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Infineon Technologies |
MOSFET P-CH 60V 18.7A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 81.1W (Ta)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock532,080 |
|
MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | ±20V | - | 81.1W (Ta) | 130 mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 100V 31A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock15,960 |
|
MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | ±20V | - | 3W (Ta), 110W (Tc) | 39 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,672 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 70A (Tc) | 10V, 20V | 3.5V @ 250µA | 61nC @ 10V | 3500pF @ 15V | ±25V | - | 2.5W (Ta), 90W (Tc) | 6.2 mOhm @ 20A, 20V | -55°C ~ 155°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET P-CH 60V 12A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tj)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock182,400 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | ±20V | - | 55W (Tj) | 180 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 14A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
Package: 8-PowerSMD, Flat Leads |
Stock301,632 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 22A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 28nC @ 10V | 1430pF @ 15V | ±20V | - | 2.4W (Ta), 31W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
|
IXYS |
MOSFET N-CH 600V 5.4A TO220ABFP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABFP
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock2,752 |
|
MOSFET (Metal Oxide) | 600V | 5.4A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | Super Junction | - | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
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|
IXYS |
MOSFET N-CH 55V 100A I4-PAC-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
|
Package: i4-Pac?-5 |
Stock3,920 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 1mA | 100nC @ 10V | - | ±20V | - | - | 7.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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|
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock86,304 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 3.1W (Ta), 74W (Tc) | 400 mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET P-CH 200V 106A SOT-227
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 106A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock5,696 |
|
MOSFET (Metal Oxide) | 200V | 106A | 10V | 4.5V @ 250µA | 740nC @ 10V | 73000pF @ 25V | ±15V | - | 830W (Tc) | 30 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
STMicroelectronics |
MOSFET N-CH 600V 26A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,568 |
|
MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 4V @ 250µA | 45.5nC @ 10V | 1781pF @ 100V | ±25V | - | 190W (Tc) | 125 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 1.4A SSOT-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 344pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 425 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock158,280 |
|
MOSFET (Metal Oxide) | 150V | 1.4A (Ta) | 6V, 10V | 4V @ 250µA | 11nC @ 10V | 344pF @ 75V | ±20V | - | 1.6W (Ta) | 425 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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|
STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock20,316 |
|
MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 5V @ 250µA | 64nC @ 10V | 2880pF @ 100V | ±25V | - | 140W (Tc) | 139 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock9,444 |
|
MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | ±20V | - | 5.2W (Ta), 83W (Tc) | 41 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 8.8A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock18,096 |
|
MOSFET (Metal Oxide) | 80V | 8.8A (Ta), 22A (Tc) | 6V, 10V | 4V @ 250µA | 40nC @ 10V | 2490pF @ 40V | ±20V | - | 2.5W (Ta), 78W (Tc) | 16.5 mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerWDFN |
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EPC |
TRANS GAN 100V 6A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (5-Solder Bar)
- Package / Case: Die
|
Package: Die |
Stock129,366 |
|
GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | +6V, -4V | - | - | 30 mOhm @ 6A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
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Diodes Incorporated |
MOSFET N-CH 20V 5.47A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 434.7pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,303,640 |
|
MOSFET (Metal Oxide) | 20V | 5.47A (Ta) | 1.8V, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | 434.7pF @ 10V | ±12V | - | 740mW (Ta) | 29 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
STMicroelectronics |
MOSFET N-CH 1200V 12A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,952 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | ±30V | - | 250W (Tc) | 690 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
Rohm Semiconductor |
650V 30A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock2,652 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 5V @ 960µA | 56 nC @ 10 V | 2350 pF @ 25 V | ±20V | - | 86W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
IceMOS Technology |
Superjunction MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 730 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2816 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 730 V | 15A (Tc) | 10V | 3.5V @ 250µA | 75 nC @ 10 V | 2816 pF @ 100 V | ±20V | - | 208W (Tc) | 350mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Micro Commercial Co |
MOSFET N-CH ENH FET 200VDS 30VGS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 65.8W
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 3V @ 250µA | 17.7 nC @ 10 V | 836 pF @ 25 V | ±30V | - | 65.8W | 160mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 1
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
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Package: - |
Stock360 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 21mOhm @ 50A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Goford Semiconductor |
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6L
- Package / Case: SOT-23-6
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Package: - |
Stock8,490 |
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MOSFET (Metal Oxide) | 30 V | 5.3A (Tc) | 2.5V, 10V | 1.3V @ 250µA | 9.1 nC @ 4.5 V | 573 pF @ 15 V | ±10V | - | 1.4W (Tc) | 25mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 870mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | 42 pF @ 16 V | ±6V | - | 320mW (Ta) | 450mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Harris Corporation |
14A, 100V, 0.16OHM, N-CHANNEL PO
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH 20V 3.9A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Package: - |
Stock16,590 |
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MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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NTE Electronics, Inc |
MOSFET-DUAL GATE N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 60mA
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.2W
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72
- Package / Case: TO-72-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 60mA | - | - | - | 3300 pF @ 15 V | - | - | 1.2W | - | -65°C ~ 175°C (TJ) | Through Hole | TO-72 | TO-72-3 |
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onsemi |
MOSFET N-CH 80V 30A/224A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock3,702 |
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MOSFET (Metal Oxide) | 80 V | 30A (Ta), 224A (Tc) | 4.5V, 10V | 2V @ 330µA | 112 nC @ 10 V | 6900 pF @ 40 V | ±20V | - | 3.9W (Ta), 214W (Tc) | 1.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |