RLG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -40V,

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,256
FQP12P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 11.5A TO-220

Package: TO-220-3

Stock13,560
IRF7526D1TRPBF
Infineon Technologies

MOSFET P-CH 30V 2A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock2,000
SIE832DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 50A 10-POLARPAK

Package: 10-PolarPAK? (S)

Stock7,280
DMN3730UFB4-7
Diodes Incorporated

MOSFET N-CH 30V 750MA DFN

Package: 3-XFDFN

Stock467,100
TPW4R008NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 116A 8DSOP

Package: 8-PowerWDFN

Stock36,828

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP070N08N3 G	Infineon Technologies	MOSFET N-CH 80V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 73µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3840pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	80V	80A (Tc)	6V, 10V	3.5V @ 73µA	56nC @ 10V	3840pF @ 40V	±20V	-	136W (Tc)	7 mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRFC2604B	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock7,584	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	-	-
AON6232A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 35A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 113.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,792	MOSFET (Metal Oxide)	40V	35A (Ta), 85A (Tc)	4.5V, 10V	2.5V @ 250µA	60nC @ 10V	3250pF @ 20V	±20V	-	6.2W (Ta), 113.5W (Tc)	2.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
GP1M003A080CH	Global Power Technologies Group	MOSFET N-CH 800V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,144	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4V @ 250µA	19nC @ 10V	696pF @ 25V	±30V	-	94W (Tc)	4.2 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
JAN2N6798U	Microsemi Corporation	MOSFET N-CH 18-LCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock7,280	MOSFET (Metal Oxide)	200V	5.5A (Tc)	10V	4V @ 250µA	42.07nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	420 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
BFL4004	ON Semiconductor	MOSFET N-CH 800V 4.3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,096	MOSFET (Metal Oxide)	800V	4.3A (Ta)	10V	4V @ 1mA	36nC @ 10V	710pF @ 30V	±30V	-	2W (Ta), 36W (Tc)	2.5 Ohm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
2SJ0674G0L	Panasonic Electronic Components	MOSFET P-CH 30V .1A SSSMINI-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 18 Ohm @ 10mA, 4V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F2 Package / Case: SOT-723	Package: SOT-723	Stock3,296	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±12V	-	100mW (Ta)	18 Ohm @ 10mA, 4V	125°C (TJ)	Surface Mount	SSSMini3-F2	SOT-723
PHP63NQ03LT,127	NXP	MOSFET N-CH 30V 68.9A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,320	MOSFET (Metal Oxide)	30V	68.9A (Tc)	5V, 10V	2.5V @ 1mA	9.6nC @ 5V	920pF @ 25V	±20V	-	111W (Tc)	13 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQU30N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,352	MOSFET (Metal Oxide)	60V	24A (Tc)	5V, 10V	2.5V @ 250µA	20nC @ 5V	1040pF @ 25V	±20V	-	2.5W (Ta), 44W (Tc)	39 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STT4PF20V	STMicroelectronics	MOSFET P-CH 20V 3A SOT-23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock755,040	MOSFET (Metal Oxide)	20V	3A (Tc)	2.7V, 4.5V	600mV @ 250µA	7.8nC @ 4.5V	500pF @ 15V	±10V	-	1.6W (Tc)	110 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
IPSA70R600CEAKMA1	Infineon Technologies	MOSFET COOLMOS 700V TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,712	MOSFET (Metal Oxide)	700V	10.5A (Tc)	10V	3.5V @ 210µA	22nC @ 10V	474pF @ 100V	±20V	-	86W (Tc)	600 mOhm @ 1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IXTP48P05T	IXYS	MOSFET P-CH 50V 48A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,288	MOSFET (Metal Oxide)	50V	48A (Tc)	10V	4.5V @ 250µA	53nC @ 10V	3660pF @ 25V	±15V	-	150W (Tc)	30 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MCH3383-TL-W	ON Semiconductor	MOSFET P-CH 12V 3.5A SC70FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 69 mOhm @ 1.5A, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock7,472	MOSFET (Metal Oxide)	12V	3.5A (Ta)	0.9V, 2.5V	800mV @ 1mA	6.2nC @ 2.5V	1010pF @ 6V	±5V	-	1W (Ta)	69 mOhm @ 1.5A, 2.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
