Page 340 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3103STRRPBF
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,000
IRLR9343-701PBF
Infineon Technologies

MOSFET P-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,216
AOD4185_003
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V TO252

Package: -

Stock3,600
FDB088N08_F141
Fairchild/ON Semiconductor

MOSFET N-CH 75V 2PAK-3

Package: -

Stock3,616
JANTX2N6802U
Microsemi Corporation

MOSFET N-CH

Package: 18-BQFN Exposed Pad

Stock2,512
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.173", 4.40mm Width)

Stock7,840
FDMC8676
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A POWER33

Package: 8-PowerTDFN

Stock81,120
SI3441BDV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.45A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,067,736
FQB3N90TM
Fairchild/ON Semiconductor

MOSFET N-CH 900V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,968
IRF740ASTRR
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,248
SPA12N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 11.6A TO220FP

Package: TO-220-3 Full Pack

Stock5,760
AOB15S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,520
AOTF2610L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 35A TO220F

Package: TO-220-3 Full Pack

Stock4,144
NVTFS5C673NLWFTAG
ON Semiconductor

MOSFET N-CH 60V U8FL

Package: 8-PowerWDFN

Stock3,312
NVMFS5C682NLT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock2,544
MCH6321-TL-W
ON Semiconductor

MOSFET P-CH 20V 4A MCPH6

Package: 6-SMD, Flat Leads

Stock4,464
FDD8444L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,000
IXTP140N12T2
IXYS

120V/140A TRENCHT2 POWER MOSFET

Package: TO-220-3

Stock4,848
STP9N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A TO-220

Package: TO-220-3

Stock6,160
IRFHM9331TRPBF
Infineon Technologies

MOSFET P-CH 30V 11A 8-PQFN

Package: 8-PowerTDFN

Stock672,480

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3103STRRPBF	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,000	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	94W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR9343-701PBF	Infineon Technologies	MOSFET P-CH 55V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,216	MOSFET (Metal Oxide)	55V	20A (Tc)	4.5V, 10V	1V @ 250µA	47nC @ 10V	660pF @ 50V	±20V	-	79W (Tc)	105 mOhm @ 3.4A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOD4185_003	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,600	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB088N08_F141	Fairchild/ON Semiconductor	MOSFET N-CH 75V 2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,616	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
JANTX2N6802U	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock2,512	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	33nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
TPC8026(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock7,840	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	42nC @ 10V	1800pF @ 10V	±20V	-	1W (Ta)	6.6 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-SOP (5.5x6.0)	8-SOIC (0.173", 4.40mm Width)
FDMC8676	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 14.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock81,120	MOSFET (Metal Oxide)	30V	16A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	1935pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	5.9 mOhm @ 14.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
SI3441BDV-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 2.45A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,067,736	MOSFET (Metal Oxide)	20V	2.45A (Ta)	2.5V, 4.5V	850mV @ 250µA	8nC @ 4.5V	-	±8V	-	860mW (Ta)	90 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
FQB3N90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	5V @ 250µA	26nC @ 10V	910pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	4.25 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF740ASTRR	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,248	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	36nC @ 10V	1030pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPA12N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 11.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,760	MOSFET (Metal Oxide)	560V	11.6A (Tc)	10V	3.9V @ 500µA	49nC @ 10V	1200pF @ 25V	±20V	-	33W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AOB15S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,520	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.8V @ 250µA	15.6nC @ 10V	717pF @ 100V	±30V	-	208W (Tc)	290 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOTF2610L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 35A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2007pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,144	MOSFET (Metal Oxide)	60V	9A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	30nC @ 10V	2007pF @ 30V	±20V	-	2.1W (Ta), 31W (Tc)	10.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NVTFS5C673NLWFTAG	ON Semiconductor	MOSFET N-CH 60V U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,312	MOSFET (Metal Oxide)	60V	13A (Ta), 50A (Tc)	4.5V, 10V	2V @ 250µA	9.5nC @ 10V	880pF @ 25V	±20V	-	3.1W (Ta), 46W (Tc)	9.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS5C682NLT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,544	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 16µA	5nC @ 10V	410pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
MCH6321-TL-W	ON Semiconductor	MOSFET P-CH 20V 4A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 83 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock4,464	MOSFET (Metal Oxide)	20V	4A (Ta)	1.8V, 4.5V	-	4.6nC @ 4.5V	375pF @ 10V	±10V	-	1.5W (Ta)	83 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
FDD8444L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 153W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	40V	16A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 5V	5530pF @ 25V	±20V	-	153W (Tc)	5.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP140N12T2	IXYS	120V/140A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 577W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,848	MOSFET (Metal Oxide)	120V	140A (Tc)	10V	4.5V @ 250µA	174nC @ 10V	9700pF @ 25V	±20V	-	577W (Tc)	10 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP9N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,160	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	10nC @ 10V	320pF @ 100V	±25V	-	60W (Tc)	780 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFHM9331TRPBF	Infineon Technologies	MOSFET P-CH 30V 11A 8-PQFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1543pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock672,480	MOSFET (Metal Oxide)	30V	11A (Ta), 24A (Tc)	10V, 20V	2.4V @ 25µA	48nC @ 10V	1543pF @ 25V	±25V	-	2.8W (Ta)	10 mOhm @ 11A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (3x3)	8-PowerTDFN
IRF830PBF	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock143,472	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	-	74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TN0606N3-G	Microchip Technology	MOSFET N-CH 60V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock13,488	MOSFET (Metal Oxide)	60V	500mA (Tj)	3V, 10V	2V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MTD1312T4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2702TP-E1-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQS415ENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 16A PPAK1212-8W FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock31,335	MOSFET (Metal Oxide)	40 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	82 nC @ 10 V	4825 pF @ 25 V	±20V	-	62.5W (Tc)	16.1mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
NTMFS4C906NBT1G	onsemi	TRENCH 6 30V NCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3457	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 4.3A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.3A (Ta)	4.5V, 10V	2.4V @ 250µA	20 nC @ 10 V	520 pF @ 15 V	±20V	-	1.4W (Ta)	48mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
MSC060SMA070S	Microchip Technology	SICFET N-CH 700V 37A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock141	SiCFET (Silicon Carbide)	700 V	37A (Tc)	20V	2.4V @ 1mA (Typ)	56 nC @ 20 V	1175 pF @ 700 V	+23V, -10V	-	130W (Tc)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA