Page 379 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR8405
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,728
BSP135L6906HTSA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

Package: TO-261-4, TO-261AA

Stock3,376
JANTXV2N7224U
Microsemi Corporation

MOSFET N-CH 100V 34A

Package: TO-267AB

Stock2,000
SI4438DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,440
FDD6N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,128
IRF6724MTRPBF
Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

Package: DirectFET? Isometric MX

Stock7,104
IRF740ASTRRPBF
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,864
TSM120N06LCS RLG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,568
BUK7880-55/CUF
Nexperia USA Inc.

MOSFET N-CH 55V 7.5A SOT223

Package: TO-261-4, TO-261AA

Stock5,024
STFI260N6F6
STMicroelectronics

MOSFET N-CH 60V 80A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock6,552
STP100NF04
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock407,376
FDD6N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock19,200
FQD8P10TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock210,180
BSC520N15NS3GATMA1
Infineon Technologies

MOSFET N-CH 150V 21A TDSON-8

Package: 8-PowerTDFN

Stock244,008
FDS6298
Fairchild/ON Semiconductor

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,012,056
GSFD0646
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 45A, 60V,T

Package: -

Stock15,000
SIR5102DP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

Package: -

Stock17,349
2SK4080-ZK-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 30V 48A TO252

Package: -

Request a Quote
SCT3017ALGC11
Rohm Semiconductor

650V, 118A, THD, TRENCH-STRUCTUR

Package: -

Stock1,323
IRF840LCPBF-BE3
Vishay Siliconix

MOSFET N-CHANNEL 500V

Package: -

Stock2,991

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR8405	Infineon Technologies	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5171pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 1.98 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,728	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	3.9V @ 100µA	155nC @ 10V	5171pF @ 25V	±20V	-	163W (Tc)	1.98 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP135L6906HTSA1	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,376	MOSFET (Metal Oxide)	600V	120mA (Ta)	0V, 10V	1V @ 94µA	4.9nC @ 5V	146pF @ 25V	±20V	Depletion Mode	1.8W (Ta)	45 Ohm @ 120mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
JANTXV2N7224U	Microsemi Corporation	MOSFET N-CH 100V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock2,000	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
SI4438DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4645pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,440	MOSFET (Metal Oxide)	30V	36A (Tc)	4.5V, 10V	2.6V @ 250µA	126nC @ 10V	4645pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD6N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.5A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,128	MOSFET (Metal Oxide)	200V	4.5A (Tc)	10V	5V @ 250µA	6.1nC @ 10V	230pF @ 25V	±30V	-	40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6724MTRPBF	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock7,104	MOSFET (Metal Oxide)	30V	27A (Ta), 150A (Tc)	4.5V, 10V	2.35V @ 100µA	54nC @ 4.5V	4404pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.5 mOhm @ 27A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF740ASTRRPBF	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,864	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	36nC @ 10V	1030pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM120N06LCS RLG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.5W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,568	MOSFET (Metal Oxide)	60V	23A (Tc)	4.5V, 10V	2.5V @ 250µA	37nC @ 10V	2193pF @ 30V	±20V	-	12.5W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BUK7880-55/CUF	Nexperia USA Inc.	MOSFET N-CH 55V 7.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,024	MOSFET (Metal Oxide)	55V	3.5A (Ta)	10V	4V @ 1mA	-	500pF @ 25V	±16V	-	8.3W (Tc)	80 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STFI260N6F6	STMicroelectronics	MOSFET N-CH 60V 80A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,552	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	183nC @ 10V	11400pF @ 25V	±20V	-	41.7W (Tc)	3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STP100NF04	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock407,376	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	150nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	4.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDD6N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock19,200	MOSFET (Metal Oxide)	200V	4.5A (Tc)	10V	5V @ 250µA	6.1nC @ 10V	230pF @ 25V	±30V	-	40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD8P10TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock210,180	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC520N15NS3GATMA1	Infineon Technologies	MOSFET N-CH 150V 21A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock244,008	MOSFET (Metal Oxide)	150V	21A (Tc)	8V, 10V	4V @ 35µA	12nC @ 10V	890pF @ 75V	±20V	-	57W (Tc)	52 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
FDS6298	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,012,056	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 5V	1108pF @ 15V	±20V	-	3W (Ta)	9 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
GSFD0646	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 45A, 60V,T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock15,000	MOSFET (Metal Oxide)	60 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	59 nC @ 10 V	3050 pF @ 25 V	±20V	-	63W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR5102DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,349	MOSFET (Metal Oxide)	100 V	27A (Ta), 110A (Tc)	7.5V, 10V	4V @ 250µA	51 nC @ 10 V	2850 pF @ 50 V	±20V	-	6.25W (Ta), 104W (Tc)	4.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
2SK4080-ZK-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 30V 48A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 24A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3Z) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	48A (Tc)	-	2.5V @ 1mA	32 nC @ 12 V	1670 pF @ 10 V	-	-	1W (Ta), 29W (Tc)	9mOhm @ 24A, 10V	150°C (TJ)	Surface Mount	TO-252 (MP-3Z)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3017ALGC11	Rohm Semiconductor	650V, 118A, THD, TRENCH-STRUCTUR FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 118A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock1,323	SiCFET (Silicon Carbide)	650 V	118A (Tc)	18V	5.6V @ 23.5mA	172 nC @ 18 V	2884 pF @ 500 V	+22V, -4V	-	427W	22.1mOhm @ 47A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IRF840LCPBF-BE3	Vishay Siliconix	MOSFET N-CHANNEL 500V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,991	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	4V @ 250µA	39 nC @ 10 V	1100 pF @ 25 V	±30V	-	125W (Tc)	850mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUZ21	Harris Corporation	MOSFET N-CH 100V 21A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85mOhm @ 13A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	21A (Tc)	-	4V @ 1mA	-	1300 pF @ 25 V	-	-	-	85mOhm @ 13A, 10V	-	Through Hole	TO-220AB	TO-220-3
SIR500DP-T1-RE3	Vishay Siliconix	N-CHANNEL 30 V (D-S) 150C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock23,766	MOSFET (Metal Oxide)	30 V	85.9A (Ta), 350.8A (Tc)	4.5V, 10V	2.2V @ 250µA	180 nC @ 10 V	8960 pF @ 15 V	+16V, -12V	-	6.25W (Ta), 104.1W (Tc)	0.47mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSZ0902NSATMA1	Infineon Technologies	MOSFET N-CH 30V 19A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Stock298,989	MOSFET (Metal Oxide)	30 V	19A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	26 nC @ 10 V	1700 pF @ 15 V	±20V	-	2.1W (Ta), 48W (Tc)	2.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
6HP04MH-TL-E	onsemi	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTD4855NT4H	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD3P01BATTL1	Rohm Semiconductor	PCH -100V -10A POWER MOSFET: RD3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,257	MOSFET (Metal Oxide)	100 V	10A (Ta)	6V, 10V	4V @ 1mA	19.4 nC @ 10 V	660 pF @ 50 V	±20V	-	25W (Ta)	240mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ1E050RPFRATR	Rohm Semiconductor	PCH -30V -5A SMALL SIGNAL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Ta)	4V, 10V	2.5V @ 1mA	28 nC @ 10 V	1300 pF @ 10 V	±20V	-	1.1W (Ta)	31mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
SQ4483EY-T1_BE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 30A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock5,706	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	113 nC @ 10 V	4500 pF @ 15 V	±20V	-	7W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)