Page 257 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB160N04S2L03ATMA2
Infineon Technologies

MOSFET N-CH TO262-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,632
IRL1004STRR
Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
AOD206_030
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,256
JAN2N7224
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock2,800
SI1012X-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 500MA SC89-3

Package: SC-89, SOT-490

Stock930,588
FQPF6N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 5A TO-220F

Package: TO-220-3 Full Pack

Stock3,840
IPI50R250CPXKSA1
Infineon Technologies

MOSFET N-CH 500V 13A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock10,776
BSP125H6327XTSA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

Package: TO-261-4, TO-261AA

Stock12,240
RS1E320GNTB
Rohm Semiconductor

MOSFET N-CH 30V 32A 8-HSOP

Package: 8-PowerTDFN

Stock6,272
BSC882N03LSGATMA1
Infineon Technologies

MOSFET N-CH TDSON-8

Package: -

Stock47,214
EPC2018
EPC

TRANS GAN 150V 12A BUMPED DIE

Package: Die

Stock52,842
BSS7728NH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 200MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock93,330
BS170
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock563,184
FDD18N20LZ
Fairchild/ON Semiconductor

MOSFET N-CH 200V DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,492
SIR464DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock127,824
CSD16322Q5C
Texas Instruments

MOSFET N-CH 25V 97A 8SON

Package: 8-PowerTDFN

Stock24,684
SQD40020E_GE3
Vishay Siliconix

MOSFET N-CH 40V 100A TO252AA

Package: -

Request a Quote
IXFT150N25X3HV
IXYS

MOSFET N-CH 250V 150A TO268HV

Package: -

Request a Quote
64-4073PBF
Infineon Technologies

IC MOSFET

Package: -

Request a Quote
AIMBG120R040M1XTMA1
Infineon Technologies

SIC_DISCRETE

Package: -

Stock1,389

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB160N04S2L03ATMA2	Infineon Technologies	MOSFET N-CH TO262-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,632	MOSFET (Metal Oxide)	40V	160A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 5V	6000pF @ 15V	±20V	-	300W (Tc)	2.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
IRL1004STRR	Infineon Technologies	MOSFET N-CH 40V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	MOSFET (Metal Oxide)	40V	130A (Tc)	4.5V, 10V	1V @ 250µA	100nC @ 4.5V	5330pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6.5 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOD206_030	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	30V	18A (Ta), 46A (Tc)	4.5V, 10V	2.4V @ 250µA	33nC @ 10V	1333pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
JAN2N7224	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock2,800	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
SI1012X-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 500MA SC89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock930,588	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4.5V	900mV @ 250µA	0.75nC @ 4.5V	-	±6V	-	250mW (Ta)	700 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
FQPF6N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,840	MOSFET (Metal Oxide)	150V	5A (Tc)	10V	4V @ 250µA	8.5nC @ 10V	270pF @ 25V	±25V	-	38W (Tc)	600 mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPI50R250CPXKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock10,776	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	3.5V @ 520µA	36nC @ 10V	1420pF @ 100V	±20V	-	114W (Tc)	250 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
BSP125H6327XTSA1	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock12,240	MOSFET (Metal Oxide)	600V	120mA (Ta)	4.5V, 10V	2.3V @ 94µA	6.6nC @ 10V	150pF @ 25V	±20V	-	1.8W (Ta)	45 Ohm @ 120mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
RS1E320GNTB	Rohm Semiconductor	MOSFET N-CH 30V 32A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 34.6W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 32A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,272	MOSFET (Metal Oxide)	30V	32A (Ta)	4.5V, 10V	2.5V @ 1mA	42.8nC @ 10V	2850pF @ 15V	±20V	-	3W (Ta), 34.6W (Tc)	1.9 mOhm @ 32A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
BSC882N03LSGATMA1	Infineon Technologies	MOSFET N-CH TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock47,214	MOSFET (Metal Oxide)	34V	100A	10V	2.2V @ 250µA	46nC @ 10V	3700pF @ 15V	±20V	-	69W (Tc)	4.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	-	-
EPC2018	EPC	TRANS GAN 150V 12A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock52,842	GaNFET (Gallium Nitride)	150V	12A (Ta)	5V	2.5V @ 3mA	7.5nC @ 5V	540pF @ 100V	+6V, -5V	-	-	25 mOhm @ 6A, 5V	-40°C ~ 125°C (TJ)	Surface Mount	Die	Die
BSS7728NH6327XTSA1	Infineon Technologies	MOSFET N-CH 60V 200MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock93,330	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	2.3V @ 26µA	1.5nC @ 10V	56pF @ 25V	±20V	-	360mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
BS170	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock563,184	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDD18N20LZ	Fairchild/ON Semiconductor	MOSFET N-CH 200V DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,492	MOSFET (Metal Oxide)	200V	16A (Tc)	5V, 10V	2.5V @ 250µA	40nC @ 10V	1575pF @ 25V	±20V	-	89W (Tc)	125 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR464DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock127,824	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	95nC @ 10V	3545pF @ 15V	±20V	-	5.2W (Ta), 69W (Tc)	3.1 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
CSD16322Q5C	Texas Instruments	MOSFET N-CH 25V 97A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1365pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SON Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock24,684	MOSFET (Metal Oxide)	25V	21A (Ta), 97A (Tc)	3V, 8V	1.4V @ 250µA	9.7nC @ 4.5V	1365pF @ 12.5V	+10V, -8V	-	3.1W (Ta)	5 mOhm @ 20A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-SON	8-PowerTDFN
SQD40020E_GE3	Vishay Siliconix	MOSFET N-CH 40V 100A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	3.5V @ 250µA	130 nC @ 10 V	8000 pF @ 25 V	±20V	-	107W (Tc)	2.33mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFT150N25X3HV	IXYS	MOSFET N-CH 250V 150A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	4.5V @ 4mA	154 nC @ 10 V	10400 pF @ 25 V	±20V	-	780W (Tc)	9mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
64-4073PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG120R040M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock1,389	SiCFET (Silicon Carbide)	1200 V	48A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AOE66410	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 147W Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A	4.5V, 10V	2.5V @ 250µA	165 nC @ 4.5 V	9000 pF @ 20 V	±20V	-	147W	1mOhm @ 20A, 10V	-55°C ~ 150°C	Surface Mount	8-DFN-EP (5x6)	8-PowerVDFN
RJK60S4DPP-E0-T2	Renesas Electronics Corporation	MOSFET N-CH 600V 16A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 29.9W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	16A (Tc)	-	-	18 nC @ 10 V	988 pF @ 25 V	-	-	29.9W (Tc)	290mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SIR4602LDP-T1-RE3	Vishay Siliconix	POWERPAK SO-8, 8.8 M @ 10V, 12.5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	15.2A (Ta), 52.1A (Tc)	4.5V, 10V	2.5V @ 250µA	29 nC @ 10 V	1185 pF @ 30 V	±20V	-	3.6W (Ta), 43W (Tc)	8.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
C3M0075120D-A	Wolfspeed, Inc.	75M 1200V 175C SIC FET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,233	SiCFET (Silicon Carbide)	1200 V	32A (Tc)	15V	3.6V @ 5mA	54 nC @ 15 V	1390 pF @ 1000 V	+15V, -4V	-	136W (Tc)	90mOhm @ 20A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STD1028T4	onsemi	NFET DPAK SPCL 60V TR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2053U-7	Diodes Incorporated	MOSFET N-CH 20V 6.5A SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock6,630	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	1.8V, 10V	1.2V @ 250µA	4.6 nC @ 4.5 V	414 pF @ 10 V	±12V	-	800mW (Ta)	29mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PJD16P04-AU_L2_000A1	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 929 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,043	MOSFET (Metal Oxide)	40 V	5A (Ta), 16A (Tc)	4.5V, 10V	2.5V @ 250µA	8.3 nC @ 4.5 V	929 pF @ 15 V	±20V	-	2W (Ta), 22W (Tc)	45mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFK98N60X3	IXYS	DISCRETE MOSFET 98A 600V X3 TO26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock975	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-