TSM2N100CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,504	MOSFET (Metal Oxide)	1000V	1.85A (Tc)	10V	5.5V @ 250µA	17nC @ 10V	625pF @ 25V	±30V	-	77W (Tc)	8.5 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM150P04LCS RLG	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -40V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2783pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,256	MOSFET (Metal Oxide)	40V	22A (Tc)	4.5V, 10V	2.5V @ 250µA	48nC @ 10V	2783pF @ 20V	±20V	-	12.5W (Tc)	15 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FQP12P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 11.5A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock13,560	MOSFET (Metal Oxide)	100V	11.5A (Tc)	10V	4V @ 250µA	27nC @ 10V	800pF @ 25V	±30V	-	75W (Tc)	290 mOhm @ 5.75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF7526D1TRPBF	Infineon Technologies	MOSFET P-CH 30V 2A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock2,000	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	1V @ 250µA	11nC @ 10V	180pF @ 25V	±20V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
SIE832DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 50A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock7,280	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	3V @ 250µA	77nC @ 10V	3800pF @ 20V	±20V	-	5.2W (Ta), 104W (Tc)	5.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
DMN3730UFB4-7	Diodes Incorporated	MOSFET N-CH 30V 750MA DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock467,100	MOSFET (Metal Oxide)	30V	750mA (Ta)	1.8V, 4.5V	950mV @ 250µA	1.6nC @ 4.5V	64.3pF @ 25V	±8V	-	470mW (Ta)	460 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
TPW4R008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 116A 8DSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock36,828	MOSFET (Metal Oxide)	80V	116A (Tc)	10V	4V @ 1mA	59nC @ 10V	5300pF @ 40V	±20V	-	800mW (Ta), 142W (Tc)	4 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	8-DSOP Advance	8-PowerWDFN
FDME820NZT	Fairchild/ON Semiconductor	MOSFET N-CH 20V 9A MICROFET 1.6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFet 1.6x1.6 Thin Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock719,040	MOSFET (Metal Oxide)	20V	9A (Ta)	1.8V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	865pF @ 10V	±12V	-	2.1W (Ta)	18 mOhm @ 9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFet 1.6x1.6 Thin	6-PowerUFDFN
SSR2N60BTF	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1.8A (Tc)	10V	4V @ 250µA	17 nC @ 10 V	490 pF @ 25 V	±30V	-	2.5W (Ta), 44W (Tc)	5Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBC40APBF-BE3	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock663	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	-	4V @ 250µA	42 nC @ 10 V	1036 pF @ 25 V	±30V	-	125W (Tc)	1.2Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHG125N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	47 nC @ 10 V	1533 pF @ 100 V	±30V	-	179W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
2SK3483-0-Z-E1-AY	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 28A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	28A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
G35N02K	Goford Semiconductor	N20V,RD(MAX)<13M@4.5V,RD(MAX)<18 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock651	MOSFET (Metal Oxide)	20 V	35A (Tc)	2.5V, 4.5V	1.2V @ 250µA	24 nC @ 4.5 V	1380 pF @ 10 V	±12V	-	40W (Tc)	13mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
C3M0021120K	Wolfspeed, Inc.	SICFET N-CH 1200V 100A TO247-4L FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 469W (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock4,068	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	15V	3.6V @ 17.7mA	162 nC @ 15 V	4818 pF @ 1000 V	+15V, -4V	-	469W (Tc)	28.8mOhm @ 50A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
TK25V60X5-LQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DTM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	Package: -	Stock7,500	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	4.5V @ 1.2mA	60 nC @ 10 V	2400 pF @ 300 V	±30V	-	180W (Tc)	150mOhm @ 7.5A, 10V	150°C	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad