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Infineon Technologies |
MOSFET N-CH 500V 13A PG-TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,976 |
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MOSFET (Metal Oxide) | 500V | 13A (Tc) | 13V | 3.5V @ 350µA | 32.6nC @ 10V | 773pF @ 100V | ±20V | Super Junction | 92W (Tc) | 280 mOhm @ 4.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,720 |
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MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 1.6V @ 8µA | 2.1nC @ 5V | 28pF @ 25V | ±20V | Depletion Mode | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 37A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock175,920 |
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MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | ±20V | - | 35W (Tc) | 15 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,080 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 220W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 14V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock91,620 |
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MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 125nC @ 5V | 8075pF @ 10V | ±12V | - | 2.5W (Ta) | 12 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 17.3W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,280 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 5V @ 250µA | 8.4nC @ 10V | 423pF @ 25V | ±30V | - | 17.3W (Tc) | 600 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Microsemi Corporation |
MOSFET N-CH TO-205AF TO-39
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-39
- Package / Case: TO-205AF Metal Can
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Package: TO-205AF Metal Can |
Stock4,176 |
|
MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 14.3nC @ 10V | - | ±20V | - | 800mW (Tc) | 850 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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IXYS |
MOSFET N-CH 500V 39A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,360 |
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MOSFET (Metal Oxide) | 500V | 39A | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | - | 400W (Tc) | 120 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 150V 88A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,456 |
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MOSFET (Metal Oxide) | 150V | 88A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 400W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 8.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock7,232 |
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MOSFET (Metal Oxide) | 20V | 13A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 19nC @ 8V | 834pF @ 10V | ±12V | - | 1.8W (Ta) | 32 mOhm @ 8.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 600V DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,968 |
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MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 4V @ 250µA | 8.8nC @ 10V | 271pF @ 100V | ±25V | - | 60W (Tc) | 950 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock12,324 |
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MOSFET (Metal Oxide) | 60V | 8.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 190nC @ 10V | - | ±20V | - | 1.9W (Ta) | 14.5 mOhm @ 14.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA
- Package / Case: 6-UFBGA, DSBGA
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Package: 6-UFBGA, DSBGA |
Stock6,384 |
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MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | 595pF @ 10V | ±8V | - | 750mW (Ta) | 32.5 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA | 6-UFBGA, DSBGA |
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STMicroelectronics |
MOSFET N-CH 60V 38A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 19A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock1,022,808 |
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MOSFET (Metal Oxide) | 60V | 38A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | ±20V | - | 80W (Tc) | 28 mOhm @ 19A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 1.8A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 374 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (8x8) HV
- Package / Case: 4-PowerFlat? HV
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Package: 4-PowerFlat? HV |
Stock5,872 |
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MOSFET (Metal Oxide) | 650V | 1.8A (Ta), 10A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 816pF @ 100V | ±25V | - | 2.8W (Ta), 70W (Tc) | 374 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (8x8) HV | 4-PowerFlat? HV |
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Diodes Incorporated |
MOSFET N-CH 30V 9.8A SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1.54W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock43,650 |
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MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 43nC @ 10V | 1849pF @ 15V | ±12V | Schottky Diode (Body) | 1.54W (Ta) | 13 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 250V 93A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10880pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,584 |
|
MOSFET (Metal Oxide) | 250V | 93A (Tc) | 10V | 5V @ 250µA | 270nC @ 10V | 10880pF @ 50V | ±20V | - | 520W (Tc) | 17.5 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V MICROFOOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-UFBGA
|
Package: 4-UFBGA |
Stock36,000 |
|
MOSFET (Metal Oxide) | 30V | - | 1.5V, 4.5V | 900mV @ 250µA | 10nC @ 8V | 330pF @ 15V | ±8V | - | 500mW (Ta) | 95 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
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|
onsemi |
MOSFET N-CH 30V 41A IPAK-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: IPAK
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 9.4A (Ta), 41A (Tc) | - | 2.5V @ 250µA | 9 nC @ 4.5 V | 837 pF @ 15 V | - | - | - | 9mOhm @ 30A, 10V | - | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
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Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 249µA
- Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,199 |
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MOSFET (Metal Oxide) | 40 V | 43A (Ta), 201A (Tc) | 6V, 10V | 3.4V @ 249µA | 315 nC @ 10 V | 15000 pF @ 20 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.15mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
SICFET N-CH 1.2KV 19A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
- Vgs (Max): +23V, -7V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
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Package: - |
Stock696 |
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SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | 5.7V @ 2.5mA | 13 nC @ 18 V | 454 pF @ 800 V | +23V, -7V | - | 94W (Tc) | 182mOhm @ 6A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Harris Corporation |
MOSFET N-CH 100V 1.3A 4DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 1.3A (Ta) | - | 4V @ 250µA | 16 nC @ 10 V | 360 pF @ 25 V | - | - | - | 270mOhm @ 780mA, 10V | - | Through Hole | 4-HVMDIP | 4-DIP (0.300", 7.62mm) |
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Goford Semiconductor |
P-30V,-7A,RD(MAX)<20.5M@-10V,VTH
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Tc)
- Rds On (Max) @ Id, Vgs: 20.5mOhm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 7A (Tc) | 4.5V, 10V | 1.1V @ 250µA | 19 nC @ 4.5 V | 1900 pF @ 15 V | ±20V | - | 1.3W (Tc) | 20.5mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-WDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT323 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 450mW (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Stock7,032 |
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MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.7 nC @ 4.5 V | 38 pF @ 10 V | ±8V | - | 450mW (Ta) | 200mOhm @ 300mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Taiwan Semiconductor Corporation |
650V, 10A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220S
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 4.5V @ 250µA | 34 nC @ 10 V | 1650 pF @ 50 V | ±30V | - | 45W (Tc) | 900mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 30A 5LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 30A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 11 nC @ 4.5 V | 1730 pF @ 10 V | ±20V | - | 15W (Tc) | 7.9mOhm @ 15A, 10V | 150°C | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 600V 21MA SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-5
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock13,032 |
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MOSFET (Metal Oxide) | 600 V | 21mA (Ta) | - | 1.6V @ 8µA | 1.4 nC @ 5 V | 21 pF @ 25 V | ±20V | Depletion Mode | 500mW (Ta) | 500Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-5 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 650V 12A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 4.5V @ 1.2mA | 24 nC @ 10 V | 1010 pF @ 400 V | ±30V | - | 90W (Tc) | 260mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |