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Infineon Technologies |
MOSFET N-CH 60V 18A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,568 |
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MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 2V @ 16µA | 13nC @ 10V | 470pF @ 30V | ±20V | - | 47W (Tc) | 64 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.37W (Ta)
- Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock5,792 |
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MOSFET (Metal Oxide) | 30V | 9.4A (Ta) | 1.8V, 10V | 1.1V @ 250µA | 7.5nC @ 4.5V | 690pF @ 15V | ±12V | - | 2.37W (Ta) | 11.4 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET DFN 5X6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock3,008 |
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- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
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Nexperia USA Inc. |
MOSFET N-CH 60V DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,720 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta)
- Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PS-8 (2.9x2.4)
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock4,048 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | ±20V | - | 840mW (Ta) | 12.9 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 19A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock756,576 |
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MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | ±20V | - | 55W (Tc) | 70 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock6,976 |
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MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 1.5V @ 1mA | - | 75pF @ 25V | ±20V | - | 700mW (Ta) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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STMicroelectronics |
MOSFET N-CH 500V 11A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,872 |
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MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1600pF @ 25V | ±30V | - | 140W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 75V 70A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2725pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock103,464 |
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MOSFET (Metal Oxide) | 75V | 70A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 2725pF @ 25V | ±20V | - | 150W (Tc) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock7,376 |
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MOSFET (Metal Oxide) | 100V | 8A (Ta), 33A (Ta) | 4.5V, 10V | 3V @ 250µA | 13.5nC @ 10V | 905pF @ 25V | ±16V | - | 3.6W (Ta), 62W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 5A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock2,336 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 2.6V @ 1mA | 5.6nC @ 10V | 280pF @ 10V | ±20V | - | 1.5W (Ta) | 55 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 400V 350MA 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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Package: 4-DIP (0.300", 7.62mm) |
Stock11,508 |
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MOSFET (Metal Oxide) | 400V | 350mA (Ta) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 1W (Ta) | 3.6 Ohm @ 210mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock448,368 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 77nC @ 10V | 3340pF @ 15V | ±20V | - | 5W (Ta), 48W (Tc) | 3.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 30A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: SOT-1210, 8-LFPAK33 (5-Lead) |
Stock2,720 |
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MOSFET (Metal Oxide) | 40V | 30A (Tc) | 5V | 2.1V @ 1mA | 7.7nC @ 5V | 798pF @ 25V | ±10V | - | 44W (Tc) | 20 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock140,988 |
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MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 18nC @ 4.5V | 2660pF @ 12.5V | +16V, -12V | - | 3.1W (Ta) | 2.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6-MLP 2X2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
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Package: 6-VDFN Exposed Pad |
Stock527,964 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | 760pF @ 15V | ±20V | - | 2.4W (Ta) | 21 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-2 Full Pack
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Package: TO-220-2 Full Pack |
Stock9,156 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4V @ 1mA | 85nC @ 10V | 2100pF @ 25V | ±30V | - | 40W (Tc) | 130 mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Diodes Incorporated |
MOSFET P-CH 20V U-WLB1515-9
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1515-9
- Package / Case: 9-UFBGA, WLBGA
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Package: 9-UFBGA, WLBGA |
Stock24,576 |
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MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | 500pF @ 10V | -6V | - | 1W (Ta) | 33 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock15,012 |
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MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Nexperia USA Inc. |
MOSFET N-CH 30V 61A LL LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1057pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock49,518 |
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MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 16nC @ 10V | 1057pF @ 15V | ±20V | - | 48W (Tc) | 7.1 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,142,724 |
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MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | ±20V | - | 350mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 500V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock122,616 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | ±25V | - | 90W (Tc) | 320 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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onsemi |
T6 60V N-CH LL IN LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 16A (Ta), 71A (Tc) | 4.5V, 10V | 2V @ 53µA | 19 nC @ 10 V | 1330 pF @ 25 V | ±20V | - | 3.2W (Ta), 63W (Tc) | 6.8mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN0604-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN0604-3
- Package / Case: 3-XFDFN
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Package: - |
Stock30,000 |
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MOSFET (Metal Oxide) | 20 V | 530mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.3 nC @ 4.5 V | 17 pF @ 16 V | ±8V | - | 340mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0604-3 | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 12A/42.5A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock38,733 |
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MOSFET (Metal Oxide) | 100 V | 12A (Ta), 42.5A (Tc) | 7.5V, 10V | 3.4V @ 250µA | 38 nC @ 10 V | 1850 pF @ 50 V | ±20V | - | 5W (Ta), 62.5W (Tc) | 14.4mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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onsemi |
MOSFET N-CH 40V 65A/420A 8DFNW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9230 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
- Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock11,694 |
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MOSFET (Metal Oxide) | 40 V | 65A (Ta), 420A (Tc) | 10V | 4V @ 250µA | 140 nC @ 10 V | 9230 pF @ 25 V | ±20V | - | 4.9W (Ta), 205W (Tc) | 0.67mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Renesas Electronics Corporation |
MOSFET N-CH 600V 2A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.5V @ 1mA | 6.2 nC @ 10 V | 165 pF @ 25 V | ±30V | - | 30W (Tc) | 6.8Ohm @ 1A, 10V | 150°C | Surface Mount | MP-3A | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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MOSLEADER |
P -20V -4.9A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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