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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 460µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock5,856 |
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MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 2V @ 460µA | 20nC @ 10V | 460pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 20V 2A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
- Vgs (Max): ±9V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 104 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock39,000 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.2V, 4.5V | - | 2.9nC @ 4.5V | 175pF @ 10V | ±9V | - | 800mW (Ta) | 104 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220NIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220NIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock3,392 |
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MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | ±30V | - | 40W (Tc) | 620 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 900V 11.4A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock391,740 |
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MOSFET (Metal Oxide) | 900V | 11.4A (Tc) | 10V | 5V @ 250µA | 94nC @ 10V | 3500pF @ 25V | ±30V | - | 300W (Tc) | 960 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 55A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,480 |
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MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1690pF @ 25V | ±25V | - | 133W (Tc) | 20 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 500V 32A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock423,384 |
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MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 4V @ 4mA | 300nC @ 10V | 5700pF @ 25V | ±20V | - | 360W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 5A 8-MSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MSOP
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock28,776 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 950pF @ 25V | ±20V | - | 1.1W (Ta) | 45 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 195A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,616 |
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MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | ±20V | - | 375W (Tc) | 2.6 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 100V 70A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,376 |
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MOSFET (Metal Oxide) | 100V | 70A (Ta) | 10V | - | 94nC @ 10V | 6450pF @ 10V | ±20V | - | 150W (Tc) | 7.6 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 40V 120A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock438,240 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 3240pF @ 25V | ±20V | - | 200W (Tc) | 6.1 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 30.4A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4235pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.9W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,144 |
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MOSFET (Metal Oxide) | 30V | 30.4A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 33nC @ 4.5V | 4235pF @ 12V | ±20V | - | 6.9W (Tc) | 4.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Panasonic Electronic Components |
MOSFET N CH 33V 12A WMINI8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 33V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1.73mA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WMini8-F1
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock4,608 |
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MOSFET (Metal Oxide) | 33V | 12A (Ta) | 4.5V, 10V | 2.5V @ 1.73mA | 10.2nC @ 4.5V | 1100pF @ 10V | ±20V | - | 1W (Ta) | 7 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | WMini8-F1 | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 100V 1.5A SOT23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock1,440,000 |
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MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 6V, 10V | 4V @ 250µA | 7.7nC @ 10V | 405pF @ 50V | ±20V | - | 1.1W (Ta) | 250 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 24V 60A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3940pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock915,732 |
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MOSFET (Metal Oxide) | 24V | 60A (Tc) | 5V, 10V | 1.8V @ 250µA | 84nC @ 10V | 3940pF @ 15V | ±20V | - | 100W (Tc) | 4.8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 15A 8-HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 22.9W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock5,296 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | ±20V | - | 3W (Ta), 22.9W (Tc) | 8.8 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,256 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5.5V @ 1mA | 32nC @ 10V | 1610pF @ 25V | ±30V | - | 200W (Tc) | 740 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock19,548 |
|
MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 625mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock34,476 |
|
MOSFET (Metal Oxide) | 100V | 5A (Ta) | 6V, 10V | 4V @ 250µA | 30nC @ 10V | - | ±20V | - | 1.9W (Ta) | 34 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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|
STMicroelectronics |
MOSFET N-CH 600V 36A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 53.5 nC @ 10 V | 2340 pF @ 100 V | ±25V | - | 42W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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onsemi |
MOSFET P-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 159µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
- Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TTFN-9-U02
- Package / Case: 9-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 14.1A (Ta), 148A (Tc) | 0V, 10V | 4.6V @ 159µA | 60 nC @ 10 V | 4700 pF @ 75 V | ±20V | - | 2.5W (Ta), 278W (Tc) | 6.32mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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onsemi |
MOSFET N-CH 80V 11A/42A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock1,335 |
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MOSFET (Metal Oxide) | 80 V | 11A (Ta), 42A (Tc) | 4.5V, 10V | 2V @ 45µA | 17 nC @ 10 V | 906 pF @ 40 V | ±20V | - | 3.6W (Ta), 54W (Tc) | 13.1mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
PLANAR 40<-<100V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Stock600 |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 3.5V @ 790µA | 52 nC @ 10 V | 2000 pF @ 100 V | ±20V | - | 192W (Tc) | 165mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Diodes Incorporated |
MOSFET P-CH 40V 8A/22A PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 8A (Ta), 22A (Tc) | 4.5V, 10V | 3V @ 250µA | 34 nC @ 10 V | 1626 pF @ 20 V | ±20V | - | 1.2W (Ta) | 29mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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onsemi |
SF3 FRFET AUTO, 95MOHM, D2PAK 7L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 860µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 272W (Tc)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,364 |
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MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 5V @ 860µA | 66 nC @ 10 V | 3020 pF @ 400 V | ±30V | - | 272W (Tc) | 95mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Panjit International Inc. |
SOT-323, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Stock132,006 |
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MOSFET (Metal Oxide) | 50 V | 360mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 1 nC @ 4.5 V | 50 pF @ 25 V | ±20V | - | 236mW (Ta) | 1.6Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |