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Infineon Technologies |
MOSFET N-CH 20V 211A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 211A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 158nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 8292pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 50A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MD
- Package / Case: DirectFET? Isometric MD
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Package: DirectFET? Isometric MD |
Stock3,824 |
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MOSFET (Metal Oxide) | 20V | 38A (Ta), 211A (Tc) | 2.5V, 4.5V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | ±12V | - | 2.1W (Ta), 63W (Tc) | 0.75 mOhm @ 50A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MD | DirectFET? Isometric MD |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,576 |
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MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | ±12V | Schottky Diode (Isolated) | 2W (Ta) | 62 mOhm @ 2.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 1.9A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,968 |
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MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 4.5V, 10V | 3V @ 100µA | 5nC @ 4.5V | - | ±20V | - | 950mW (Ta) | 150 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 60V 20A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock120,756 |
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MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | ±20V | - | 36W (Tc) | 39 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 800V 13A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock3,088 |
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MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 4.5V @ 4mA | 90nC @ 10V | 3250pF @ 25V | ±20V | - | 250W (Tc) | 700 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 34A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock116,040 |
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MOSFET (Metal Oxide) | 200V | 34A (Tc) | 5V, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | ±20V | - | 210W (Tc) | 75 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 12.1A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
- Rds On (Max) @ Id, Vgs: 490 mOhm @ 6.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,120 |
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MOSFET (Metal Oxide) | 500V | 12.1A (Tc) | 10V | 5V @ 250µA | 51nC @ 10V | 2020pF @ 25V | ±30V | - | 3.13W (Ta), 179W (Tc) | 490 mOhm @ 6.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 7.3A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,160 |
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MOSFET (Metal Oxide) | 100V | 7.3A (Tc) | 10V | 4V @ 250µA | 7.5nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 350 mOhm @ 3.65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 60V 15A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock18,420 |
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MOSFET (Metal Oxide) | 60V | 15A (Ta) | 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±15V | - | 1.5W (Ta), 48W (Tj) | 100 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 20A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-3P-3 Full Pack
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Package: TO-3P-3 Full Pack |
Stock15,828 |
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MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 4200pF @ 25V | ±20V | - | 260W (Tc) | 270 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock405,096 |
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MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 3.1W (Ta), 50W (Tc) | 1.8 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 9A WDSON-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
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Package: 3-WDSON |
Stock2,928 |
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MOSFET (Metal Oxide) | 150V | 9A (Ta), 30A (Tc) | 10V | 4V @ 60µA | 21nC @ 10V | 1600pF @ 75V | ±20V | - | 2.8W (Ta), 57W (Tc) | 28 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
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Microsemi Corporation |
MOSFET N-CH 1000V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,880 |
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MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5V @ 1mA | 71nC @ 10V | 1969pF @ 25V | ±30V | - | 298W (Tc) | 950 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 12A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,312 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 5V @ 250µA | 48nC @ 10V | 1375pF @ 25V | ±30V | - | 208W (Tc) | 555 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock24,744 |
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MOSFET (Metal Oxide) | 100V | 25A (Ta) | 10V | - | 41nC @ 10V | 3000pF @ 10V | ±20V | - | 65W (Tc) | 14 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Rohm Semiconductor |
NCH 600V 24A POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
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Package: SC-83 |
Stock6,000 |
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MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | ±20V | - | 245W (Tc) | 165 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | SC-83 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 650V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13020pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock9,612 |
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MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 5V @ 7.6mA | 294nC @ 10V | 13020pF @ 100V | ±20V | - | 595W (Tc) | 41 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,992 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±25V | - | 140W (Tc) | 165 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Diodes Incorporated |
MOSFET N-CHA 40V 17.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock21,222 |
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MOSFET (Metal Oxide) | 40V | 17.6A (Ta), 76A (Tc) | 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | ±20V | - | 3.1W (Ta) | 6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 30V 10A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.42W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock28,212 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 17nC @ 10V | 478.9pF @ 15V | ±20V | - | 1.42W (Ta) | 23 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 40V 58A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock43,392 |
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MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 55nC @ 10V | 2450pF @ 20V | ±20V | - | 48W (Tc) | 6.3 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V 30A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock41,496 |
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MOSFET (Metal Oxide) | 30V | 30A (Ta), 136A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45.2nC @ 10V | 3071pF @ 15V | ±20V | - | 3.1W (Ta), 64W (Tc) | 2.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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STMicroelectronics |
TO247-4
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V
- Vgs (Max): +18V, -5V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tc) | 15V, 18V | 4.2V @ 1mA | 32 nC @ 18 V | 721 pF @ 40 V | +18V, -5V | - | 210W (Tc) | 72mOhm @ 15A, 18V | -55°C ~ 200°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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YAGEO XSEMI |
MOSFET N-CH 60V 2.5A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 60 V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 16 nC @ 10 V | 720 pF @ 15 V | ±20V | - | 1.25W (Ta) | 90mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 4A/11A 6DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock345,879 |
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MOSFET (Metal Oxide) | 60 V | 4A (Ta), 11A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 12 nC @ 10 V | 435 pF @ 30 V | ±20V | - | 2W (Ta), 15W (Tc) | 56mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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IceMOS Technology |
Superjunction MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6090 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 3.9V @ 250µA | 189 nC @ 10 V | 6090 pF @ 25 V | ±20V | - | 171W (Tc) | 68mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock13,185 |
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MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14.9 nC @ 10 V | 1009 pF @ 15 V | ±20V | - | 860mW (Ta) | 6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 60V 2.6A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 2.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 4 nC @ 10 V | 105 pF @ 30 V | ±20V | - | 1.6W (Tc) | 144mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |