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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock39,336 |
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MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V | 1V @ 250µA | 33nC @ 5V | 2335pF @ 16V | ±12V | - | 3.1W (Ta) | 12 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock94,800 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 79nC @ 10V | 1800pF @ 25V | ±20V | - | 2.5W (Ta) | 11 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,144 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | ±20V | - | 45W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock34,200 |
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MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 1V @ 250µA | 33nC @ 4.5V | 1650pF @ 25V | ±16V | - | 94W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Nexperia USA Inc. |
MOSFET N-CH TRENCH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock4,720 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Nexperia USA Inc. |
MOSFET N-CH 60V D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock6,976 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 221W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-426
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
|
Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock4,160 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 84nC @ 10V | 3140pF @ 25V | ±20V | Current Sensing | 221W (Tc) | 8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-426 | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
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Vishay Siliconix |
MOSFET P-CH 20V 6A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Dual
- Package / Case: PowerPAK? ChipFET? Dual
|
Package: PowerPAK? ChipFET? Dual |
Stock4,256 |
|
MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 17nC @ 10V | 480pF @ 10V | ±12V | Schottky Diode (Isolated) | 2.3W (Ta), 10.4W (Tc) | 58 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Dual | PowerPAK? ChipFET? Dual |
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|
Microsemi Corporation |
MOSFET N-CH 300V 40A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,048 |
|
MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 4V @ 1mA | 195nC @ 10V | 4950pF @ 25V | ±30V | - | 300W (Tc) | 85 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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|
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,344 |
|
MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
IXYS |
MOSFET N-CH 800V 62A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1560W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock2,352 |
|
MOSFET (Metal Oxide) | 800V | 62A (Tc) | 10V | 6.5V @ 8mA | 270nC @ 10V | 13600pF @ 25V | ±30V | - | 1560W (Tc) | 140 mOhm @ 31A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
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|
IXYS |
MOSFET N-CH 600V 32A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 154 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,600 |
|
MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 6.5V @ 4mA | 140nC @ 10V | 7020pF @ 25V | ±30V | - | 500W (Tc) | 154 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,632 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 3.5V @ 110µA | 15nC @ 10V | 350pF @ 500V | ±20V | - | 45W (Tc) | 900 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 3A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock49,908 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 250µA | 16.5nC @ 10V | 705pF @ 25V | ±30V | - | 39W (Tc) | 4.8 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 560V 4.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock236,700 |
|
MOSFET (Metal Oxide) | 560V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 22nC @ 10V | 470pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Nexperia USA Inc. |
MOSFET P-CH 20V 4A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 2.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock148,080 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 15.5nC @ 4.5V | 1890pF @ 10V | ±8V | - | 510mW (Ta) | 36 mOhm @ 2.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock13,668 |
|
MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | ±30V | - | 144W (Tc) | 400 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock54,810 |
|
MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 2.6V @ 8µA | 1nC @ 10V | 28pF @ 25V | ±20V | - | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 21A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock307,500 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 5V | 462pF @ 15V | ±20V | - | 28W (Ta) | 35 mOhm @ 7.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Vishay Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,318,344 |
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MOSFET (Metal Oxide) | 12V | 4.1A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 18nC @ 4.5V | 1100pF @ 6V | ±8V | - | 750mW (Ta) | 32 mOhm @ 5.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 4.5V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 15.4A (Ta), 138A (Tc) | 10V, 15V | 4.5V @ 253µA | 108 nC @ 10 V | 7300 pF @ 100 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 6.2mOhm @ 100A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2PAK (6 Leads + Tab) |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 12A (Ta), 46A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 41 nC @ 10 V | 2361 pF @ 50 V | ±20V | - | 2.5W (Ta), 39W (Tc) | 8.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 4V @ 250µA | 48 nC @ 10 V | 820 pF @ 100 V | ±30V | - | 78W (Tc) | 600mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 123 nC @ 10 V | 3950 pF @ 15 V | ±20V | - | 69W (Tc) | 2.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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onsemi |
NCH 2.5V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Micro Commercial Co |
MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 2.8A | 2.5V, 4.5V | 1V @ 250µA | 14.5 nC @ 4.5 V | 880 pF @ 6 V | ±8V | - | 1.25W | 120mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 4V @ 250µA | 48 nC @ 10 V | 820 pF @ 100 V | ±30V | - | 78W (Tc) | 600mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 35A LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V
- Vgs (Max): +16V, -10V
- FET Feature: -
- Power Dissipation (Max): 50W (Ta)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: - |
Stock17,547 |
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MOSFET (Metal Oxide) | 40 V | 35A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 21 nC @ 10 V | 1345 pF @ 25 V | +16V, -10V | - | 50W (Ta) | 11mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |