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Infineon Technologies |
MOSFET N-CH 200V 31A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,984 |
|
MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | ±30V | - | 3.1W (Ta), 200W (Tc) | 82 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 178A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock94,800 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta), 178A (Tc) | 10V | 3.7V @ 250µA | 102nC @ 10V | 4500pF @ 25V | ±20V | - | 2.1W (Ta), 417W (Tc) | 6.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 21A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,144 |
|
MOSFET (Metal Oxide) | 60V | 21A (Tc) | 5V, 10V | 2.5V @ 250µA | 13nC @ 5V | 630pF @ 25V | ±20V | - | 3.75W (Ta), 53W (Tc) | 55 mOhm @ 10.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,776 |
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MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 2V @ 1mA | 1.3nC @ 5V | 73pF @ 25V | ±20V | - | 360mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 9.8A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock15,444 |
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MOSFET (Metal Oxide) | 200V | 9.8A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 40W (Tc) | 180 mOhm @ 5.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 4.6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,396 |
|
MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 420pF @ 50V | ±25V | - | 45W (Tc) | 920 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,544 |
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MOSFET (Metal Oxide) | 60V | 8.8A (Ta) | 10V | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | ±20V | - | 42W (Tc) | 300 mOhm @ 6.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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TT Electronics/Optek Technology |
MOSFET N-CH 60V 200MA SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-SMD
- Package / Case: 3-SMD, No Lead
|
Package: 3-SMD, No Lead |
Stock6,080 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 25V | ±40V | - | 300mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD | 3-SMD, No Lead |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 20V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,312 |
|
MOSFET (Metal Oxide) | 40V | 150A (Tc) | 10V | 3V @ 250µA | 48nC @ 10V | 2846pF @ 20V | 20V | - | 165W (Tc) | 4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,080 |
|
MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 300 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 30V 4A SC96
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
|
Package: SC-96 |
Stock72,360 |
|
MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4.3nC @ 4.5V | 480pF @ 15V | ±12V | - | 1W (Ta) | 37 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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|
Rohm Semiconductor |
NCH 600V 24A POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock11,664 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | ±20V | - | 74W (Tc) | 165 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 17A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock14,868 |
|
MOSFET (Metal Oxide) | 25V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1625pF @ 13V | ±20V | - | 2.5W (Ta), 33W (Tc) | 5.8 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET P-CH 60V 11.4A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock90,984 |
|
MOSFET (Metal Oxide) | 60V | 11.4A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | ±25V | - | 53W (Tc) | 175 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 32.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock66,498 |
|
MOSFET (Metal Oxide) | 55V | 32.3A (Tc) | 10V | 4V @ 1mA | - | 872pF @ 25V | ±20V | - | 77W (Tc) | 37 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Nexperia USA Inc. |
MOSFET N-CH 55V 7A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock207,024 |
|
MOSFET (Metal Oxide) | 55V | 7A (Tc) | 10V | 4V @ 1mA | 12nC @ 10V | 500pF @ 25V | ±20V | - | 8W (Tc) | 80 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Nexperia USA Inc. |
MOSFET N-CH 60V TO-236AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock300,594 |
|
MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 1.6V @ 250µA | 0.7nC @ 4.5V | 56pF @ 10V | ±20V | - | 350mW (Ta), 1.14W (Tc) | 1.6 Ohm @ 350mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 600V 51A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: - |
Stock1,482 |
|
MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 5V @ 250µA | 130 nC @ 10 V | 3459 pF @ 100 V | ±30V | - | 278W (Tc) | 50mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 82A/100A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
|
Package: - |
Stock35,529 |
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MOSFET (Metal Oxide) | 30 V | 82A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 188 nC @ 10 V | 9530 pF @ 15 V | +20V, -16V | - | 6.25W (Ta), 125W (Tc) | 0.62mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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MOSLEADER |
Single P -20V -3.6A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 143A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 81µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,718 |
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MOSFET (Metal Oxide) | 40 V | 27A (Ta), 143A (Tc) | 6V, 10V | 3.4V @ 81µA | 102 nC @ 10 V | 4800 pF @ 20 V | ±20V | - | 3W (Ta), 150W (Tc) | 2.3mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 45A 5LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 45A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 27 nC @ 4.5 V | 4400 pF @ 10 V | ±20V | - | 25W (Tc) | 3.8mOhm @ 22.5A, 10V | 150°C | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock8,943 |
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MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 4V @ 250µA | 38 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 74W (Tc) | 1Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8DFN 5X6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 126W (Tc)
- Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
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SiCFET (Silicon Carbide) | 650 V | 28A (Tc) | 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | 624 pF @ 400 V | +23V, -5V | - | 126W (Tc) | 111mOhm @ 11.2A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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onsemi |
SICFET N-CH 1200V 58A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
- Vgs (Max): +25V, -15V
- FET Feature: -
- Power Dissipation (Max): 319W (Tc)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,350 |
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SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 4.3V @ 10mA | 106 nC @ 20 V | 1762 pF @ 800 V | +25V, -15V | - | 319W (Tc) | 56mOhm @ 35A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5244 pF @ 75 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 178W (Tj)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 80A (Tc) | 6V, 10V | 4V @ 250µA | 91 nC @ 10 V | 5244 pF @ 75 V | ±25V | - | 178W (Tj) | 11mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Infineon Technologies |
PLANAR 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 4V @ 250µA | 220 nC @ 10 V | 4220 pF @ 25 V | ±20V | - | 380W (Tc) | 40mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |