Page 153 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI80N03S4L04AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,024
IRL7833STRRPBF
Infineon Technologies

MOSFET N-CH 30V 150A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,612
GP2M005A060PG
Global Power Technologies Group

MOSFET N-CH 600V 4.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,816
SI8417DB-T2-E1
Vishay Siliconix

MOSFET P-CH 12V 14.5A 2X2 6MFP

Package: 6-MICRO FOOT?

Stock2,718,000
SI7860DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock36,732
FQPF18N20V2YDTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 18A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock73,320
IXTP160N085T
IXYS

MOSFET N-CH 85V 160A TO-220

Package: TO-220-3

Stock2,880
HUF76013D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 20V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock211,200
IPC60R299CPX1SA2
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock7,056
IXTH460P2
IXYS

MOSFET N-CH 500V 24A TO-247

Package: TO-247-3

Stock6,304
TK11A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 11A TO-220SIS

Package: TO-220-3 Full Pack

Stock3,504
BUK664R8-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,408
STQ1NC45R-AP
STMicroelectronics

MOSFET N-CH 450V 0.5A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock683,868
SI2307BDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 2.5A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock881,412
FDMT80080DC
Fairchild/ON Semiconductor

MOSFET N-CH 80V

Package: 8-PowerVDFN

Stock5,280
DMN6140LQ-7
Diodes Incorporated

MOSFET N-CH 60V 1.6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,112
STW20N65M5
STMicroelectronics

MOSFET N-CH 650V 18A TO247

Package: TO-247-3

Stock4,752
PSMN5R2-60YLX
Nexperia USA Inc.

MOSFET N-CH 60V LFPAK56

Package: SC-100, SOT-669

Stock18,000
FDY302NZ
Fairchild/ON Semiconductor

MOSFET N-CH 20V SC-89-3

Package: SC-89, SOT-490

Stock215,760
APT6021BFLLG
Microchip Technology

MOSFET N-CH 600V 29A TO247

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI80N03S4L04AKSA1	Infineon Technologies	MOSFET N-CH 30V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,024	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.2V @ 45µA	75nC @ 10V	5100pF @ 25V	±16V	-	94W (Tc)	3.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL7833STRRPBF	Infineon Technologies	MOSFET N-CH 30V 150A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,612	MOSFET (Metal Oxide)	30V	150A (Tc)	4.5V, 10V	2.3V @ 250µA	47nC @ 4.5V	4170pF @ 15V	±20V	-	140W (Tc)	3.8 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP2M005A060PG	Global Power Technologies Group	MOSFET N-CH 600V 4.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 98.4W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,816	MOSFET (Metal Oxide)	600V	4.2A (Tc)	10V	5V @ 250µA	14nC @ 10V	658pF @ 25V	±30V	-	98.4W (Tc)	2.1 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SI8417DB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 14.5A 2X2 6MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-MICRO FOOT?	Package: 6-MICRO FOOT?	Stock2,718,000	MOSFET (Metal Oxide)	12V	14.5A (Tc)	1.8V, 4.5V	900mV @ 250µA	57nC @ 5V	2220pF @ 6V	±8V	-	2.9W (Ta), 6.57W (Tc)	21 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-MICRO FOOT?
SI7860DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,732	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FQPF18N20V2YDTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 18A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock73,320	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	5V @ 250µA	26nC @ 10V	1080pF @ 25V	±30V	-	40W (Tc)	140 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
IXTP160N085T	IXYS	MOSFET N-CH 85V 160A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,880	MOSFET (Metal Oxide)	85V	160A (Tc)	10V	4V @ 1mA	164nC @ 10V	6400pF @ 25V	±20V	-	360W (Tc)	6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUF76013D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 20V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 624pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock211,200	MOSFET (Metal Oxide)	20V	20A (Tc)	5V, 10V	3V @ 250µA	17nC @ 10V	624pF @ 20V	±20V	-	50W (Tc)	22 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC60R299CPX1SA2	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,056	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH460P2	IXYS	MOSFET N-CH 500V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,304	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	2890pF @ 25V	±30V	-	480W (Tc)	270 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
TK11A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 11A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,504	MOSFET (Metal Oxide)	550V	11A (Ta)	10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	±30V	-	45W (Tc)	630 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
BUK664R8-75C,118	Nexperia USA Inc.	MOSFET N-CH 75V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,408	MOSFET (Metal Oxide)	75V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	177nC @ 10V	11400pF @ 25V	±16V	-	263W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STQ1NC45R-AP	STMicroelectronics	MOSFET N-CH 450V 0.5A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock683,868	MOSFET (Metal Oxide)	450V	500mA (Tc)	10V	3.7V @ 250µA	7nC @ 10V	160pF @ 25V	±30V	-	3.1W (Tc)	4.5 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SI2307BDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock881,412	MOSFET (Metal Oxide)	30V	2.5A (Ta)	10V	3V @ 250µA	15nC @ 10V	380pF @ 15V	±20V	-	750mW (Ta)	78 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FDMT80080DC	Fairchild/ON Semiconductor	MOSFET N-CH 80V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20720pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,280	MOSFET (Metal Oxide)	80V	36A (Ta), 254A (Tc)	8V, 10V	4V @ 250µA	273nC @ 10V	20720pF @ 40V	±20V	-	3.2W (Ta), 156W (Tc)	1.35 mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
DMN6140LQ-7	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,112	MOSFET (Metal Oxide)	60V	1.6A (Ta)	4.5V, 10V	3V @ 250µA	8.6nC @ 10V	315pF @ 40V	±20V	-	700mW (Ta)	140 mOhm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STW20N65M5	STMicroelectronics	MOSFET N-CH 650V 18A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,752	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	45nC @ 10V	1345pF @ 100V	±25V	-	130W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
PSMN5R2-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6319pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock18,000	MOSFET (Metal Oxide)	60V	100A (Tc)	5V, 10V	2.1V @ 1mA	39.4nC @ 5V	6319pF @ 25V	±20V	-	195W (Tc)	5.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FDY302NZ	Fairchild/ON Semiconductor	MOSFET N-CH 20V SC-89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock215,760	MOSFET (Metal Oxide)	20V	600mA (Ta)	1.8V, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	±12V	-	625mW (Ta)	300 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
APT6021BFLLG	Microchip Technology	MOSFET N-CH 600V 29A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	29A (Tc)	-	5V @ 1mA	80 nC @ 10 V	3470 pF @ 25 V	-	-	-	210mOhm @ 14.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
DI200N04PQ	Diotec Semiconductor	MOSFET PWRQFN 5X6 40V 0.0013OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	10V	4V @ 250µA	92 nC @ 10 V	5768 pF @ 20 V	±20V	-	180W (Tc)	1.3mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
IAUZ18N10S5L420ATMA1	Infineon Technologies	MOSFET N-CH 100V 18A TSDSON-8-32 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-32 Package / Case: 8-PowerTDFN	Package: -	Stock8,388	MOSFET (Metal Oxide)	100 V	18A (Tc)	4.5V, 10V	2.2V @ 8µA	8 nC @ 10 V	470 pF @ 50 V	±20V	-	30W (Tc)	42mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-32	8-PowerTDFN
RJK03K5DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL POWER SWITCHING MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQD07N25-350H_GE3	Vishay Siliconix	MOSFET N-CH 250V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	7A (Tc)	10V	3.5V @ 250µA	29 nC @ 10 V	1205 pF @ 25 V	±30V	-	71W (Tc)	350mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHB5N80AE-GE3	Vishay Siliconix	E SERIES POWER MOSFET D2PAK (TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,965	MOSFET (Metal Oxide)	800 V	4.4A (Tc)	10V	4V @ 250µA	16.5 nC @ 10 V	321 pF @ 100 V	±30V	-	62.5W (Tc)	1.35Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJ464EP-T2_GE3	Vishay Siliconix	MOSFET N-CH 60V 32A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	44 nC @ 10 V	2086 pF @ 30 V	±20V	-	45W (Tc)	17mOhm @ 7.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NVBG070N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET-ELI FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,238	SiC (Silicon Carbide Junction Transistor)	1200 V	36A (Tc)	18V	4.4V @ 7mA	57 nC @ 18 V	1230 pF @ 800 V	+22V, -10V	-	172W (Tc)	87mOhm @ 15A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTGD3133PT1H	onsemi	PFET TSOP6 20V 2.3A 145MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-