Page 140 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP15P10PGHKSA1
Infineon Technologies

MOSFET P-CH 100V 15A TO-220

Package: TO-220-3

Stock7,392
IRF7210PBF
Infineon Technologies

MOSFET P-CH 12V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,112
IRFR420TRL
Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,000
IRFR9214
Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,800
IXFR24N90Q
IXYS

MOSFET N-CH 900V ISOPLUS247

Package: ISOPLUS247?

Stock3,520
PSMN2R1-40PLQ
Nexperia USA Inc.

MOSFET N-CH 40V 150A TO-220

Package: TO-220-3

Stock6,832
RRS100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A 8SOIC

Package: 8-SOIC

Stock7,728
DMP6110SSSQ-13
Diodes Incorporated

MOSFET PCH 60V 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,608
PMT560ENEAX
Nexperia USA Inc.

PMT560ENEA/SC-73/REEL 7" Q1/T1

Package: TO-261-4, TO-261AA

Stock4,704
IPB017N10N5ATMA1
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,872
BUK765R2-40B,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock32,616
STFI9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock16,956
STP42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A TO-220

Package: TO-220-3

Stock780,000
IRFU024PBF
Vishay Siliconix

MOSFET N-CH 60V 14A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock31,242
ZXMN2F30FHTA
Diodes Incorporated

MOSFET N-CH 20V 4.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,385,024
TSM090N03ECP
Taiwan Semiconductor Corporation

30V, 50A, SINGLE N-CHANNEL POWER

Package: -

Request a Quote
STS2306-ML
MOSLEADER

Single-N 20V 2.8A SOT-23

Package: -

Request a Quote
FDD4685-F085P
onsemi

MOSFET P-CH 40V 32A TO252

Package: -

Request a Quote
IPA65R380E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO220-FP

