Page 1422 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD60R520CPBTMA1
Infineon Technologies

MOSFET N-CH 600V 6.8A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
IRF7828TRPBF
Infineon Technologies

MOSFET N-CH 30V 13.6A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,000
IRF3704STRRPBF
Infineon Technologies

MOSFET N-CH 20V 77A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,048
SCH1331-P-TL-H
ON Semiconductor

MOSFET P-CH 12V 3A SCH6

Package: SOT-563, SOT-666

Stock48,996
SUD06N10-225L-E3
Vishay Siliconix

MOSFET N-CH 100V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock662,784
HUFA76633S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,080
FQPF5N60CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.5A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock5,344
STS19N3LLH6
STMicroelectronics

MOSFET N-CH 30V 19A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock41,952
STB40N20
STMicroelectronics

MOSFET N-CH 200V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,000
IXTX210P10T
IXYS

MOSFET P-CH 100V 210A PLUS247

Package: TO-247-3

Stock7,552
NVMFS5C450NAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,000
SIJ800DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 20A PPAK SO-8

Package: PowerPAK? SO-8

Stock9,720
FDS9431A_F085
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,440
NTLUS4930NTBG
ON Semiconductor

MOSFET N-CH 30V 6.3A UDFN6

Package: 6-UDFN Exposed Pad

Stock3,456
IRFS4115TRL7PP
Infineon Technologies

MOSFET N-CH 150V 105A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock11,088
FQPF9N25CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 8.8A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock54,084
STF120NF10
STMicroelectronics

MOSFET N-CH 100V 41A TO-220FP

Package: TO-220-3 Full Pack

Stock17,532
EPC2040
EPC

MOSFET NCH 15V 3.4A DIE

Package: Die

Stock381,288
IRFH5300TRPBF
Infineon Technologies

MOSFET N-CH 30V 40A PQFN

Package: 8-PowerVDFN

Stock24,492
GSFP3944
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 45A, 30V,

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R520CPBTMA1	Infineon Technologies	MOSFET N-CH 600V 6.8A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	3.5V @ 250µA	31nC @ 10V	630pF @ 100V	±20V	-	66W (Tc)	520 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7828TRPBF	Infineon Technologies	MOSFET N-CH 30V 13.6A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,000	MOSFET (Metal Oxide)	30V	13.6A (Ta)	4.5V	1V @ 250µA	14nC @ 5V	1010pF @ 15V	±20V	-	2.5W (Ta)	12.5 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF3704STRRPBF	Infineon Technologies	MOSFET N-CH 20V 77A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,048	MOSFET (Metal Oxide)	20V	77A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	87W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SCH1331-P-TL-H	ON Semiconductor	MOSFET P-CH 12V 3A SCH6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock48,996	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	6-SCH	SOT-563, SOT-666
SUD06N10-225L-E3	Vishay Siliconix	MOSFET N-CH 100V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock662,784	MOSFET (Metal Oxide)	100V	6.5A (Tc)	4.5V, 10V	3V @ 250µA	4nC @ 5V	240pF @ 25V	±20V	-	1.25W (Ta), 20W (Tc)	200 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76633S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,080	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF5N60CYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock5,344	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	33W (Tc)	2.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
STS19N3LLH6	STMicroelectronics	MOSFET N-CH 30V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock41,952	MOSFET (Metal Oxide)	30V	19A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 15V	1690pF @ 25V	±20V	-	2.7W (Ta)	5.6 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STB40N20	STMicroelectronics	MOSFET N-CH 200V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,000	MOSFET (Metal Oxide)	200V	40A (Tc)	10V	4V @ 250µA	75nC @ 10V	2500pF @ 25V	±20V	-	160W (Tc)	45 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTX210P10T	IXYS	MOSFET P-CH 100V 210A PLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 69500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,552	MOSFET (Metal Oxide)	100V	210A (Tc)	10V	4.5V @ 250µA	740nC @ 10V	69500pF @ 25V	±15V	-	1040W (Tc)	7.5 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
NVMFS5C450NAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,000	MOSFET (Metal Oxide)	40V	24A (Ta), 102A (Tc)	10V	3.5V @ 65µA	23nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 68W (Tc)	3.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SIJ800DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock9,720	MOSFET (Metal Oxide)	40V	20A (Tc)	4.5V, 10V	3V @ 250µA	56nC @ 10V	2400pF @ 20V	±20V	-	4.2W (Ta), 35.7W (Tc)	9.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDS9431A_F085	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,440	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	405pF @ 10V	±8V	-	2.5W (Ta)	130 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTLUS4930NTBG	ON Semiconductor	MOSFET N-CH 30V 6.3A UDFN6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock3,456	MOSFET (Metal Oxide)	30V	3.8A (Ta)	4.5V, 10V	2.2V @ 250µA	8.7nC @ 10V	476pF @ 15V	±20V	-	650mW (Ta)	28.5 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
IRFS4115TRL7PP	Infineon Technologies	MOSFET N-CH 150V 105A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock11,088	MOSFET (Metal Oxide)	150V	105A (Tc)	10V	5V @ 250µA	110nC @ 10V	5320pF @ 50V	±20V	-	380W (Tc)	11.8 mOhm @ 63A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FQPF9N25CYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 8.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock54,084	MOSFET (Metal Oxide)	250V	8.8A (Tc)	10V	4V @ 250µA	35nC @ 10V	710pF @ 25V	±30V	-	38W (Tc)	430 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
STF120NF10	STMicroelectronics	MOSFET N-CH 100V 41A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,532	MOSFET (Metal Oxide)	100V	41A (Tc)	10V	4V @ 250µA	233nC @ 10V	5200pF @ 25V	±20V	-	45W (Tc)	10.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
EPC2040	EPC	MOSFET NCH 15V 3.4A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30 mOhm @ 1.5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock381,288	GaNFET (Gallium Nitride)	15V	3.4A (Ta)	5V	2.5V @ 1mA	0.93nC @ 5V	105pF @ 6V	-	-	-	30 mOhm @ 1.5A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRFH5300TRPBF	Infineon Technologies	MOSFET N-CH 30V 40A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock24,492	MOSFET (Metal Oxide)	30V	40A (Ta), 100A (Tc)	4.5V, 10V	2.35V @ 150µA	120nC @ 10V	7200pF @ 15V	±20V	-	3.6W (Ta), 250W (Tc)	1.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
GSFP3944	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 45A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock18,000	MOSFET (Metal Oxide)	30 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 10 V	1350 pF @ 15 V	±20V	-	30W (Tc)	7.9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (3.1x3.05)	8-PowerVDFN
SIHK155N60EF-T1GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	5V @ 250µA	38 nC @ 10 V	1465 pF @ 100 V	±20V	-	156W (Tc)	52mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
ICE15N73FP	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 730 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2816 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	730 V	15A (Tc)	10V	3.5V @ 250µA	75 nC @ 10 V	2816 pF @ 100 V	±20V	-	35W (Tc)	350mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack, Isolated Tab
RF6G035BGTCR	Rohm Semiconductor	NCH 40V 3.5A, TUMT6, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 910mW (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	3.5A (Ta)	4.5V, 10V	2.5V @ 1mA	3.5 nC @ 10 V	150 pF @ 20 V	±20V	-	910mW (Ta)	46mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RTR020N05HZGTL	Rohm Semiconductor	MOSFET N-CH 45V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock18,939	MOSFET (Metal Oxide)	45 V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.1 nC @ 4.5 V	200 pF @ 10 V	±12V	-	700mW (Ta)	180mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DMN2055U-7	Diodes Incorporated	MOSFET N-CH 20V 4.8A SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock9,000	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	400 pF @ 10 V	±8V	-	800mW (Ta)	38mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPB035N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,931	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3.5V @ 155µA	117 nC @ 10 V	8110 pF @ 40 V	±20V	-	214W (Tc)	3.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
HUF76121S3	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6076MNZ1C9	Rohm Semiconductor	MOSFET N-CHANNEL 600V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 740W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	5V @ 1mA	115 nC @ 10 V	7000 pF @ 25 V	±30V	-	740W (Tc)	55mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3