Package: -

Stock1,398
SM2300NSANC-TRG-ML
MOSLEADER

N 20V 4A SOT-23N

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP15P10PGHKSA1	Infineon Technologies	MOSFET P-CH 100V 15A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	100V	15A (Tc)	10V	2.1V @ 1.54mA	48nC @ 10V	1280pF @ 25V	±20V	-	128W (Tc)	240 mOhm @ 10.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRF7210PBF	Infineon Technologies	MOSFET P-CH 12V 16A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 500µA Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,112	MOSFET (Metal Oxide)	12V	16A (Ta)	2.5V, 4.5V	600mV @ 500µA	212nC @ 5V	17179pF @ 10V	±12V	-	2.5W (Ta)	7 mOhm @ 16A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR420TRL	Vishay Siliconix	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,000	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	4V @ 250µA	19nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	3 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9214	Vishay Siliconix	MOSFET P-CH 250V 2.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,800	MOSFET (Metal Oxide)	250V	2.7A (Tc)	10V	4V @ 250µA	14nC @ 10V	220pF @ 25V	±20V	-	50W (Tc)	3 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFR24N90Q	IXYS	MOSFET N-CH 900V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,520	MOSFET (Metal Oxide)	900V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
PSMN2R1-40PLQ	Nexperia USA Inc.	MOSFET N-CH 40V 150A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 9584pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,832	MOSFET (Metal Oxide)	40V	150A (Tc)	10V	2.1V @ 1mA	87.8nC @ 5V	9584pF @ 25V	±20V	-	293W (Tc)	2.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RRS100P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC	Package: 8-SOIC	Stock7,728	MOSFET (Metal Oxide)	30V	10A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC	8-SOIC
DMP6110SSSQ-13	Diodes Incorporated	MOSFET PCH 60V 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,608	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	3V @ 250µA	19.4nC @ 10V	1030pF @ 30V	±20V	-	1.5W (Ta)	110 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PMT560ENEAX	Nexperia USA Inc.	PMT560ENEA/SC-73/REEL 7" Q1/T1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 715 mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,704	MOSFET (Metal Oxide)	100V	1.1A (Ta)	4.5V, 10V	2.7V @ 250µA	4.4nC @ 10V	112pF @ 50V	±20V	-	750mW (Ta)	715 mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-73	TO-261-4, TO-261AA
IPB017N10N5ATMA1	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,872	MOSFET (Metal Oxide)	100V	180A (Tc)	6V, 10V	3.8V @ 279µA	210nC @ 10V	15600pF @ 50V	±20V	-	375W (Tc)	1.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
BUK765R2-40B,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3789pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock32,616	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	52nC @ 10V	3789pF @ 25V	±20V	-	203W (Tc)	5.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFI9N80K5	STMicroelectronics	MOSFET N-CH 800V 7A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock16,956	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 100µA	12nC @ 10V	340pF @ 100V	±30V	-	25W (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Full Pack, I2Pak
STP42N65M5	STMicroelectronics	MOSFET N-CH 650V 33A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock780,000	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	5V @ 250µA	100nC @ 10V	4650pF @ 100V	±25V	-	190W (Tc)	79 mOhm @ 16.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFU024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock31,242	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
ZXMN2F30FHTA	Diodes Incorporated	MOSFET N-CH 20V 4.1A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,385,024	MOSFET (Metal Oxide)	20V	4.1A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4.8nC @ 4.5V	452pF @ 10V	±12V	-	960mW (Ta)	45 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TSM090N03ECP	Taiwan Semiconductor Corporation	30V, 50A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	7.7 nC @ 4.5 V	680 pF @ 25 V	±20V	-	40W (Tc)	9mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STS2306-ML	MOSLEADER	Single-N 20V 2.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD4685-F085P	onsemi	MOSFET P-CH 40V 32A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tj) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	32A (Tc)	4.5V, 10V	3V @ 250µA	27 nC @ 5 V	2380 pF @ 20 V	±20V	-	83W (Tj)	27mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA65R380E6XKSA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,398	MOSFET (Metal Oxide)	650 V	10.6A (Tc)	10V	3.5V @ 320µA	39 nC @ 10 V	710 pF @ 100 V	±20V	-	31W (Tc)	380mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SM2300NSANC-TRG-ML	MOSLEADER	N 20V 4A SOT-23N FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI3099-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.1A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock16,212	MOSFET (Metal Oxide)	30 V	1.1A	2.5V, 10V	1.5V @ 250µA	1.72 nC @ 10 V	61 pF @ 15 V	±12V	-	830mW	408mOhm @ 500nA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MCU40N10AHE3-TP	Micro Commercial Co	MOSFET N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	40A	6V, 10V	4V @ 250µA	25 nC @ 10 V	1218 pF @ 50 V	±20V	-	1.25W (Ta), 50W (Tc)	16.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NP35N055YUK-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 55V 35A 8HSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 97W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-HSON (5x5.4) Package / Case: 8-PowerLDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	55 V	35A (Tc)	10V	4V @ 250µA	57 nC @ 10 V	3360 pF @ 25 V	±20V	-	1W (Ta), 97W (Tc)	6.7mOhm @ 18A, 10V	175°C	Surface Mount	8-HSON (5x5.4)	8-PowerLDFN
UF3C120080K4S	Qorvo	SICFET N-CH 1200V 33A TO247-4 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock49,425	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	254.2W (Tc)	100mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NTMFS1D1N04XMT1G	onsemi	40V T10M IN S08FL PACKAGE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	44A (Ta), 233A (Tc)	10V	3.5V @ 120µA	49.3 nC @ 10 V	3138 pF @ 25 V	±20V	-	104W (Tc)	1.05mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
RF1S15N06SM	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	15A	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQ2319ES-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 4.6A TO-236 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	4.6A (Tc)	-	2.5V @ 250µA	16 nC @ 10 V	620 pF @ 25 V	-	-	-	75mOhm @ 3A, 10V	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2305-TP-HF	Micro Commercial Co	Interface FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	8 V	4.1A (Ta)	1.8V, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	740 pF @ 4 V	±8V	-	1.4W (Ta)	90mOhm @ 2A, 1.8V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3